Unlock instant, AI-driven research and patent intelligence for your innovation.

Single nanoparticle light-scattering electrically regulated antenna and methods for its preparation and electrical regulation

A technology of nanoparticle and electrical control, applied in the direction of nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of changing the properties of optical waveguides, affecting optical signals, and large device area, achieving compact structure, large control range, Simple operation effect

Active Publication Date: 2020-06-26
JINAN UNIVERSITY
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional optoelectronic modulation is mainly based on the silicon-based microstructure preparation technology. Carrier injection is achieved by applying a gate voltage, which changes the properties of the optical waveguide, thus affecting the optical signal.
However, this method requires complex micro-nano processing, and the device area is large, making it difficult to achieve small-scale integration.
As for how to realize the electrical regulation of the optical response of a single nanoparticle, there is little research

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single nanoparticle light-scattering electrically regulated antenna and methods for its preparation and electrical regulation
  • Single nanoparticle light-scattering electrically regulated antenna and methods for its preparation and electrical regulation
  • Single nanoparticle light-scattering electrically regulated antenna and methods for its preparation and electrical regulation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Step S1: Select a lightly doped monocrystalline silicon wafer with a thickness of 0.5mm, cut the monocrystalline silicon wafer into a size specification of 1.5cm×1.5cm, place it in a rectangular quartz tank of 2cm×2cm×10cm, and cling to the right side of the quartz tank Place the polished side of the wall vertically outwards, and then inject deionized water into the quartz tank so that the deionized water does not cover the upper edge of the silicon wafer.

[0059] Step S2: Adjust the optical path of the femtosecond laser, first align the laser beam with the direction of the quartz trough through the total reflection mirror, and then select a focusing lens with a focal length of 10cm to focus the laser beam on the bullseye of the single crystal silicon wafer, and focus the laser beam to the target The diameter of the light spot on the surface of the material is 0.5cm, and the distance from the bullseye of the silicon wafer to the focal point is 2cm.

[0060] Step S3: Tu...

Embodiment 2

[0066] Step S1: Select a lightly doped monocrystalline silicon wafer with a thickness of 0.5mm, cut the monocrystalline silicon wafer into a size specification of 1.5cm×1.5cm, place it in a rectangular quartz tank of 2cm×2cm×10cm, and cling to the right side of the quartz tank Place the polished side of the wall vertically outwards, and then inject deionized water into the quartz tank so that the deionized water does not cover the upper edge of the silicon wafer.

[0067] Step S2: Adjust the optical path of the femtosecond laser, first align the laser beam with the direction of the quartz trough through the total reflection mirror, and then select a focusing lens with a focal length of 10cm to focus the laser beam on the bullseye of the single crystal silicon wafer, and focus the laser beam to the target The diameter of the light spot on the surface of the material is 0.5cm, and the distance from the bullseye of the silicon wafer to the focal point is 2cm.

[0068] Step S3: Tu...

Embodiment 3

[0074] Step S1: Select a lightly doped monocrystalline silicon wafer with a thickness of 0.5mm, cut the monocrystalline silicon wafer into a size specification of 1.5cm×1.5cm, place it in a rectangular quartz tank of 2cm×2cm×10cm, and cling to the right side of the quartz tank Place the polished side of the wall vertically outwards, and then inject deionized water into the quartz tank so that the deionized water does not cover the upper edge of the silicon wafer.

[0075] Step S2: Adjust the optical path of the femtosecond laser. First, align the laser beam in the direction of the quartz groove through the total reflection mirror, and then select a focusing lens with a focal length of about 10 cm to focus the laser beam on the bullseye of the single crystal silicon wafer. The diameter of the spot on the target surface is 0.5cm, and the silicon wafer bullseye is 2cm away from the focal point.

[0076] Step S3: Turn on the femtosecond laser, the pulse laser wavelength is 800nm, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
wavelengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a single nanoparticle light scattering electric control antenna and a preparation and electric control method. Si nanoparticles with different sizes are prepared by femtosecondliquid phase laser ablation monocrystalline silicon wafers. Then interdigital electrodes are prepared by combining maskless lithography and focused ion beam etching. Then the Si nanoparticles are mounted between the two interdigital electrodes through the self-assembly technology of the Si nanoparticles so as to form the electric control antenna. The voltage is applied to the two ends of the twointerdigital electrodes and then the change of light scattering of the single Si nanoparticle can be measured. The preparation method can easily and quickly prepare the Si nanoparticles and realize the self-assembly of the electric control antenna. The prepared Si nanoparticle electric control antenna has a nanometer scale, integrates a plurality of single Si nanoparticles and uses the Si nanoparticle electric control antenna to accurately control the light scattering of the single Si nanoparticle. The control method can cause obvious changes in optical response and the control range is higher.

Description

technical field [0001] The invention belongs to the technical field of electrical control of nanoscale scattering antennas, and relates to a single nano particle light scattering electrical control antenna and a method for preparing and electrical control. Background technique [0002] Electrically tunable nanophotonic devices can combine electrical and optical properties, bringing the possibility of dynamically tunable photonic devices. The traditional optoelectronic modulation is mainly based on silicon-based microstructure preparation technology. Carrier injection is achieved by applying a gate voltage, which changes the properties of the optical waveguide, thereby affecting the optical signal. However, this method requires complex micro-nano processing, and the device area is large, making it difficult to achieve small-scale integration. As for how to realize the electrical modulation of the optical response of individual nanoparticles, there is little research. We not...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01Q1/36G01J3/28C01B33/18C23C14/30C23C14/18B82Y30/00
CPCB82Y30/00C01B33/181C23C14/18C23C14/30G01J3/28H01Q1/36
Inventor 严佳豪李宝军杨国伟
Owner JINAN UNIVERSITY