Method for non-destructive controllable preparation of nitrogen vacancy center in diamond
A diamond, non-destructive technology, applied in the field of quantum technology and precision testing materials, to achieve long-term stability of the temperature field, promote the application field, and broaden the application field.
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Embodiment 1
[0043] A method for preparing nitrogen-vacancy centers in diamond without damage and controllable, using the following steps:
[0044] S1: Preparation of diamond single crystals with different content of nitrogen vacancy centers
[0045] (1) Diamond synthesis: Select sulfur to improve the iron-nickel catalyst system, use high-purity flake graphite as the carbon source, and keep it warm for 10 hours at 5.0GPa, 1850°C, and the size of the synthesized high-quality diamond single crystal is 3-5mm;
[0046] (2) Regulate the nitrogen content inside the diamond: Add 0.1wt.% titanium flakes in the catalyst according to the mass ratio to obtain a diamond single crystal with a nitrogen concentration ranging from 0-1 ppm;
[0047] (3) Controllable nitrogen vacancy type: select {100} seeds respectively, control the diamond growth temperature in the range of 1400-1450°C, and obtain the internal N vacancy 2 V-centered {100} crystals;
[0048] S2: Adjust the type of nitrogen hole center in...
Embodiment 2
[0052] A method for preparing nitrogen-vacancy centers in diamond without damage and controllable, using the following steps:
[0053] S1: Preparation of diamond single crystals with different content of nitrogen vacancy centers
[0054] (1) Diamond synthesis: select phosphorus and other non-metallic elements to improve the iron-nickel catalyst system, use high-purity flake graphite as the carbon source, and keep it at 5.0GPa, 1850°C for 10 hours. The size of the synthesized high-quality diamond single crystal is 3-5mm;
[0055] (2) Regulate the nitrogen content inside the diamond: add 0.1 wt.% C to the carbon source according to the mass ratio 3 N 3 (NH 2 ) 3 , to obtain a diamond single crystal with a nitrogen concentration in the range of 200-1000 ppm;
[0056] (3) Controllable nitrogen vacancy type: select {100} seeds respectively, control the diamond growth temperature in the range of 1400-1450°C, and obtain the internal N vacancy 2 V-centered {100} crystals;
[00...
Embodiment 3
[0061] A method for non-damaging and controllable preparation of nitrogen vacancy centers in diamond, characterized in that the following steps are adopted:
[0062] S1: Preparation of diamond single crystals with different content of nitrogen vacancy centers
[0063] (1) Diamond synthesis: select sulfur non-metallic elements to improve the iron-nickel catalyst system, use high-purity flake graphite as the carbon source, and keep it at 6.0GPa, 1550°C for 40 hours, and the size of the synthesized high-quality diamond single crystal is 3 -5mm;
[0064] (2) Regulate the nitrogen content inside the diamond: Add 1wt.% titanium flakes in the catalyst according to the mass ratio to obtain a diamond single crystal with a nitrogen concentration ranging from 0-1 ppm;
[0065] (3) Controllable nitrogen vacancy type: select {100} seeds, control the diamond growth temperature in the range of 1500-1550°C, and obtain the internal NV 0 with NV - Center-dominated {100} crystals;
[0066] S...
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