Complex structure getter film and preparation method thereof

A technology of getter film and composite structure, which is applied in the direction of ion implantation plating, coating, metal material coating process, etc., and can solve the problem of low suction capacity of getter film, short vacuum maintenance time, and extreme vacuum degree. No advanced problems, to achieve the effects of strong designability, good mechanical properties of the film layer, high versatility and universal applicability

Active Publication Date: 2020-03-06
ZHONGSHAN KAIXUAN VACUUM SCI & TECH CO LTD
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the above method can obtain a getter film with a low activation temperature and good mechanical properties, which brings convenience to the application of the getter in microelectronic devices, there is a disadvantage that the getter film has a significantly low getter capacity. For block getters, the ultimate vacuum degree that can be maintained is not high, and the vacuum maintenance time is not long, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Complex structure getter film and preparation method thereof
  • Complex structure getter film and preparation method thereof
  • Complex structure getter film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0038] Such as figure 1 As shown, in this embodiment, the preparation method of the composite structure getter film proposed by the present disclosure includes: providing a substrate; using the first getter alloy as a target material, and depositing a magnetic alloy on the substrate by magnetron sputtering. a controlled sputtering layer; and using the second getter alloy as a target material, a vacuum evaporation layer is deposited on the magnetron sputtering layer by a vacuum evaporation coating method to obtain a composite structure getter film. Figure 2A-Figure 2D A schematic structural view showing the preparation process of a composite structure getter film according to an embodiment of the present disclosure. The structure, connection mode and functional relationship of each main component of an exemplary embodiment of the composite structure getter film and its preparation method proposed in the present disclosure will be described in detail below with reference to the...

Embodiment 1

[0055] Zr-V-Fe composite films with thicknesses of 20nm, 500nm and 0.8μm were prepared by high-power pulse magnetron sputtering, medium-frequency magnetron sputtering and resistance evaporation on glass slides cleaned by alcohol and acetone ultrasonically. The sputtering target used is Zr 73.6 V 3.36 Fe 23.04 at.% alloy target, purity 99.0, circular planar target with size Ф160mm×5mm, the manufacturing process is vacuum melting and casting. in:

[0056] The power of high-power pulsed magnetron sputtering is 15kW, the average current is 0.4A, the duty ratio is 0.02, the pulse frequency is 100Hz, the pulse width is 200μs, the target base distance is 10cm, the coating time is 1800s, and the high power density (greater than 1000W / cm 2 ) under the action, the surface of the obtained film layer is dense, without voids and defects such as large particles.

[0057] The power of medium frequency magnetron sputtering is 8kW, the current is 25.3A, the power frequency is 40kHz, and th...

Embodiment 2

[0060] With P-type Si sheet as the coating substrate, Zr 76.2 co 20.7 Ce 3.1 at.% alloy target, preparation of rare earth Ce-doped Zr-Co composite structure getter film. During the high-power pulse coating process, the substrate is applied with a pulse bias voltage of -80V, and the coating time is 1200s. Other process conditions are with embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
frequencyaaaaaaaaaa
poweraaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a complex structure getter film and a preparation method thereof. The method comprises the steps that a substrate is provided; a first getter alloy is adopted as a target, and amagnetron sputtering layer is deposited on the substrate through a magnetron sputtering method; and a second getter alloy is adopted as a target, a vacuum evaporation layer is deposited on the magnetron sputtering layer through a vacuum evaporation coating method, and the complex structure getter film is obtained. According to the complex structure getter film and the preparation method thereof,the complex structure getter film with microcosmic gradient morphology design is constructed, so that the complex structure getter film meets the characteristics of good film layer mechanical property, high porosity, high air suction capacity, high air suction rate, low-temperature activation and the like, and god industrial application prospects are achieved.

Description

technical field [0001] The disclosure relates to the field of getters, in particular to a composite structure getter film and a preparation method thereof. Background technique [0002] As an important component to maintain a long-term vacuum environment, the getter (thin film) plays an irreplaceable role in electric vacuum devices due to its passive and low ultimate vacuum. With the rapid development of electric vacuum devices towards miniaturization and integration, and the emergence of micro-electromechanical systems (MEMS), the high-temperature activation process of traditional getters will increase the probability of damage to micro-devices and the difficulty of vacuum packaging of devices. In addition, with the increasing service life of these microelectronic devices, higher requirements are placed on the getter capacity and mechanical properties of the getter. Therefore, the development of new getters with low activation temperature, convenient device packaging proce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/32C23C14/14
CPCC23C14/35C23C14/3407C23C14/325C23C14/14
Inventor 李长安高峰李晓刚聂鹏胡双丽
Owner ZHONGSHAN KAIXUAN VACUUM SCI & TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap