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A method of making a suspended infrared thermal stack on a substrate

An infrared thermal and substrate technology, which is applied in the direction of final product manufacturing, microstructure device manufacturing, sustainable manufacturing/processing, etc., can solve problems such as low mechanical strength, large device size, and complex process of suspended infrared thermal piles, so as to avoid Backside etching, the effect of improving production yield

Active Publication Date: 2022-08-09
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of method that makes suspension infrared thermopile on substrate, is used to solve the problem that the suspension infrared thermopile that the method of prior art makes has complicated process, mechanical Problems such as low strength and large device size

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  • A method of making a suspended infrared thermal stack on a substrate
  • A method of making a suspended infrared thermal stack on a substrate
  • A method of making a suspended infrared thermal stack on a substrate

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[0043] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0044] Please see attached image. It should be noted that the drawings provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, so the drawings only show the components related to the present invention rather than the number, shape and the number of components in actual implementation. For dimension drawing, the type, quantity and proportion of each component can be arbitrarily changed...

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Abstract

The invention provides a method for making a suspended infrared thermal stack on a substrate, the method comprising: forming a lateral corrosion guide layer on the surface of the substrate; depositing a sacrificial layer; making a thermocouple layer and an absorbing film layer; Double protective layer, etch to form etch holes, remove the lateral corrosion guide layer, longitudinal corrosion guide layer and substrate through the etch holes to form a thermal insulation cavity; remove the thermocouple protective layer, deposit the lead insulation layer, and etch the lead insulation layer to form contact holes, and then metal leads are formed; the sacrificial layer and part of the lead insulation layer are removed to obtain a suspended infrared thermal stack. The invention adopts a single-sided processing technology, can be used to realize the monolithic integration of the micro sensor and the integrated circuit, and is favorable for small size, low cost and mass production. In addition, the sacrificial layer is used to enhance the structural strength and improve the production yield.

Description

technical field [0001] The invention belongs to the technical field of silicon micromechanical sensing, in particular to a method for making a suspended infrared thermal stack on a substrate. Background technique [0002] With the rapid development of MEMS technology, infrared detectors based on MEMS micromachining technology have been widely used in thermopile infrared detectors due to their small size and low price. Now they are widely used in non-contact temperature measurement, gas sensing , security, satellite attitude control, infrared imaging and other fields. Compared with other types of infrared detectors, thermopile infrared detectors have obvious advantages, for example, they can work at room temperature without refrigeration equipment; they have the characteristics of self-excitation to generate signals, no need to apply additional bias voltage / current, and avoid self-excitation. The heating effect ensures low power consumption at the same time: the direct measu...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
CPCB81C1/00349B81C1/00373B81C1/0015Y02P70/50
Inventor 李昕欣周温涵倪藻
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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