Anti-corrosion method of electrostatic chuck

Abstract

The invention provides an anti-corrosion method of an electrostatic chuck and aims prevent active free radicals from corroding the electrostatic chuck. According to the method, inert gas is introducedinto a channel on the electrostatic chuck. The invention further provides a chamber cleaning method for a plasma processing device. With the method provided by the invention adopted, the problem thatthe adhesion layer of the electrostatic chuck is easily corroded by high-activity free radicals can be effectively solved; the electrostatic chuck can keep a good heat conduction function; and the yield of a manufactured wafer can be obviously improved. A blocking control piece is not needed, and therefore, the process of the method is simple and convenient, and the cost of the method is low; noextra pollution is generated; a protection effect is good; and the service life of a plasma cavity and the service life of the electrostatic chuck can be greatly prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to an anti-corrosion method for an electrostatic chuck and a chamber cleaning method for a plasma processing device. Background technique [0002] In the field of semiconductor manufacturing, Electrode Static Chuck (ESC) carries the wafer (wafer) in the process through high-voltage electrostatic adsorption, and has been widely used in various processes such as lithography, ion implantation, etching, and thin film. middle. [0003] Taking the etching process as an example, its function is to remove the deposited film (the area not covered by the mask layer). During the process, part of the by-products of the reaction to generate polymers will be sucked away by the vacuum system, and part of them will be removed by the vacuum system. It will adhere to the side wall of the processing chamber (chamber). As the number of etched wafers increases, the amount of by-product...

AI Technical Summary

Problems solved by technology

When the adhesive layer is corroded, it will not only cause particle contamination in the chamber, but also cause abnormal heat conduction of the electrostatic chuck, and the instability of the temperature of the electrostatic chuck will cause the critical dimension of the wafer to drift, reducing the yield of the wafer

[0005] In the prior art, a dummy wafer can be used to protect the electrostatic chuck from free radical erosion, but the use of the dummy wafer will increase the manufacturing cost , but also reduces wafer production efficiency

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