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Terahertz wave light-operated modulator and preparation method thereof

A terahertz and modulator technology, applied in the field of terahertz wave control devices, can solve problems such as difficulty, high complexity, and difficulty in storage, and achieve the effects of improving service life, high-efficiency modulation, and easy operation and use

Active Publication Date: 2019-12-20
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Even so, because two-dimensional materials are usually not stable enough, it will cause great problems in the storage and use of devices, and it is quite difficult to prepare two-dimensional materials on devices, and the production cost is relatively high. All these make it difficult for the above-mentioned terahertz optical modulator prepared with two-dimensional materials to go out of the laboratory to meet the practical application.
[0006] Based on the above status quo, in the field of terahertz wave sensing and imaging technology, it is obvious that better technical solutions are needed to solve the current technical problems of high cost, high complexity, and difficult storage of existing optically controlled semiconductor modulators.

Method used

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  • Terahertz wave light-operated modulator and preparation method thereof
  • Terahertz wave light-operated modulator and preparation method thereof
  • Terahertz wave light-operated modulator and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0043] Embodiment 1 Modulator Deposited Aluminum Oxide Film Fabrication Process

[0044] In this embodiment, an n-type double-throw intrinsic silicon wafer with a crystal orientation is used, the resistivity is 10000Ω·cm, and the thickness is 100 μm. A thermal ALD system was adopted, with trimethylaluminum and water as the reaction source, argon as the carrier gas, and nitrogen purge gas. Sample deposition was performed at 250°C. The reaction principle of passivation is: 2Al(CH 3 ) 3 +3H 2 O→Al 2 o 3 +6CH 4 . Afterwards, the manufactured device was annealed at 400° C. for 5 minutes in a nitrogen atmosphere using a rapid annealing furnace. For the specific manufacturing process of the modulator, please refer to the appendix of the manual. figure 1 As shown, it mainly includes two parts, namely the silicon wafer cleaning process and the aluminum oxide film deposition process (silicon wafer passivation).

[0045] Silicon wafers will always introduce pollutants during t...

Embodiment 2

[0053] Embodiment 2 Modulation-based terahertz wave enhanced imaging

[0054] Instructions attached Figure 5 It is a schematic diagram of an embodiment of using a passivated terahertz wave optical control modulator to realize terahertz single-pixel enhanced imaging. Imaging target 10 such as Figure 5 Attached to the back of the terahertz wave optical control modulator 1 as shown, the 800nm ​​femtosecond laser is divided into two beams through the beam splitter 2, one beam enters the transmitting end 3 to generate a terahertz wave, and the other beam passes through the delay line 4 to irradiate the Receiver 5. The generated terahertz light is collimated by the discrete parabolic mirror 61 and illuminates the terahertz wave optical control modulator 1 of the present invention, and the transmitted terahertz wave is focused on the receiving end 5 through the discrete parabolic mirror 62. After the terahertz wave is coherent with the femtosecond light The transmitted terahertz...

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Abstract

The invention discloses a terahertz wave light-operated modulator and a preparation method thereof. The terahertz wave light-operated modulator is characterized by depositing passivation layers on a terahertz wave incident surface and a terahertz wave emergent surface of an intrinsic semiconductor material by utilizing an atomic layer deposition system, a plasma-enhanced chemical vapor depositionmethod or a low-pressure chemical vapor deposition method on the semiconductor material, wherein the passivation layers are aluminum oxide films, silicon nitride or silicon oxide. The surface defectsof the intrinsic semiconductor material are improved by adopting a passivation process, so as to obtain higher carrier concentration, thus the requirements and cost of a terahertz wave related systemon illumination can be reduced, and the system is more integrated and the user operation is facilitated. Besides, the passivation layers can isolate the contact between the semiconductor and the air,thereby preventing oxidation and pollution, enhancing the stability of the terahertz wave light-operated modulator, and prolonging the service life of the modulator.

Description

technical field [0001] The invention relates to the technical field of terahertz wave sensing and imaging, in particular to a terahertz wave control device. Background technique [0002] Terahertz wave refers to (frequency 10 11 Hz-10 13 Hz or wavelength 30μm-3mm) coherent electromagnetic radiation located between the microwave band and the optical band. It has unique properties due to its special position in the transition from electronics to photonics in the electromagnetic spectrum. For example, the characteristic modes of many important biomolecules (such as proteins, DNA) and low-frequency vibrations of biological cells (such as the collective vibration and rotation of molecular skeletons and weak forces between molecules) are in the terahertz spectrum range (spectral fingerprinting) . Based on terahertz spectral analysis, relevant information such as spatial conformation, reaction kinetics, hydration and biological functions of biomolecules can be analyzed. In add...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/015
CPCG02F1/015Y02P70/50
Inventor 鲁远甫佘荣斌李光元刘文权张锐
Owner SHENZHEN INST OF ADVANCED TECH