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A preparation method of high dielectric copper/polyvinylidene fluoride composite material

A polyvinylidene fluoride and composite material technology, which is applied in the field of preparation of high-dielectric copper/polyvinylidene fluoride composite materials, can solve the problems of large dielectric loss, small copper particles, high density, etc., and achieves low cost and improved dispersion. The effect of the properties and the simple preparation method

Active Publication Date: 2020-12-25
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the preparation of composite materials, due to the small size and high density of copper particles, it is easy to agglomerate, especially when the content is close to the percolation threshold, which in turn leads to a large dielectric loss in the composite material
[0005] In order to meet the requirements of dielectric properties in practical applications, it is necessary to reduce its dielectric loss while maintaining its dielectric constant, but there is still room for improvement in the dielectric constant of copper / polyvinylidene fluoride composite materials currently prepared , so it is necessary to provide a copper / polyvinylidene fluoride composite material with a higher dielectric constant

Method used

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  • A preparation method of high dielectric copper/polyvinylidene fluoride composite material
  • A preparation method of high dielectric copper/polyvinylidene fluoride composite material
  • A preparation method of high dielectric copper/polyvinylidene fluoride composite material

Examples

Experimental program
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Effect test

Embodiment 1

[0030] A high dielectric copper / polyvinylidene fluoride composite material, specifically comprising the steps of:

[0031] S1. Weigh 0.6g of polyvinylidene fluoride and 3mL of N,N-dimethylformamide, stir and dissolve at room temperature into a transparent viscous liquid;

[0032] S2. Weigh 0.335g of copper powder and 0.00763g of L-cysteine, then add 3mL of N,N-dimethylformamide, and sonicate for 20min;

[0033] S3. Transfer the viscous liquid in S1 to S2, and after stirring at room temperature for 1 hour, take out the stirring bar, vacuumize, and remove the air in the sol;

[0034] S4. Cast the sol onto a preheated glass sheet, scrape it flat with a scraper, put it in a vacuum oven at 150° C., evacuate, heat at a constant temperature for 1 hour, and then cool to room temperature to obtain a copper / polyvinylidene fluoride film.

[0035] At room temperature, the dielectric constant of the composite material prepared in this embodiment at 100 Hz was 19.09, and the dielectric los...

Embodiment 2

[0045] A high dielectric copper / polyvinylidene fluoride composite material, specifically comprising the steps of:

[0046] S1. Weigh 0.6g of polyvinylidene fluoride and 3mL of N,N-dimethylformamide, stir and dissolve at room temperature into a transparent viscous liquid;

[0047] S2. Weigh 0.754g of copper powder and 0.0153g of L-cysteine, then add 3mL of N,N-dimethylformamide, and sonicate for 20min;

[0048] S3. Transfer the viscous liquid in S1 to S2, and after stirring at room temperature for 1 hour, take out the stirring bar, vacuumize, and remove the air in the sol;

[0049] S4. Cast the sol onto a preheated glass sheet, scrape it flat with a scraper, put it in a vacuum oven at 150° C., evacuate, heat at a constant temperature for 1 hour, and then cool to room temperature to obtain a copper / polyvinylidene fluoride film.

[0050] At room temperature, the dielectric constant of the composite material prepared in this experimental example was 33.91 at 100 Hz, and the diele...

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Abstract

The invention discloses a preparation method of a high-dielectric copper / polyvinylidene fluoride composite material. The method comprises the following steps: S1, uniformly mixing polyvinylidene fluoride powder with solvent N, N-dimethylformamide to obtain viscous liquid; s2, performing surface treatment on copper, specifically, mixing copper particles and coupling agent L-cysteine in the solventN, N-dimethylformamide for ultrasonic treatment for 10-30 min; s3, pouring the viscous liquid obtained in the step S1 into the mixture obtained in the step S2, and uniformly stirring to obtain a mixedsol; and S4, casting the mixed sol obtained in the step S3 onto a glass slide, scraping into a film, heating to 140-150 DEG C in vacuum, keeping the temperature for 0.5-1.5 hours, and cooling to roomtemperature to obtain the high-dielectric copper / polyvinylidene fluoride composite material. By introducing the new environment-friendly coupling agent, the dispersity of the copper in a polyvinylidene fluoride base is improved, the problem of high dielectric loss of a fine conductive particle / polymer composite material system can be effectively solved, and meanwhile, the dielectric constant is effectively improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing polymer composite materials, and more specifically, to a method for preparing high dielectric copper / polyvinylidene fluoride composite materials. Background technique [0002] With the rapid development of microelectronics technology, electronic components are gradually replacing traditional components, and the requirements for miniaturization, high energy storage, and multi-function are inevitable trends. Passive components have received wide attention due to their continuous growth in demand, especially embedded passive appliances, which can effectively save board surface space, reduce size, reduce weight and thickness, and improve overall performance. The development trend of microelectronics technology puts forward higher requirements on the dielectric properties of polymer materials. [0003] Pure polymers have a low dielectric constant, and the two-phase / three-phase composite material...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L27/16C08K9/04C08K3/08C08J5/18
CPCC08J5/18C08J2327/16C08K9/04C08K2003/085C08K2201/001
Inventor 余丁山郑敏珍曹长林陈潇川陈旭东
Owner SUN YAT SEN UNIV
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