Check patentability & draft patents in minutes with Patsnap Eureka AI!

Perovskite single crystal with light trapping structure and preparation method of perovskite single crystal

A light-trapping structure and perovskite technology, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of unpublished preparation of perovskite single crystals and the inability to form them at one time, and meet the equipment requirements Low, mild growth conditions, simple method and process

Active Publication Date: 2019-12-06
SHAANXI NORMAL UNIV
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the growth of perovskite single crystal is by solution method, the solution is very easy to change the surface morphology of the crystal twice, so the light trapping structure adopts the secondary chemical treatment method, which cannot be used in the growth of perovskite crystal. Time to take shape
The preparation of perovskite single crystals with perfect surface light-trapping structures has not yet been published

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Perovskite single crystal with light trapping structure and preparation method of perovskite single crystal
  • Perovskite single crystal with light trapping structure and preparation method of perovskite single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Step 1, cleaning the single crystal silicon with a pyramid structure with an average surface diameter of 1 μm: ultrasonic cleaning with acetone, isopropanol and ultrapure water for 15 minutes respectively.

[0041] Step 2, perform surface modification treatment on the template: place the single crystal silicon wafer in 3-aminopropyltrimethoxysilane diluted 10:1 with chlorobenzene, and activate treatment at 60° C. for 20 minutes.

[0042] Step 3, configure the precursor single crystal growth solution: weigh CH with a stoichiometric ratio of 1:1 3 NH 3 I and PbI 2 , dissolved in 20mL γ-butyrolactone to obtain 1.23mol / L clear and transparent CH 3 NH 3 PB 3 Precursor Growth Solution.

[0043] Step 4, growing a perovskite single crystal with a surface light-trapping structure: transfer the template and the configured precursor liquid to a closed container. The reaction container system is placed in a heated blast drying oven and the temperature is raised to 95°C. After...

Embodiment 2

[0046] Step 1, cleaning the single crystal silicon with a pyramid structure with an average surface diameter of 10 μm: ultrasonic cleaning with acetone, isopropanol and ultrapure water for 15 minutes respectively.

[0047] Step 2, perform surface modification treatment on the template: place the single crystal silicon wafer in 3-aminopropyltriethoxysilane diluted 10:1 with chlorobenzene, and activate treatment at 50° C. for 40 minutes.

[0048] Step 3, configure the precursor single crystal growth solution: weigh CH with a stoichiometric ratio of 1:1 3 NH 3 Br and PbBr 2 , dissolved in 20mL N,N dimethylformamide to obtain 1.5mol / L clear and transparent CH 3 NH 3 PbBr 3 Precursor Growth Solution.

[0049] Step 4, growing a perovskite single crystal with a surface light-trapping structure: transfer the template and the configured precursor liquid to a closed container. The reaction container system is placed in a heated blast drying oven and the temperature is raised to 50...

Embodiment 3

[0052] Step 1, cleaning the single crystal silicon with a pyramid structure with an average surface diameter of 5 μm: ultrasonic cleaning with acetone, isopropanol and ultrapure water for 15 minutes respectively.

[0053] Step 2, perform surface modification treatment on the template: place the monocrystalline silicon wafer in mercaptopropyltrimethoxysilane diluted 10:1 with chlorobenzene, and perform activation treatment at 70° C. for 40 minutes.

[0054] Step 3, configure the precursor single crystal growth solution: weigh CH with a stoichiometric ratio of 1:1 3 NH 3 Cl and PbCl 2 , dissolved in 20mL dimethyl sulfoxide to obtain 2.5mol / L clear and transparent CH 3 NH 3 PbCl 3 Precursor Growth Solution.

[0055] Step 4, growing a perovskite single crystal with a surface light-trapping structure: transfer the template and the configured precursor liquid to a closed container. The reaction container system is placed in a heated blast drying oven and the temperature is rai...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a perovskite single crystal with a light trapping structure and a preparation method of the perovskite single crystal. The perovskite single crystal with the light trapping structure is simple to operate, high in success rate, capable of growing in situ and high in quality of the light trapping structure. According to the preparation method, a template with a light trappingstructure on the surface is placed into an ABX3 perovskite precursor solution after the template is activated, the precursor solution is subjected to heterogeneous nucleation on the surface of the template with the light trapping structure, and then an ABX3 perovskite single crystal with the surface light trapping structure opposite to the light trapping structure on the surface of the template isgrown in situ, wherein A is CH3NH3+, H2N-CH= NH2+, (CH3) 4N+, C7H7+ and Cs+ or C3H11SN32+; B is Pb, Ge or Sn; and X is Cl, Br or I. By adopting a material with a stable light trapping structure as atemplate, perovskite growth liquid is subjected to heterogeneous nucleation on the template with a concave-convex surface structure, and then the perovskite single crystal with the surface light trapping structure opposite to the template structure is grown in situ.

Description

technical field [0001] The invention relates to the field of perovskite crystals, in particular to a perovskite single crystal with a light-trapping structure and a preparation method thereof. Background technique [0002] In recent years, perovskite solar cells have received great attention in the field of photovoltaic solar cells due to their low cost and rapidly increasing photoelectric conversion efficiency. At present, how to further improve the photoelectric conversion efficiency and stability of perovskite cells has become the most important research topic. At the same time, perovskite materials are also widely used in the research of photodetectors. However, perovskite solar cells are mostly based on polycrystalline thin films. As we all know, compared with polycrystalline thin films, single crystal materials have wider absorption range, lower defect state density, higher carrier mobility, and longer Runner life and better stability. Therefore, solar cells based ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B7/00C30B29/12
CPCC30B7/005C30B29/12
Inventor 刘生忠张云霞刘渝城
Owner SHAANXI NORMAL UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com