17 results about "Titanium fluoride" patented technology

The application discloses a transition metal fluoride super ionic conductor dielectric film and a preparation method thereof. The super ionic conductor dielectric film is prepared by a thermal evaporation method from a transition metal fluoride super ionic conductor. The transition metal fluoride super ionic conductor is selected from scandium fluoride, yttrium fluoride, titanium fluoride, hafnium fluoride, manganese fluoride, ferrous fluoride and nickel fluoride. In the application, the source material of the transition metal fluoride is heated and evaporated into a gaseous state in an evaporation system by the thermal evaporation method. The gaseous fluoride is directly adhered to a substrate placed on the upper side of the source material and recrystallized, so that the thickness of the transition metal fluoride is controllable, the number of defects is controllable and the integration is very high. The super ionic transition metal fluoride dielectric material can show great potential in the design and manufacture of new functional devices.

This invention belongs to the field of passivating agent technology, specifically relating to a corrosion-resistant, high-temperature-resistant, chromium-free passivating agent for magnesium alloy workpieces and its preparation method. The chromium-free passivating agent comprises the following components by weight: 4-5 parts film-forming agent; 8-10 parts functional acrylic resin; 0.8-1 parts vanadate; 3-5 parts coupling agent; 1-2 parts corrosion inhibitor; and 70-80 parts water. The chromium-free passivating agent provided by this invention uses zirconium fluoride and titanium fluoride as film-forming agents, and is modified by adding functional acrylic resin, which improves the density and corrosion resistance of the passivation film. This results in a chromium-free passivating agent with good corrosion resistance, adhesion, high-temperature resistance, and antibacterial properties. When used in magnesium alloy workpieces, it exhibits good corrosion resistance and helps extend the service life of the magnesium alloy workpieces.

The application provides a high-inductance copper-iron co-fired inductor, which comprises soft magnetic metal powder, a copper conductor and nanocrystalline strip material, the copper conductor is connected perpendicularly with the nanocrystalline strip material and is embedded in the soft magnetic metal powder, and the copper conductor extends out of the soft magnetic metal powder at both ends; the soft magnetic metal powder comprises mixed powder of different particle size gas atomized iron-nickel-molybdenum powder, a passivating agent, a coating agent and a lubricant; the passivating agent is a mixed solution of oxalic acid and nitric acid; the coating agent is a mixture of fluorosilicon resin, titanium trifluoride, aluminum trifluoroacetyl acetonate and nanometer barium titanate acetone solution; the lubricant is a mixture of gas phase aluminum oxide and niobium diselenide; the thickness of the nanocrystalline strip material is 1-1.5 um, and the width is 2-4 mm. The application uses the gas atomized iron-nickel-molybdenum powder with the highest magnetic permeability in the soft magnetic metal powder, so that the inductance value of the inductor reaches the maximum value, and the gas atomized iron-nickel-molybdenum powder has very low loss and excellent stability, so that the inductor has good loss performance and excellent reliability.

The invention discloses a titanium fluoride doped ferric oxide photo-anode and a preparation method and application thereof, and belongs to the technical field of photoelectrochemistry. The preparation method of the titanium fluoride doped ferric oxide photo-anode comprises the following steps: placing conductive glass in a mixed solution of an iron source and a titanium source, carrying out a hydrothermal reaction, and calcining to obtain a Ti-Fe2O3 photo-anode; and carrying out fluorination treatment on the Ti-Fe2O3 photo-anode, so as to obtain the titanium fluoride doped ferric oxide photo-anode. The titanium fluoride doped ferric oxide photo-anode prepared by the invention can be combined with a photoelectric detection technology to effectively detect voltage in glucose solutions with different concentrations, and the titanium fluoride doped ferric oxide photo-anode has the properties of visible light response, higher photoelectric conversion efficiency, organic matter catalytic oxidation efficiency, long-time working stability and the like; the titanium fluoride doped iron oxide photoanode prepared by the invention provides an analysis method with simple detection steps for effective voltage detection of glucose.

The invention relates to a liquid silicone rubber composition and a preparation method thereof. According to the composition, the modified liquid silicone rubber, the graphene filler and the tert-butyl peroxybenzoate cross-linking agent are introduced, and a proper catalyst (such as titanium fluoride) and a proper plasticizer (such as dioctyl phthalate) are combined, so that the mechanical property, the heat conductivity and the self-repairing capability of the liquid silicone rubber are effectively improved. In the preparation process, graphene is used as a filler to enhance the thermal conductivity and tensile strength of the material, and the cross-linking reaction improves the structural stability and durability of the material. The composition has excellent high temperature resistance, chemical resistance and excellent self-repairing characteristic, and can provide reliable moisture-proof and insulation protection in the fields of electrical equipment, automobiles, medical treatment and the like. Experimental results show that the original performance of the liquid silicone rubber material can be recovered through heat treatment after the liquid silicone rubber material is damaged for multiple times, and the liquid silicone rubber material shows relatively high repair efficiency. The liquid silicone rubber composition provided by the invention has a wide application prospect.

The present application is a method for depositing a metal conductive layer on a glass substrate, comprising the following steps: cleaning a glass substrate and forming a titanium metal thin film on the surface of the glass substrate. The titanium metal thin film is surface treated by a reaction plasma to become an intermediate layer, wherein the reaction plasma includes an oxygen plasma, a nitrogen plasma, a fluorine plasma or a chlorine plasma, and the intermediate layer includes a titanium oxide thin film, a titanium nitride thin film, a titanium fluoride thin film or a titanium chloride thin film. A titanium metal conductive layer is formed on the intermediate layer of the glass substrate. The titanium metal conductive layer is connected to the glass substrate through the intermediate layer, which can increase the adhesion between the titanium metal conductive layer and the glass substrate, and is conducive to improving the yield and reliability of subsequent packaging processes.

The invention discloses a titanium-containing ore separation method and a titanium-containing ore separation system. The separation method comprises the following steps: carrying out fluorination reaction on a fluorinating agent and titanium-containing ore to obtain a fluorinated product; carrying out first-stage sublimation-desublimation treatment on the fluorinated product to obtain a mixture of silicon-containing fluoride and an unreacted fluorinating agent and first-stage sublimation residues; performing second-stage sublimation-desublimation treatment on the first-stage sublimation residues to obtain titanium-containing fluoride and second-stage sublimation residues; and carrying out third-stage sublimation-desublimation treatment on the second-stage sublimation residues to obtain vanadium-containing fluoride and third-stage sublimation residues. According to the separation method provided by the invention, silicon oxide, titanium oxide, vanadium oxide, iron oxide and the like in the ore react with the fluorinating agent to generate a mixture containing various fluorides; and sublimating fluorides corresponding to the elements from a mixture generated by the fluorination reaction at different temperature sections, so as to separate and purify a target product.

Method comprising: forming a dummy gate structure (75) over a semiconductor fin (64); forming a dielectric layer (90) on opposite sides of the dummy gate structure (75); removing the dummy gate structure (75) to form a recess (92) in the dielectric layer (90); successively forming a gate dielectric layer (94) and at least one conductive layer (96, 98) over side walls and a bottom surface of the recess (92);and treating the gate dielectric layer (94) and the at least one conductive layer (96, 98) with a fluoride-containing chemical, wherein the treatment comprises forming a film over the at least one conductive layer (96, 98) using a fluoride-containing precursor, wherein the fluoride-containing precursor is molybdenum hexafluoride, MoF6, iron(II) fluoride, FeF2, iron(III) fluoride, FeF3, nickel(II) fluoride, NiF2, cobalt(II) fluoride, CoF2, chromium(II) fluoride, CrF2, chromium(III) fluoride, CrF3, copper(I) fluoride, CuF, molybdenum(III) fluoride, MoF3, titanium(III) fluoride, TiF3, titanium(IV) fluoride, TiF4, aluminum fluoride, AlF3, tetrafluorosilane, SiF4, manganese(II) fluoride, MnF2, zirconium(IV) fluoride, ZrF4, niobium(V) fluoride, NbF5, hafnium(IV) fluoride, HfF4, tantalum(V) fluoride, TaF5, sodium fluoride, NaF, potassium fluoride, KF, lithium fluoride, LiF, magnesium fluoride, MgF2, calcium fluoride, CaF2, barium fluoride, BaF2, zinc fluoride, ZnF2 or lead(II) fluoride, PbF2.;

The invention provides a positive pole piece, a secondary battery, a battery pack and an energy storage system, the secondary electrode comprises the positive pole piece, the positive pole piece comprises a positive active material with a core-shell structure, the core of the core-shell structure is a layered transition metal oxide, the shell of the core-shell structure is made of a first fluoride, and the first fluoride is made of a second fluoride. The first fluoride is selected from at least one of zinc fluoride, zirconium fluoride, niobium fluoride, titanium fluoride and cadmium fluoride. According to the present invention, even if the active layer including the positive electrode active material cracks, the layered transition metal oxide does not directly contact the electrolyte, but the layered transition metal oxide is separated from the electrolyte through the shell, such that the transition ions in the layered transition metal oxide are prevented from being dissolved, and the cycle stability of the secondary battery is improved. Zinc, zirconium, niobium, titanium and cadmium belong to transition metals and have relatively good stability, and the shell contains fluorides of the elements, so that the positive active material has long-term stability, and the long cycle stability of the secondary battery is improved.

The invention discloses a technological method for prolonging the service life of a CVD tungsten machine table. The technological method comprises the step that a Ti layer is formed on the surface of a bottom layer structure. N2 plasma treatment is carried out to nitride the surface of the Ti layer to form a TiN layer without C and O, and the Ti layer and the TiN layer are stacked to form an adhesion barrier layer. Tungsten chemical vapor deposition is carried out in a CVD tungsten machine table to form a tungsten seed crystal layer on the surface of the TiN layer, a tungsten-containing precursor of tungsten chemical vapor deposition comprises WF6, and in tungsten chemical vapor deposition forming the tungsten seed crystal layer, the WF6 and the TiN layer are subjected to a self-limiting reaction and form titanium fluoride, so that the tungsten seed crystal layer is formed. And by utilizing the characteristic that the TiN layer does not contain C and O, the thickness of a defective film formed by condensing titanium fluoride onto the gas spraying head of the CVD tungsten machine table is reduced or disappears, so that the service life of the gas spraying head is prolonged. The service life of the gas spraying head of the CVD tungsten machine table can be prolonged, and the size of the tungsten main body layer can be further increased, so that the contact resistance is reduced.

The hydrophobic EC outside rear-view mirror comprises hydrophobic surface layer glass, the surface layer glass comprises a lens base body, the surface of the lens base body is provided with a layer of hydrophobic film capable of enabling the water drop angle to be larger than or equal to 110 degrees, and the hydrophobic film is made of titanium oxide and titanium fluoride composite target materials or silicon carbide target materials. The rearview mirror has the advantages that the hydrophobic film made of the titanium oxide and titanium fluoride composite target material or the silicon carbide target material is good in corrosion resistance, the abrasion resistance and the scraping resistance of the glass surface can be improved, the service life of the surface glass is effectively prolonged, and therefore the service life of the rearview mirror is prolonged; an efficient hydrophobic layer can be formed, water and stains are prevented from being accumulated on the surface of the screen, meanwhile, the hydrophobic film is good in hydrophobic effect, the water drop angle is larger than or equal to 110 degrees, and the effect that water drops are not accumulated can be achieved.

This disclosure is a method for depositing a metal conductive layer on a glass substrate. Firstly, a glass substrate is cleaned, and then a titanium metal thin film is formed on the surface of the glass substrate. The titanium metal thin film is performed a surface treatment by using a reactive plasma to form an intermediate layer, wherein the intermediate layer includes a titanium oxide thin film, a titanium nitride thin film, a titanium fluoride thin film, or a titanium chloride thin film. A titanium metal conductive layer is formed on the intermediate layer of the glass substrate. The titanium metal conductive layer is connected to the glass substrate through the intermediate layer, which can increase the adhesion between the titanium metal conductive layer and the glass substrate, and is beneficial to improve the yield and reliability of subsequent packaging processes.

This invention discloses a titanium fluoride-doped iron oxide photoanode, its preparation method, and its application, belonging to the field of photoelectrochemical technology. The preparation steps of the titanium fluoride-doped iron oxide photoanode are as follows: Conductive glass is placed in a mixture of iron and titanium sources, subjected to a hydrothermal reaction, and calcined to obtain a Ti-Fe₂O₃ photoanode; the Ti-Fe₂O₃ photoanode is then fluorinated to obtain the titanium fluoride-doped iron oxide photoanode. The titanium fluoride-doped iron oxide photoanode prepared by this invention can effectively detect voltage in glucose solutions of different concentrations using photoelectric detection technology. Furthermore, the titanium fluoride-doped iron oxide photoanode exhibits visible light response, higher photoelectric conversion efficiency, higher catalytic oxidation efficiency for organic matter, and long-term operational stability. The titanium fluoride-doped iron oxide photoanode prepared by this invention provides a simple analytical method for the effective voltage detection of glucose.

The invention relates to ceramic, a preparation method thereof and an electrostatic chuck. The ceramic is prepared from the following raw materials in parts by mass: 72-97 parts of aluminum oxide, 1-10 parts of titanium nitride, 1-8 parts of titanium fluoride, 1-5 parts of aluminum fluoride and 1-5 parts of manganese nitride. Aluminum oxide, titanium nitride, titanium fluoride, aluminum fluoride and manganese nitride in a proper proportion are used as preparation raw materials, and the raw materials are matched with one another, so that the maximum load of the prepared ceramic is relatively large, the bending strength is relatively high, and the bearing capacity of the ceramic is relatively good.

Methods for depositing metal films using a metal halide precursor and diethyl zinc are described. The substrate is exposed to a first metal precursor and diethyl zinc to form the metal film. The exposures can be sequential or simultaneous. The metal films are pure with a low carbon content. The first metal precursor may be a metal halide selected from the group consisting of tantalum chloride, aluminum chloride, niobium chloride, titanium chloride, zirconium chloride, hafnium chloride, tungsten chloride, molybdenum chloride, tantalum bromide, aluminum bromide, niobium bromide titanium bromide, zirconium bromide, hafnium bromide, tungsten bromide, molybdenum bromide, tantalum fluoride, aluminum fluoride, niobium fluoride, titanium fluoride, zirconium fluoride, hafnium fluoride, tungsten fluoride, molybdenum fluoride, tantalum iodide, aluminum iodide, niobium iodide, titanium iodide, zirconium iodide, hafnium iodide, tungsten iodide, and molybdenum iodide.

To provide a new method for producing a lead titanium oxyfluoride compound, which is completely different from conventional high-temperature dry synthesis and hydrothermal synthesis and can cause problems such as coarsening of particles due to sintering.SOLUTION: A method for producing an oxyfluoride titanium lead compound, comprising the steps of: (a) dissolving a compound containing a titanium (IV) fluoride complex ion or a combination of a compound containing a fluorine atom capable of forming a titanium (IV) fluoride complex ion and a compound containing a titanium atom, a compound containing a lead atom, and a compound containing a boron atom in an amine solution; and (b) heating the resulting solution to produce an oxyfluoride titanium lead compound.SELECTED DRAWING: None

Methods for depositing metal films using a metal halide precursor and diethyl zinc are described. The substrate is exposed to a first metal precursor and diethyl zinc to form the metal film. The exposures can be sequential or simultaneous. The metal films are pure with a low carbon content. The first metal precursor may be a metal halide selected from the group consisting of tantalum chloride, aluminum chloride, niobium chloride, titanium chloride, zirconium chloride, hafnium chloride, tungsten chloride, molybdenum chloride, tantalum bromide, aluminum bromide, niobium bromide titanium bromide, zirconium bromide, hafnium bromide, tungsten bromide, molybdenum bromide, tantalum fluoride, aluminum fluoride, niobium fluoride, titanium fluoride, zirconium fluoride, hafnium fluoride, tungsten fluoride, molybdenum fluoride, tantalum iodide, aluminum iodide, niobium iodide, titanium iodide, zirconium iodide, hafnium iodide, tungsten iodide, and molybdenum iodide.