Preparation method and application of titanium tetrafluoride passivated perovskite battery interface
A technology of perovskite battery and titanium tetrafluoride, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of less research on multivalent metal ions, achieve good repeatability, improve efficiency and stability, and operate easy effect
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[0024] Step 1. Preparation of titanium tetrafluoride doped perovskite thin film
[0025] First weigh 484.1mg of lead iodide, 146.8mg of lead bromide, 202.2mg of formamidine iodine and 62.7mg of iodide powder dissolved in 1mL of N,N-dimethylformamide and dimethyl sulfoxide (volume ratio of 4 : 1) form concentration 1mol / mL in the solvent. Then heated and stirred at 120° C. for 1 hour to form a perovskite precursor solution. Take 0-20 μL of 0.4 mg / mL titanium tetrafluoride N,N-dimethylformamide solution and add it to 100 μL perovskite precursor solution, mix evenly, spin-coat on the FTO glass covered with titanium dioxide, and then 120 μL ℃ for 10 minutes, 100 ℃ for 40 minutes.
[0026] figure 1 For the SEM of the as-prepared thin film, it can be seen that TiF4 doping forms a dense thin film.
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