Anti-corrosion method of electrostatic chuck

An electrostatic chuck and anti-corrosion technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problems of abnormal heat conduction of electrostatic chucks, lower wafer production efficiency, lower wafer yield, etc., achieve uniform and stable heating, and increase yield , The effect of extending the service life

Active Publication Date: 2020-04-28
CHANGXIN MEMORY TECH INC
View PDF14 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the adhesive layer is corroded, it will not only cause particle contamination in the chamber, but also cause abnormal heat conduction of the electrostatic chuck, and the instability of the temperature of the electrostatic chuck will cause the critical dimension of the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Anti-corrosion method of electrostatic chuck

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0021] In order to make the objects, technical solutions and advantages of the present invention clearer, example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments, however, can be embodied in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0022] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, such as according to the direction of the example described. It will be appreciated ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an anti-corrosion method of an electrostatic chuck and aims prevent active free radicals from corroding the electrostatic chuck. According to the method, inert gas is introducedinto a channel on the electrostatic chuck. The invention further provides a chamber cleaning method for a plasma processing device. With the method provided by the invention adopted, the problem thatthe adhesion layer of the electrostatic chuck is easily corroded by high-activity free radicals can be effectively solved; the electrostatic chuck can keep a good heat conduction function; and the yield of a manufactured wafer can be obviously improved. A blocking control piece is not needed, and therefore, the process of the method is simple and convenient, and the cost of the method is low; noextra pollution is generated; a protection effect is good; and the service life of a plasma cavity and the service life of the electrostatic chuck can be greatly prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to an anti-corrosion method for an electrostatic chuck and a chamber cleaning method for a plasma processing device. Background technique [0002] In the field of semiconductor manufacturing, Electrode Static Chuck (ESC) carries the wafer (wafer) in the process through high-voltage electrostatic adsorption, and has been widely used in various processes such as lithography, ion implantation, etching, and thin film. middle. [0003] Taking the etching process as an example, its function is to remove the deposited film (the area not covered by the mask layer). During the process, part of the by-products of the reaction to generate polymers will be sucked away by the vacuum system, and part of them will be removed by the vacuum system. It will adhere to the side wall of the processing chamber (chamber). As the number of etched wafers increases, the amount of by-product...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01J37/32H01L21/683
CPCH01J37/3244H01J37/32853H01J37/32862H01J37/3288H01J37/32715H01L21/6831
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap