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A kind of co-doped diamond and its preparation method and semiconductor material and device

A diamond and co-doping technology, applied in metal material coating process, semiconductor/solid-state device manufacturing, polycrystalline material growth, etc., can solve problems such as the difficulty of manufacturing n-type conductive crystals

Active Publication Date: 2022-04-19
BEIJING ALMAS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] So far, the biggest obstacle to the commercialization of diamond semiconductors is that it is easy to manufacture p-type transistors, but it is difficult to manufacture n-type conductive crystals, especially the manufacture of diamond doped layers with high-quality n-type conductivity has become a barrier to the development of diamond semiconductors

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  • A kind of co-doped diamond and its preparation method and semiconductor material and device
  • A kind of co-doped diamond and its preparation method and semiconductor material and device
  • A kind of co-doped diamond and its preparation method and semiconductor material and device

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preparation example Construction

[0063] see figure 1 As shown, the preparation method of the embodiment of the present application specifically includes the following steps:

[0064] Step S1: Using single crystal diamond as a diamond substrate, the selected diamond substrate has a thickness (specification) less than 0.2 microns, and places the (100) crystal plane in the substrate holder in the hot wire reaction chamber with the (100) crystal plane facing upward.

[0065]The inventor found in the process of realizing the present application that diamond has the advantages of wide band gap, high mobility of electrons and holes, small dielectric constant and large breakdown electric field as a semiconductor material. High-quality diamond material is to ensure its critical for semiconductor applications. The characteristics of diamond in nature are unstable, and the current methods for preparing large-size single crystal diamond mainly include high temperature and high pressure (HPHT) and chemical vapor depositi...

Embodiment 1

[0094] This embodiment provides an n-type boron-sulfur co-doped diamond flake, which is prepared according to the following method:

[0095] A high temperature and high pressure synthetic diamond single wafer is selected, and after grinding and polishing, a (100) crystal phase can be produced, and then the substrate is ultrasonically cleaned with acetone, and then dried to obtain a substrate.

[0096]The HFCVD method was carried out according to the process parameters in Table 1. Specifically, the pretreated substrate was placed in a hot wire reactor, and the filament of the hot wire reactor was a rhenium wire with a thickness of about 10 mm. The air pressure of the reaction chamber is evacuated to a pressure less than 10 mTorr, and then filled with hydrogen gas with a purity of 99.999% at a pressure of 40 Torr, with a flow rate of 120 sccm.

[0097] Table 1 Process parameters of HFCVD method

[0098]

[0099] Heating the rhenium wire to 2100°C, when the substrate temperat...

Embodiment 2

[0105] This embodiment provides a p-type boron-doped diamond sheet, which is prepared according to the following method:

[0106] The single-crystal diamond sheet grown under high temperature and high pressure is ultrasonically cleaned with acetone and dried, and then used as a substrate for diamond epitaxial growth. Using the hot wire chemical vapor deposition method, using acetone dissolved in dimethyl borate as the carbon source, the acetone is brought into the reaction chamber by hydrogen bubbling. The concentration of boron in the acetone is 1060ppm, and the temperature of the reaction chamber is controlled at 600 ~700°C, the preparation time is 5 hours, and boron-doped diamond with a thickness of 3 μm is prepared, and the obtained boron-doped diamond is kept in air at a temperature of 500°C for 30 minutes, and boron with improved p-type conductivity is obtained Doped diamond, most carriers are holes, Hall coefficient 0.344m 2 / C, the carrier concentration is 2.58×10 15...

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Abstract

Embodiments of the present application provide a co-doped diamond, a preparation method, a semiconductor material, and a device, relating to the field of semiconductor materials. The lattice structure of the co-doped diamond includes a plurality of carbon atoms, a boron atom, a plurality of sulfur atoms and a plurality of vacancies, and no more than 0.17% of the donor atoms provide conduction electrons with an ionization energy of 0.25-0.27eV. The preparation method of co-doped diamond is mainly to place the diamond substrate in the hot wire reaction chamber, and pass hydrogen gas into the hot wire reaction chamber until the pressure reaches above 35 Torr; heat the hot wire to 2000-2400 ° C, and heat the diamond substrate to 650-1000°C; pass hydrogen gas containing carbon source and boron-sulfur dopant into the hot wire reaction chamber, and deposit boron-sulfur co-doped diamond on the crystal surface of the diamond substrate. The co-doped diamond and its preparation method, semiconductor material, and device can obtain high-quality n-type semiconductor materials and meet the performance requirements of diamond-based semiconductor devices.

Description

technical field [0001] The present application relates to the field of semiconductor materials, in particular, to a co-doped diamond and its preparation method, semiconductor material and device. Background technique [0002] It has been proved by theory and practice that diamond has excellent semiconductor performance characteristics. As a semiconductor material, diamond has the characteristics of wide band gap, high mobility of electrons and holes, small dielectric constant, and large breakdown electric field. High output power devices, light-emitting devices that can emit ultraviolet light, electron emitters driven by low voltage, etc. [0003] To realize the semiconductor function of diamond, it needs to be effectively doped to make it have n-type or p-type conductivity. At present, there are mainly three kinds of diamond doping methods, namely, diffusion method, ion implantation method and CVD (chemical vapor deposition, chemical vapor deposition) in-situ doping metho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C30B25/00C30B29/06H01L21/02
CPCC23C16/271C23C16/277C30B25/00C30B29/06H01L21/02527H01L21/0262
Inventor 彭建国陈宏伟彭伟华孔智超
Owner BEIJING ALMAS TECH CO LTD