Manufacturing method of active matrix color display device

Abstract

The invention discloses a manufacturing method of an active matrix color display device, which comprises the steps of arranging an active matrix display control module on a substrate and an anode electrode array connected with the active matrix display control module on surface of the substrate; epitaxially growing a semiconductor light-emitting epitaxial layer on a wafer substrate; etching to form a semiconductor light-emitting device array; aligning and combining the semiconductor light-emitting devices of one group of arrays in the semiconductor light-emitting device array with the anode electrodes in the anode electrode array in a one to one manner, and stripping and bonding the wafer substrate and the semiconductor light-emitting devices of one group of arrays through a selective laser pulse scanning technology; repeating the above steps, and sequentially bonding the semiconductor light-emitting device arrays for different primary colors on the anode electrode array in a crossed manner; filling a trench gap between the semiconductor light-emitting devices; and arranging a cathode electrode layer on the surface of the semiconductor light-emitting device array. The utilization rate of the semiconductor light-emitting epitaxial layer is improved by three times through the selective laser scanning technology.

Description

technical field [0001] The embodiments of the present application relate to the display field, and in particular to a method for manufacturing an active matrix color display device. Background technique [0002] At present, more and more attention has been paid to display devices based on the principle that light emitting diodes (Light Emitting Diodes) form pixel units for display, which mainly include organic light emitting diodes (OLEDs), small-pitch LEDs, mini light emitting diodes (Mini LED), micro light emitting diode (Micro LED) and quantum dot light emitting diode (QLED), etc. This type of LED-based display technology has the advantages of self-illumination without backlight, low power consumption, high brightness, long life, and fast response. It can be applied to small and medium-sized display screens such as mobile phones, tablet computers, and wearable devices. Therefore, received widespread attention. [0003] Existing LED display devices are current-driven lig...

AI Technical Summary

Problems solved by technology

However, it is still unable to overcome the inherent defects of the passive driving method: the wiring is complex, easy to crosstalk, and the pixel strobe signal cannot be saved, etc.; in the active driving method, each LED pixel unit has its corresponding independent driving circuit, and the driving current is controlled by the driving transistor. Provide, stronger drive capability can achieve larger area drive, better brightness uniformity and contrast, can achieve low power consumption, high efficiency, high independent controllability and higher resolution, so in large area LED display Active drive is mainly used in the application

With the development of LED miniaturization and matrix technology, it is possible to integrate high-density micro-sized LED arrays on a chip, but the main problems lie in the multiple transfers, full-color, yield and luminescence of nano-scale LEDs. wavelength consistency, etc.

The biggest bottleneck is mass transfer. At present, there are many transfer solutions for mass transfer, including Pick&Place transfer, fluid assembly, laser transfer, and roller transfer. There is a big problem

Moreover, for the mass transfer of color display devices, there will be a large amount of etching technology on the LED material, thus resulting in a lot of reduction in the utilization rate of the LED material.

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