TVS protection device based on P-type SOI substrate, and manufacturing method thereof

Abstract

The invention discloses a TVS protection device based on a P-type SOI substrate. According to the device, a P-type SOI substrate silicon wafer is adopted, and is packaged by a metal frame; a P-type SOI substrate comprises a P-substrate, an oxide buried layer and a P-layer from bottom to top, has three ends of an IO end, a VCC end and a grounding end, and can protect the IO signal end and the powersupply VCC end in a circuit at the same time; a first capacitance reducing diode and a second capacitance reducing diode on the P-layer are formed by P-/N-junctions on the front surface; and a main TVS8 pipe is formed by three N+/P-substrate arrays on the back surface. According to the invention, the device is manufactured on the front side and the back side at the same time, so that the layout area of the single device is small so as to easily improve the yield and reduce the cost; the two capacitance reducing diodes have low capacitance values, and completely eliminates the substrate parasitic capacitance, so that the device is suitable for being used in high-frequency interfaces such as HDMI2.0, USB3.0 and other high-speed ports; and large surge current can pass through the TVS pipe onthe back surface.

Description

technical field [0001] The invention relates to the technical field of semiconductor protection devices, in particular to the field of design and manufacture of protection devices in SOI technology. Background technique [0002] The transient voltage suppressor (TVS device) is a clamp overvoltage protection device, which can fix the surge voltage at a relatively low voltage level in a short period of time, so that the back-end integrated circuits are protected from over-surge Voltage shocks to avoid damage. TVS devices are mainly used in various interface circuits, such as mobile phones, tablets, TV sets, and computer hosts. After the voltage enters from the IO terminal of the circuit, it will trigger the TVS device to be turned on preferentially, and the surge current will be released to the ground through the TVS device, clamping the surge voltage at a lower level, thereby protecting the back-end IC device. [0003] For example, the applicant's patent number: 20151088662...

AI Technical Summary

Problems solved by technology

[0005] At present, with the continuous development of integrated circuits IC in the direction of miniaturization, low voltage, and low power consumption, corresponding performance requirements are also put forward for the corresponding TVS protection devices, that is, the clamping voltage of TVS is required to be as low as possible, and the leakage current And capacitance can not be significantly increased, because the increase in leakage current will lead to an increase in the power consumption of the entire circuit. When the capacitance is large, the high-frequency signal is prone to abnormalities in the transmission process.

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