Crystalline silicon battery assembly containing quantum cutting coating and preparation method thereof

A technology of quantum tailoring and crystalline silicon cells, applied in electrical components, circuits, photovoltaic power generation, etc., can solve the problems of silicon solar cell efficiency loss, difficulty in improving the efficiency of crystalline silicon components, and loss of crystalline silicon cell efficiency, so as to improve light energy Conversion efficiency, rich colors, effects suitable for mass production

Inactive Publication Date: 2020-04-17
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, in the market, crystalline silicon solar cell modules still account for at least 85%, but it is difficult to further improve the efficiency of crystalline silicon solar modules
In recent years, perovskite cells and crystalline silicon cells have been developed to make stacked cells. The preparation process is complicated, and there is a certain loss of efficiency for the bottom crystalline silicon cells. The mineral solar cell enters the silicon cell at the bottom and is absorbed by th

Method used

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  • Crystalline silicon battery assembly containing quantum cutting coating and preparation method thereof
  • Crystalline silicon battery assembly containing quantum cutting coating and preparation method thereof
  • Crystalline silicon battery assembly containing quantum cutting coating and preparation method thereof

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Embodiment 1

[0029] Please refer to figure 1 As shown, the first preferred embodiment of the crystalline silicon cell assembly containing the quantum tailoring coating of the present invention includes an upper encapsulating glass 1, an upper encapsulating adhesive film 2, a crystalline silicon assembly 3, and a lower encapsulating adhesive film 4 arranged up and down in sequence. and lower encapsulation glass 5 . The upper encapsulation film 2 is located on the light incident surface side of the crystal silicon component 3 . A quantum tailoring coating 6 is provided between the upper packaging glass 1 and the upper packaging adhesive film 2 . The quantum tailoring layer 6 contains perovskite quantum dot material. The perovskite quantum dot material converts visible light irradiated on the surface of the crystalline silicon component into infrared light that can be absorbed by the crystalline silicon component arranged below it.

Embodiment 2

[0031] Please refer to figure 2 As shown, the second preferred embodiment of the crystalline silicon cell assembly containing the quantum tailoring coating of the present invention includes an upper encapsulating glass 1, an upper encapsulating adhesive film 2, a crystalline silicon assembly 3, and a lower encapsulating adhesive film 4 arranged up and down in sequence. and lower encapsulation glass 5 . The upper encapsulation film 2 is located on the light incident surface side of the crystal silicon component 3 . A quantum tailoring coating 6 is provided between the upper encapsulation film 2 and the crystalline silicon component 3 . The quantum tailoring layer 6 contains perovskite quantum dot material. The perovskite quantum dot material converts visible light irradiated on the surface of the crystalline silicon component into infrared light that can be absorbed by the crystalline silicon component arranged below it.

[0032] In the foregoing embodiment 1 and embodiment...

Embodiment 3

[0038] The first method for preparing a crystalline silicon cell assembly containing a quantum tailoring coating of the present invention comprises the following steps:

[0039] (11) Synthesis of cesium oleate precursor:

[0040]Mix 1g of cesium carbonate, 5mL of oleic acid and 100mL of oleylamine together, stir evenly and heat at 120°C for 30min, vacuumize the reaction system for three consecutive times, change nitrogen, and remove water vapor and Oxygen, react in an inert environment for 10 minutes, until the reaction solution becomes clear, cesium carbonate and oleic acid react completely. It is then stored in an inert environment for subsequent synthesis of quantum dots.

[0041] (12), synthetic cesium lead iodide (CsPbI 3 ) perovskite quantum dot polymer:

[0042] Another 2 g of lead iodide and 100 mL of oleylamine were thoroughly mixed, and the temperature of the reaction system was raised to 120° C. for 1 h. Then nitrogen gas was filled in the reaction system. Then...

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Abstract

The invention relates to a crystalline silicon battery assembly containing a quantum cutting coating. A layer of perovskite quantum dot material with a light down-conversion function is deposited on the surface of the crystalline silicon assembly or the top packaging glass of the crystalline silicon assembly. The absorption visible light (550 nm-560 nm) which cannot be absorbed by the crystallinesilicon assembly is down converted into the infrared light which can be absorbed by the crystalline silicon assembly, so that the absorption of the crystalline silicon assembly to the infrared light is increased, and the energy conversion efficiency of the crystalline silicon assembly is improved by about 10%. The invention further discloses a preparation method of the crystalline silicon batteryassembly containing the quantum cutting coating, and the preparation method is simple in preparation process and suitable for mass production.

Description

technical field [0001] The invention belongs to the technical field of preparation of crystalline silicon solar cells, and in particular relates to a crystalline silicon cell component containing a quantum tailoring coating and a preparation method thereof. Background technique [0002] At present, in the market, crystalline silicon solar cell components still account for at least 85% of the total, but it is difficult to further improve the efficiency of crystalline silicon components. In recent years, perovskite cells and crystalline silicon cells have been developed to make stacked cells. The preparation process is complicated, and there is a certain loss of efficiency for the bottom crystalline silicon cells. The mineral solar cell enters the silicon cell at the bottom and is absorbed by the silicon cell, so the perovskite solar cell on the top must be transparent or translucent, resulting in the loss of the efficiency of the top perovskite solar cell and the bottom silic...

Claims

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Application Information

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IPC IPC(8): H01L31/048H01L31/0216H01L31/18
CPCH01L31/02168H01L31/0481H01L31/18Y02E10/50Y02P70/50
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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