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Light high-strength SiC porous material and preparation method thereof

A porous material and high-strength technology, applied in the field of lightweight and high-strength SiC porous materials and their preparation, can solve the problems of limited strength contribution of porous ceramics, and achieve the effect of high strength and low density

Inactive Publication Date: 2020-03-24
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current composition of SiC nanowires / whiskers / orientation of porous SiC ceramic nanowires / whiskers is random, so the contribution of nanowires / whiskers to the strength of porous ceramics is limited.

Method used

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  • Light high-strength SiC porous material and preparation method thereof
  • Light high-strength SiC porous material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] SiC nanowires (length-to-diameter ratio 50-100, diameter-100nm) were put into deionized water in batches, and a 10vol% SiC nanowire slurry was prepared by ultrasonic dispersion, and then the nanowire mass fraction was 10% Al 2 o 3 / Y 2 o 3(Molar ratio 3:2) The sintering aid is added to the dispersed SiC nanowire slurry, and further ultrasonically dispersed. The obtained slurry is sieved through a 60-mesh sieve to filter out large-sized agglomerates that are difficult to disperse. Add polyethylene glycol with a water quality of 10 wt% to the filtered slurry, stir it at high speed mechanically for 6 hours, then add a 1-octanol defoamer with a water content of 1%, and continue stirring for 1 hour to obtain a final paste suitable for printing. The obtained slurry is transferred to the barrel of the 3D printing device based on the slurry extrusion method. Under program control, at room temperature, the paste in the barrel is extruded through a needle with a diameter of 4...

Embodiment 2

[0032] What is mainly prepared in this example is a porous silicon carbide ceramic composed of grid-like oriented SiC nanowires with visible macroscopic pores. The preparation method of the material is the same as in Example 1. The printing parameters were adjusted so that the printing pitch was 500 μm. After sintering, the porosity of the material is 68.2%, and the compressive strength is 38MPa.

Embodiment 3

[0034] This example mainly introduces a porous silicon carbide ceramic composed of oriented SiC whiskers (with an aspect ratio of 10-50 and a diameter of about 1 μm). The specific preparation method is the same as that of Example 1. The porosity of the material is 53.9%, and the compressive strength is 123MPa.

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Abstract

The invention relates to a light high-strength SiC porous material and a preparation method thereof. The preparation method comprises: extruding a hydrogel slurry containing a SiC one-dimensional nanometer material in a 3D printing mode, and stacking layer by layer to form a billet body; and degreasing and degumming the obtained billet body, placing in a protective atmosphere, and sintering at 1750-2100 DEG C for 1-3 hours to obtain the light high-strength SiC porous material.

Description

technical field [0001] The invention relates to a lightweight and high-strength SiC porous material composed of directional arranged SiC nanowires / whiskers and a preparation method thereof, belonging to the field of preparation of porous ceramic materials. Background technique [0002] Porous silicon carbide ceramics have excellent high temperature strength, high thermal shock resistance, high chemical stability and oxidation resistance, and are widely used in heat insulation materials, catalytic carriers, liquid metals or gas filtration. At present, the traditional methods for preparing porous ceramics mainly include adding pore-forming agents, injection molding, template methods, freeze-drying methods, and foaming methods. For example, the patent of Chinese Publication No. CN101323524A reports a preparation method of oriented alignment porous silicon carbide; the patent of Chinese Application No. 201511032054.7 discloses a method for preparing porous silicon carbide by inj...

Claims

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Application Information

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IPC IPC(8): C04B38/06C04B35/565C04B35/638C04B35/64B33Y10/00B33Y70/10
CPCB33Y10/00B33Y70/00C04B35/565C04B35/638C04B35/64C04B38/067C04B2235/96C04B38/0074
Inventor 胡建宝祝泉董绍明杨金山丁玉生张翔宇阚艳梅
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI