Preparation method of visible-short wave infrared light detection substrate based on oxide/gold nanorod/silicon

A technology of gold nanorods and infrared light, which is applied in the direction of climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of high carrier recombination rate, limited light absorption intensity, and hindering the application of silicon. Achieve the effects of wide spectral response range, maintaining stability, and good detection characteristics

Active Publication Date: 2020-04-10
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high carrier recombination rate and limited light absorption intensity in

Method used

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  • Preparation method of visible-short wave infrared light detection substrate based on oxide/gold nanorod/silicon
  • Preparation method of visible-short wave infrared light detection substrate based on oxide/gold nanorod/silicon
  • Preparation method of visible-short wave infrared light detection substrate based on oxide/gold nanorod/silicon

Examples

Experimental program
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Example Embodiment

[0024] Example 1:

[0025] A visible-short-wave infrared light detection substrate based on oxide / gold nanorods / silicon, through a silver-induced seedless method to synthesize small-sized gold nanorods with different aspect ratios; load them on the surface of the silicon wafer as light The absorption layer is annealed to obtain a tighter bonding gold nanorod / silicon wafer substrate; different oxide films are deposited on the surface of the gold nanorod / silicon wafer substrate to construct a heterojunction structure with good photoelectric response, and finally oxide / Gold nanorods / Si substrate, a new type of visible-shortwave infrared light detection substrate, prepared as follows:

[0026] (1) Synthesis of gold nanorods with different aspect ratios: using the silver-induced seedless method, using the 0.22 M CTAB solution as the growth solution, add 9.12 ml 10 mM HAuCl to 192.49ml 0.22M CTAB solution in turn 4 Solution, 5.4 ml 10 mM AgNO 3 Solution and 22.8 ml of 0.053 M hydroquino...

Example Embodiment

[0032] Example 2:

[0033] A visible-shortwave infrared light detection substrate based on oxide / gold nanorods / silicon, similar to Example 1, is prepared as follows:

[0034] (1) Synthesis of gold nanorods with different aspect ratios: using the silver-induced seedless method, using the 0.22 M CTAB solution as the growth solution, add 9.12 ml 10 mM HAuCl to 192.49ml 0.22M CTAB solution in turn 4 Solution, 0.9 ml 10 mM AgNO 3 Solution, 22.8 ml 0.053 M hydroquinone solution, after the solution becomes colorless, add 18 μl 17.05 mM NaBH to the solution at a stirring rate of 1500 rpm 4 The ice-water mixture solution (0℃) of the solution was continuously stirred for 2 minutes and then allowed to stand at a constant temperature at 30°C for more than 12 hours. The above solution was centrifuged three times under the conditions of 11000 rpm and 15 minutes to remove CTAB from the solution to obtain longitudinal surface plasma. Gold nanorods with excimer absorption peak at 600nm;

[0035] (2) ...

Example Embodiment

[0038] Example 3:

[0039] A visible-shortwave infrared light detection substrate based on oxide / gold nanorods / silicon, similar to Example 1, is prepared as follows:

[0040] (1) Synthesis of gold nanorods with different aspect ratios: using the silver-induced seedless method, using the 0.22 M CTAB solution as the growth solution, add 9.12 ml 10 mM HAuCl to 192.49ml 0.22M CTAB solution in turn 4 Solution, 3.6 ml 10 mM AgNO 3 Solution, 22.8 ml 0.053 M hydroquinone solution, after the solution becomes colorless, add 27.6 μl 17.05 mM NaBH to the solution at a stirring rate of 1000 rpm 4 The solution of ice-water mixture (0℃), keep stirring for 2min, then keep the solution at a constant temperature of 30℃ for more than 12h. Centrifuge the above solution three times under the conditions of 11000 rpm and 15min to remove CTAB in the solution to obtain longitudinal surface plasma Gold nanorods with excimer absorption peak at 850nm;

[0041] (2) The gold nanorods are loaded on the surface of ...

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Abstract

The invention relates to a preparation method of a visible-short wave infrared light detection substrate based on an oxide layer/gold nanorod/silicon. The preparation method comprises the steps of synthesizing the small-size gold nanorods with different length-diameter ratios through a silver-induced seed-free method; loading the small-size gold nanorods on the surface of a silicon wafer to serveas a light absorption layer, and obtaining a gold nanorod/silicon wafer substrate which is more tightly combined through annealing treatment; and depositing different oxide films on the surface of thegold nanorod/silicon composite substrate to construct a heterojunction structure with good photoelectric response, and finally obtaining an oxide/gold nanorod/silicon substrate, namely the novel visible-short wave infrared light detection substrate. The composite substrate can show extremely high detection sensitivity to the visible-short wave infrared light, and compared with the prior art, theobtained detection substrate has the advantages of being wide in spectral response range, high in response sensitivity, adjustable in response wave band, high in anti-interference capacity and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor nanomaterials and photoelectric detection, and in particular relates to a preparation method of a visible-short-wave infrared light detection substrate based on oxide / gold nanorod / silicon. Background technique [0002] In the 21st century, information technology and the Internet have increasingly profound influence on human society. With the support of high-tech technologies such as 5G, big data, and cloud computing, the future is about to enter the era of the Internet of Things and artificial intelligence. higher requirement. When "Moore's Law" is gradually failing, the problems of traditional semiconductor devices such as difficulty in miniaturization, performance bottlenecks, and substantial increase in power consumption are becoming more and more prominent. Therefore, the task of developing new semiconductor devices is imminent. Nanomaterials have become a research hotspot due to their many uniqu...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0352H01L31/109
CPCH01L31/035227H01L31/109H01L31/18Y02P70/50
Inventor 崔大祥白仕亨卢静金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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