Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of perovskite light emitting diode capable of improving performance

A perovskite and high-performance technology, which is applied in the field of perovskite light-emitting diode preparation, can solve the problems of limited solubility of inorganic perovskite light-emitting layer, discontinuous perovskite light-emitting layer, easy crystallization of thin film, etc. Effects of internal defects and device leakage current, improvement of performance and stability, and improvement of film coverage

Active Publication Date: 2020-01-31
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problem that the inorganic perovskite light-emitting layer has limited solubility and the film is easy to crystallize to form an uneven and discontinuous perovskite light-emitting layer in the preparation method of the perovskite light-emitting diode in the prior art, the present invention provides a Method for making perovskite light-emitting diodes that can improve performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of perovskite light emitting diode capable of improving performance
  • Preparation method of perovskite light emitting diode capable of improving performance
  • Preparation method of perovskite light emitting diode capable of improving performance

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0041] A method for preparing a perovskite light-emitting diode that can improve performance, comprising the following steps:

[0042] Step 1), preparing an anode interface layer 3 on a substrate 1 with a patterned transparent anode layer 2;

[0043] Step 2), preparing an anode interface modification layer 4 on the substrate of the anode interface layer 3;

[0044] Step 3), growing a perovskite light-emitting layer 5 on the anode modification layer 4;

[0045] Step 4), evaporating above the perovskite light-emitting layer 5 to obtain a cathode interface layer 6 , a cathode interface modification layer 7 and a cathode layer 8 .

[0046] Specifically:

[0047]1) Place the cleaned substrate 1 with a patterned transparent anode layer 2 with a thickness of 50-200 nanometers on the bracket of a spin coater, and evenly coat the entire sheet with PEDOT:PSS through a 0.45 micron filter head, By adjusting the rotation speed of the spin coater to 1000-5000 rpm, PEDOT:PSS forms a 10-50...

Embodiment 1

[0080] The preparation method of the perovskite light-emitting diode of the present embodiment comprises the following steps:

[0081] 1) Place the cleaned glass substrate with a patterned transparent anode ITO with a thickness of 120 nanometers on the bracket of the spin coater, pass through a 0.45 micron filter head, evenly coat the entire sheet with PEDOT:PSS, and adjust the spin coating The rotation speed of the coating machine is 2500 revolutions per minute, so that PEDOT:PSS forms a 30-nm-thick anode interface layer on the surface of the transparent electrode, and heats it in an oven at 120°C for 30 minutes;

[0082] 2) Place the transparent anode substrate coated with PEDOT:PSS on the bracket of the spin coater after cooling, and evenly coat the whole sheet with the ethanolamine solution. By adjusting the rotation speed of the spin coater to 2500 rpm, the transparent electrode A monomolecular anode interface modification layer is formed on the surface, and placed on a h...

Embodiment 2

[0088] The preparation method of the perovskite light-emitting diode of the present embodiment comprises the following steps:

[0089] 1) Place the cleaned glass substrate with a patterned transparent anode ITO with a thickness of 50 nanometers on the bracket of the spin coater, and apply PEDOT:PSS evenly to the entire sheet through a 0.45 micron filter head. The rotation speed of the coating machine is 1000 revolutions per minute, so that PEDOT:PSS forms a layer of 50 nm thick anode interface layer on the surface of the transparent electrode, and heats it in an oven at 120°C for 30 minutes;

[0090]2) Place the above-mentioned transparent anode substrate coated with PEDOT:PSS on the bracket of the spin coater after cooling, and evenly coat the whole sheet with the isopropanolamine solution, and adjust the rotation speed of the spin coater to 5000 revolutions per minute. A monomolecular anode interface modification layer is formed on the surface of the transparent electrode, w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method capable of improving the performance of a perovskite light emitting diode. The preparation method of the perovskite light emitting diode has obvious advantages in improving the coverage of the perovskite film and improving the luminous efficiency and stability of the perovskite light emitting diode. As the solubility of the inorganic perovskite light-emitting layer is limited and the thin film is liable to crystallize to form an uneven and discontinuous perovskite light emitting layer to influence the performance of the device, alkolamine compounds are used as anode interface modification layers to effectively improve the morphology of the perovskite thin film so as to improve the coverage of the thin film, reduce internal defects of the thin film and the leakage current of the device and thus improve the performance and the stability of the light emitting device.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a preparation method of a perovskite light-emitting diode that can improve performance. Background technique [0002] Metal halide perovskite semiconductor materials have attracted extensive attention from researchers in the field of optoelectronic energy due to their advantages such as high optical absorption coefficient, long carrier diffusion length, low defect state density, high carrier mobility, and high fluorescence quantum efficiency. In recent years, the field of electroluminescence has achieved rapid development. [0003] Perovskite light-emitting diodes (PeLEDs) that can work at room temperature were first reported by Richard H.Friend and Zhi-Kuang Tan et al. in 2014, with MAPbI 3-X and MAPbBr 3 (MA=CH 3 NH 3 + ) as the near-infrared and green PeLEDs of the light-emitting layer achieved external quantum efficiencies (EQE) of 0.76% and 0.1%, respectiv...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/56H01L51/54H01L51/52
CPCH10K50/81H10K2102/00H10K71/00
Inventor 郭晓阳欧剑峰林杰范翊吕营刘星元
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com