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Slurry and polishing method

A slurry and abrasive technology, applied in grinding devices, grinding machine tools, chemical instruments and methods, etc., can solve problems such as grinding damage

Pending Publication Date: 2020-04-24
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in recent years, in the manufacturing process of semiconductor elements, further miniaturization of wiring is required, and polishing damage generated during polishing has become a problem
That is, when using conventional cerium oxide-based abrasives for polishing, even if slight grinding damage occurs, it will not be a problem as long as the size of the grinding damage is smaller than the conventional wiring width. In the case of miniaturization, even a small amount of grinding damage can become a problem

Method used

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  • Slurry and polishing method
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0200] (Preparation of slurry for cerium oxide polishing)

[0201] [Preparation of slurry for cerium oxide polishing]

[0202] Particles containing cerium oxide (the first particle. Hereinafter referred to as "cerium oxide particles") and an aqueous solution of ammonium dihydrogen phosphate manufactured by Wako Pure Chemical Industries, Ltd. were mixed to prepare a solution containing 5.0% by mass (solid content) Cerium oxide polishing slurry (pH: 5.0) of cerium oxide particles. The mixing amount of ammonium dihydrogen phosphate was adjusted so that the content of ammonium dihydrogen phosphate in the CMP polishing liquid described later became the content in Table 1.

[0203] [Measurement of Average Particle Size]

[0204] An appropriate amount of slurry for polishing cerium oxide was put into Microtrac MT3300EXII, trade name manufactured by Microtrac BEL Co., Ltd., and the average particle diameter (average secondary particle diameter) of the cerium oxide particles was measur...

Embodiment 2 and 3

[0224] Except changing the mixing amount of each component so that the content of ammonium dihydrogen phosphate is the value shown in Table 1, the rest were carried out in the same manner as in Example 1 to prepare a CMP polishing solution.

Embodiment 4 and 5 and comparative example 1～5

[0226] Instead of ammonium dihydrogen phosphate, diammonium hydrogen phosphate (manufactured by Wako Pure Chemical Industries, Ltd.), 1-hydroxyethane-1,1-bis(phosphonate) ammonium (1-hydroxy 25% ammonia water manufactured by Wako Pure Chemical Industries, Ltd. was added to ethane-1,1-bis(phosphonic acid), phosphoric acid (manufactured by Wako Pure Chemical Industries, Ltd.), 1-hydroxyethane-1,1- Bis(phosphonic acid) (manufactured by Wako Pure Chemical Industries, Ltd., trade name: 60% 1-hydroxyethane-1,1-bis(phosphonic acid) solution), polyacrylic acid (manufactured by Wako Pure Chemical Industries, Ltd., trade name : Polyacrylic acid 5000 (weight average molecular weight: 5000)), acetic acid (manufactured by Wako Pure Chemical Industries, Ltd.) or nitric acid (manufactured by Wako Pure Chemical Industries, Ltd.) (refer to Table 1 or Table 2), and adjust the mixing amount of each component A CMP polishing liquid was prepared in the same manner as in Example 1 except that the c...

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Abstract

This slurry contains abrasive grains, a liquid medium, and a salt of a compound represented by expression (1). The abrasive grains include first particles and second particles contacting said first particles. The first particles contain cerium oxide, and the second particles contain a hydroxide of a tetravalent metal element. [In expression (1), R represents a hydroxyl group or a monovalent organic group.]

Description

technical field [0001] The present invention relates to a slurry for polishing and a polishing method. Background technique [0002] In the manufacturing process of semiconductor elements in recent years, the importance of processing technology for increasing density and miniaturization has been increasing. As one of the processing technologies, CMP (chemical mechanical polishing: chemical mechanical polishing) technology is used for the formation of shallow trench isolation (shallow trench isolation. Hereinafter referred to as "STI") in the manufacturing process of semiconductor devices. -metal) insulating material or interlayer insulating material for the planarization of the insulating part, the formation of plugs or buried metal wiring, etc., become an essential technology. [0003] Examples of most commonly used polishing liquids include silica-based polishing liquids containing silica (silicon oxide) particles such as fumed silica and colloidal silica as abrasive grai...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14H01L21/304B24B37/00
CPCB24B37/00C09G1/02H01L21/31053C09K3/1463C09K3/1454B24B37/044H01L21/30625H01L21/31051C09K3/1436
Inventor 松本贵彬岩野友洋长谷川智康
Owner RESONAC CORPORATION