GaN/AlGaN heterojunction material based on monocrystalline diamond substrate and preparation method of GaN/AlGaN heterojunction material

Abstract

The invention relates to a GaN / AlGaN heterojunction material based on a monocrystalline diamond substrate and a preparation method of the GaN / AlGaN heterojunction material. The method comprises stepsof selecting a monocrystalline diamond substrate; generating a graphene layer on an upper surface of the monocrystalline diamond substrate; growing an AlN nucleating layer on an upper surface of the graphene layer; growing a low-temperature GaN transition layer on an e upper surface of the AlN nucleating layer; growing a GaN buffer layer on an upper surface of the low-temperature GaN transition layer; and growing an AlGaN barrier layer on an upper surface of the GaN buffer layer. The preparation method is advantaged in that graphene is transferred to the monocrystalline diamond substrate withany crystal face, the GaN / AlGaN heterojunction material can be grown on the monocrystalline diamond substrate with any crystal face, the limitation on a crystal face of a substrate when the GaN material is extended on the diamond is broken through, process difficulty is simplified, and the quality of the heterojunction material is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a GaN / AlGaN heterojunction material based on a single crystal diamond substrate and a preparation method thereof. Background technique [0002] Nitride semiconductor materials have the advantages of large band gap, high carrier mobility, and strong breakdown field, and have great application potential in high-frequency, high-voltage, and high-power semiconductor devices. Usually, nitride semiconductor materials are epitaxially grown on Si, sapphire or SiC substrates, but the thermal conductivity of these substrates is relatively low, resulting in poor heat dissipation performance of nitride-based semiconductor devices, which severely limits the performance of nitride semiconductors. Applications of semiconductor devices under high power conditions. [0003] Diamond has the highest thermal conductivity in nature and is especially suitable for heat dissipation...

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Problems solved by technology

[0004] However, the AlN nucleation layer grown by MOCVD (Metal Organic Chemical Vapor Deposition) was directly used in the above paper to carry out epitaxial growth of GaN material on the (111) plane diamond substrate. On the one hand, the lattice mismatch between GaN and diamond is large, resulting in Poor material quality and difficult growth limit the characteristics of the resulting device; on the other hand, the (111) surface diamond substrate is difficult to grow and small in size, making the overall manufacturing cost of the device higher

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