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Preparation method of semiconductor composite material based on chemical vapor deposition

A chemical vapor deposition and composite material technology, applied in the field of metal semiconductor materials, can solve the problems of low repetition rate, unstable product structure and performance, and achieve the effects of simple preparation, promotion of hydrogen production efficiency and oxygen production efficiency, and low price.

Inactive Publication Date: 2019-11-29
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the composite material for electrolytic catalysis prepared by this patent has good catalytic performance, it is prepared in liquid phase, the repetition rate is low, and the structure and performance of the product are often not stable enough.

Method used

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  • Preparation method of semiconductor composite material based on chemical vapor deposition
  • Preparation method of semiconductor composite material based on chemical vapor deposition
  • Preparation method of semiconductor composite material based on chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] (1) Preparation of iron-nickel alloy-molybdenum sulfide

[0042]Wash the iron-nickel foam alloy (as the substrate) and silicon oxide with ethanol, acetone, 0.5M hydrochloric acid and deionized water in sequence, place the molybdenum oxide powder on the silicon oxide, and put it into a quartz boat, and put the iron-nickel foam alloy sheet Put it on the top of the quartz boat (that is, above the molybdenum oxide powder), put it into the tube furnace; put the sulfur powder in another quartz boat, also put it into the tube furnace, and put the sulfur powder and molybdenum oxide in the tube furnace Different temperature control areas, the sulfur powder is in the temperature area of ​​the air flow inlet, and the molybdenum oxide is located in the middle area of ​​the tube furnace. Firstly, nitrogen is passed into the tube furnace, air is exhausted, and then the temperature of the molybdenum oxide area is increased to 650 degrees Celsius, and then the temperature of the sulfur...

Embodiment 2

[0048] (1) Preparation of iron-nickel alloy-molybdenum selenide

[0049] Preparation of iron-nickel alloy-molybdenum selenide: the same as in Example 1, but the sulfur powder needs to be replaced with selenium powder.

[0050] (2) Iron-nickel alloy-molybdenum selenide for electrolysis of water

[0051] The hydrogen generation and oxygen generation reactions of iron-nickel alloy-molybdenum selenide: the same as in Example 1, but the reaction efficiency is different.

Embodiment 3

[0053] (1) Preparation of cobalt-molybdenum sulfide

[0054] Preparation of cobalt-molybdenum sulfide: the same as in Example 1, but the base material needs to be replaced with elemental cobalt flakes.

[0055] (2) Cobalt-molybdenum sulfide for electrolysis of water

[0056] Cobalt-molybdenum sulfide hydrogen generation and oxygen generation reaction: the same as Example 1, but the reaction efficiency is different. see Image 6 As shown, it can be seen that the cobalt-molybdenum sulfide prepared in this example has better moisture desorption and oxygen performance than ordinary pure Co flakes.

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Abstract

The invention relates to a preparation method of a semiconductor composite material based on chemical vapor deposition. In a chemical vapor deposition reaction chamber, a semiconductor material is deposited on a substrate by a chemical vapor deposition method using a semiconductor synthetic raw material to obtain a target product with a coupling interface between the semiconductor material and thesubstrate. Compared with the prior art, the metal semiconductor composite material with the specific coupling interface is prepared by chemical vapor deposition, and the material has excellent conductivity and surface structure properties of a substrate metal material, and the electrocatalytic performance of the material is further improved due to the special coupling interface.

Description

technical field [0001] The invention belongs to the technical field of metal semiconductor materials, and relates to a method for preparing semiconductor composite materials based on chemical vapor deposition. Background technique [0002] The basic chemical reaction process of electrolysis of water plays a very important role in the fields of energy, catalyst, seawater desalination and so on. There are two main methods of industrialized hydrogen production by electrolysis: alkaline electrolysis of water to produce hydrogen, and polymer electrolyte electrolysis of water to produce hydrogen. Alkaline electrolysis of water to produce hydrogen is still in the development stage; the reason is that the direct use of seawater in the existing technology will lead to electrode corrosion and efficiency reduction, and higher voltage is required to realize hydrogen production. On the other hand, the price of high-efficiency electrode materials is relatively expensive. The requirements...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/057C25B1/04C25B11/06
CPCB01J27/0573C25B1/04C25B11/091B01J35/33Y02E60/36
Inventor 吴亿相倩李凡陈文龙马艳玲施枫磊邬剑波邓涛陶鹏宋成轶尚文
Owner SHANGHAI JIAO TONG UNIV
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