Method for non-destructive controllable preparation of nitrogen vacancy center in diamond

A diamond, non-destructive technology, applied in the field of quantum technology and precision testing materials, to achieve long-term stability of the temperature field, promote the application field, and broaden the application field.

Active Publication Date: 2020-04-10
QUFU NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at many problems existing in the application of existing diamond N-V centers, the present invention provides a method that can realize the controllable preparation of N-V centers in the diamond growth process, and improves the iron-nickel catalyst by using non-metallic elements such as sulfur, phosphorus, and calcium, and by adding Nitrogen scavenger and non-metallic composite nitrogen so

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  • Method for non-destructive controllable preparation of nitrogen vacancy center in diamond
  • Method for non-destructive controllable preparation of nitrogen vacancy center in diamond
  • Method for non-destructive controllable preparation of nitrogen vacancy center in diamond

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Effect test

Embodiment 1

[0043] A method for preparing nitrogen-vacancy centers in diamond without damage and controllable, using the following steps:

[0044] S1: Preparation of diamond single crystals with different content of nitrogen vacancy centers

[0045] (1) Diamond synthesis: Select sulfur to improve the iron-nickel catalyst system, use high-purity flake graphite as the carbon source, and keep it warm for 10 hours at 5.0GPa, 1850°C, and the size of the synthesized high-quality diamond single crystal is 3-5mm;

[0046] (2) Regulate the nitrogen content inside the diamond: Add 0.1wt.% titanium flakes in the catalyst according to the mass ratio to obtain a diamond single crystal with a nitrogen concentration ranging from 0-1 ppm;

[0047] (3) Controllable nitrogen vacancy type: select {100} seeds respectively, control the diamond growth temperature in the range of 1400-1450°C, and obtain the internal N vacancy 2 V-centered {100} crystals;

[0048] S2: Adjust the type of nitrogen hole center in...

Embodiment 2

[0052] A method for preparing nitrogen-vacancy centers in diamond without damage and controllable, using the following steps:

[0053] S1: Preparation of diamond single crystals with different content of nitrogen vacancy centers

[0054] (1) Diamond synthesis: select phosphorus and other non-metallic elements to improve the iron-nickel catalyst system, use high-purity flake graphite as the carbon source, and keep it at 5.0GPa, 1850°C for 10 hours. The size of the synthesized high-quality diamond single crystal is 3-5mm;

[0055] (2) Regulate the nitrogen content inside the diamond: add 0.1 wt.% C to the carbon source according to the mass ratio 3 N 3 (NH 2 ) 3 , to obtain a diamond single crystal with a nitrogen concentration in the range of 200-1000 ppm;

[0056] (3) Controllable nitrogen vacancy type: select {100} seeds respectively, control the diamond growth temperature in the range of 1400-1450°C, and obtain the internal N vacancy 2 V-centered {100} crystals;

[00...

Embodiment 3

[0061] A method for non-damaging and controllable preparation of nitrogen vacancy centers in diamond, characterized in that the following steps are adopted:

[0062] S1: Preparation of diamond single crystals with different content of nitrogen vacancy centers

[0063] (1) Diamond synthesis: select sulfur non-metallic elements to improve the iron-nickel catalyst system, use high-purity flake graphite as the carbon source, and keep it at 6.0GPa, 1550°C for 40 hours, and the size of the synthesized high-quality diamond single crystal is 3 -5mm;

[0064] (2) Regulate the nitrogen content inside the diamond: Add 1wt.% titanium flakes in the catalyst according to the mass ratio to obtain a diamond single crystal with a nitrogen concentration ranging from 0-1 ppm;

[0065] (3) Controllable nitrogen vacancy type: select {100} seeds, control the diamond growth temperature in the range of 1500-1550°C, and obtain the internal NV 0 with NV - Center-dominated {100} crystals;

[0066] S...

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Abstract

The invention discloses a method for non-destructive controllable preparation of a nitrogen vacancy center in diamond. The ferromagnetic defect in the synthetic diamond is reduced by selecting a non-metal catalyst and a nitrogen source, the content of nitrogen impurities in the synthetic diamond is regulated, the formation type of the nitrogen vacancy in the diamond is accurately controlled by controlling the matching of the growth crystal orientation and the temperature, a high-temperature and high-pressure annealing technology is adopted to quickly and effectively adjust the type of nitrogenvacancies in diamond and the number of carried charges, and controllable NV<0>, NV<->, N2V and other nitrogen vacancy centers are obtained, so that the problem that at present, due to lack of a nitrogen hole controllable preparation technology, further industrial application is seriously limited is effectively solved.

Description

technical field [0001] The invention belongs to the technical field of quantum technology and precision testing materials, and in particular relates to a method for non-damaging and controllable preparation of nitrogen vacancy centers in diamond. Background technique [0002] Quantum technology is an emerging interdisciplinary subject combining quantum theory and information theory. It uses the effects of "quantum superposition" and "quantum entanglement" to store information in "qubits" to achieve ultra-fast parallel computing capabilities. It is used in supercomputing, information processing, Artificial intelligence, information security and other application fields have incomparable advantages over traditional computers. In recent years, as quantum technology has moved from theory to experiment, and successfully developed from laboratory research to practical application, it has broad application prospects in the national economy, science and technology, and military fiel...

Claims

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Application Information

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IPC IPC(8): B01J3/06
CPCB01J3/06
Inventor 刘晓兵陈欣宋京岩李凤娇
Owner QUFU NORMAL UNIV
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