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Method of improving photoelectric conversion efficiency of p-Si/PtSi photocathode decomposed water

A photoelectric conversion efficiency, photocathode technology, applied in the field of photoelectrochemistry, can solve the problem of low turn-on potential, achieve the effect of improving operation, improving catalytic activity of hydrogen production, and low cost

Active Publication Date: 2020-01-24
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the p-Si / PtSi photocathode photoelectrochemical water splitting on-potential is still low, requiring high external energy to split water, which makes the photoelectric conversion efficiency of solar energy in the photoelectric water splitting process (Applied bias photo-to- current efficiency, ABPE) is lower

Method used

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  • Method of improving photoelectric conversion efficiency of p-Si/PtSi photocathode decomposed water
  • Method of improving photoelectric conversion efficiency of p-Si/PtSi photocathode decomposed water
  • Method of improving photoelectric conversion efficiency of p-Si/PtSi photocathode decomposed water

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Embodiment 1

[0036] This embodiment prepares p-Si / PtSi photocathode:

[0037] At 75°C, a B-doped single crystal p-Si sheet with a resistivity of 8-12 Ω·cm was placed in H 2 O:H 2 o 2 :NH 4 Soak in a solution with OH volume ratio of 5:1:1 for 10 minutes. The soaked p-Si flakes were then placed in H 2 SO 4 :H 2 o 2 Clean by immersing in a solution with a volume ratio of 3:1 at 120°C for 15 minutes. Soak the cleaned p-Si sheet in a 5% HF solution for 10 seconds to remove the surface oxide layer, then wash it with deionized water and dry it in a rotary drying oven under inert gas N 2 Tumble dry under cover. The dried p-Si sheet was immediately put into the magnetron sputtering chamber, and a Pt film with a thickness of about 8 nm was deposited on the p-Si sheet with a platinum target at a deposition rate of 4 nm / min. Put the p-Si sheet deposited with Pt thin film into the rapid heat treatment furnace, in the high-purity N 2 Rapid heat treatment at 550° C. for 30 seconds in the atmos...

Embodiment 2

[0039] In this embodiment, the p-Si / PtSi photocathode is electrochemically oxidized using the constant current method:

[0040] In 1M KOH aqueous solution, the p-Si / PtSi photocathode, graphite rod electrode and mercury / mercury oxide electrode prepared in Example 1 were used as the working electrode, counter electrode and reference electrode respectively, and the work was performed by a CHI 660E electrochemical workstation. The electrode applied current density is 1×10 -5 A / cm 2 The constant current was maintained for 30 minutes to obtain the p-Si / PtSi photocathode treated by electrochemical oxidation.

[0041] figure 1 Shown are the XPS spectra of the p-Si / PtSi photocathode before and after electrochemical oxidation treatment. Through the analysis of this result, it can be seen that the PtSi on the surface of p-Si / PtSi after the electrochemical oxidation treatment is transformed into a platinum-silicon compound Pt in the platinum-rich phase. x Si(x>1).

[0042] Figure 2...

Embodiment 3

[0047] In this embodiment, the p-Si / PtSi photocathode is electrochemically oxidized using the constant current method:

[0048] In 1M KOH aqueous solution, the p-Si / PtSi photocathode, graphite electrode and mercury / mercury oxide prepared in Example 1 were used as the working electrode, counter electrode and reference electrode respectively, and applied to the working electrode through the CHI 660E electrochemical workstation. Current density 1×10 -3 A / cm 2 The constant current was maintained for 30 minutes to obtain the p-Si / PtSi photocathode treated by electrochemical oxidation.

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Abstract

The invention discloses a method of improving photoelectric conversion efficiency of p-Si / PtSi photocathode decomposed water. The method comprises the following step of carrying out electrochemical oxidation treatment on a p-Si / PtSi photocathode in an alkaline solution, wherein a platinum phase-enriched platinum silicate PtxSi(x)1 is formed on the surface of a PtSi film in the p-Si / PtSi photocathode, and performance of electrochemical catalysis of decomposed water on the surface of the p-Si / PtSi photocathode is enhanced, so that the photoelectric conversion efficiency of the photoelectrochemically decomposed water of the p-Si / PtSi photocathode is improved. The method of improving photoelectric conversion efficiency of p-Si / PtSi photocathode decomposed water is simple to operate and low incost and has positive meaning in promoting development and application of a technique of photoelectrochemically decomposed water.

Description

technical field [0001] The invention relates to the technical field of photoelectrochemistry, in particular to a method for improving the photoelectric conversion efficiency of p-Si / PtSi photocathode for splitting water. Background technique [0002] At present, fossil energy is increasingly scarce, and serious environmental pollution problems are generated in the process of energy use. Using photoelectrochemical water splitting to convert solar energy into clean energy hydrogen is an effective way to solve the above energy and environmental pollution problems. During the photoelectrochemical water splitting reaction, the photocathode produces hydrogen half-reaction and the photoanode produces oxygen half-reaction. Among them, the hydrogen generated by the photocathode can be directly used as a clean fuel or used in chemical synthesis. Therefore, constructing photocathode devices with high performance is the focus of realizing efficient photoelectrochemical water splitting...

Claims

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Application Information

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IPC IPC(8): C25D11/32C25B1/04C23C14/35C23C14/16C23C14/58C23C14/02C23C16/50C23C16/40C23C16/56C25B11/06
CPCC23C14/021C23C14/165C23C14/35C23C14/5806C23C16/402C23C16/50C23C16/56C25B1/04C25D11/32C25B1/55C25B11/051C25B11/059C25B11/075Y02E60/36Y02P20/133
Inventor 师文生张皓月佘广为李生阳
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI