Preparation method of (100) preferred orientation PMN-PZT/PZT heterostructure film

A heterostructure, preferential orientation technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, device material selection, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problem of long preparation cycle, cost Expensive, unfavorable piezoelectric film production and application, etc., to achieve the effect of improving structural inhomogeneity, improving dielectric properties, and improving dielectric and ferroelectric properties

Active Publication Date: 2020-04-28
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to improve the (100) preferred orientation degree, researchers often deposit such as PbO, SrRuO on the substrate first. 3 、LaNiO 3 and other seed layers to guide the PZT film to grow along the (100) crystal direction, but the above method has a long preparation cycle and is expensive, which is not conducive to the actual production and application of piezoelectric films.

Method used

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  • Preparation method of (100) preferred orientation PMN-PZT/PZT heterostructure film
  • Preparation method of (100) preferred orientation PMN-PZT/PZT heterostructure film
  • Preparation method of (100) preferred orientation PMN-PZT/PZT heterostructure film

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Embodiment 1

[0027] This embodiment provides a method for preparing a PMN-PZT / PZT heterostructure thin film (H1) with a heterointerface number of 1, and the specific steps are:

[0028] S101, preparing the lead zirconate titanate seed layer:

[0029] According to the excess of 20% lead element in the seed layer, first dissolve 2.9mL tetrabutyl titanate in 1.6mL acetylacetone, then raise the temperature to 40°C and keep it warm for 1 hour; then add 4.02g zirconium nitrate and 10.51g lead acetate in sequence and 30mL of ethylene glycol methyl ether, fully dissolved and stirred evenly, then heated up to 80°C, and kept warm for 1 hour; then added 1.8mL formamide, stirred well, then cooled down to 40°C, kept warm for 1 hour; finally added 11mL with a mass content of 36% acetic acid solution is kept warm for 1 hour to obtain a lead zirconate titanate seed layer precursor solution with a concentration of about 0.35 mol / L, which satisfies the stoichiometry.

[0030] The above-mentioned lead zirco...

Embodiment 2

[0037] This embodiment provides a method for preparing a PMN-PZT / PZT heterostructure thin film (H3) with a heterointerface number of 3. The specific steps are:

[0038] S201. Prepare the lead zirconate titanate seed layer:

[0039] Dosing according to 20% excess lead element in the seed layer, first dissolve 2.9mL tetrabutyl titanate in 1.9mL acetylacetone, then raise the temperature to 40°C and keep it warm for 1 hour; then add 4.02g of zirconium nitrate and 10.51g of lead acetate in sequence and 30mL of ethylene glycol methyl ether, fully dissolved and stirred evenly, then heated up to 80°C, and kept warm for 1 hour; then added 2.1mL formamide, stirred well, then cooled down to 40°C, kept warm for 1 hour; finally added 11mL with a mass content of 36% acetic acid solution is kept warm for 1 hour to obtain a lead zirconate titanate seed layer precursor solution with a concentration of about 0.35 mol / L, which satisfies the stoichiometry.

[0040] The above-mentioned lead zirco...

Embodiment 3

[0046] This embodiment provides a method for preparing a PMN-PZT / PZT heterostructure thin film (H5) with 5 heterointerfaces. The specific steps are:

[0047] S301. Prepare the lead zirconate titanate seed layer:

[0048] Dosing according to 20% excess lead element in the seed layer, first dissolve 2.9mL tetrabutyl titanate in 1.1mL acetylacetone, then raise the temperature to 40°C and keep it warm for 1 hour; then add 4.02g of zirconium nitrate and 10.51g of lead acetate in sequence and 30mL of ethylene glycol methyl ether, fully dissolved and stirred evenly, then heated up to 80°C, and kept warm for 1 hour; then added 1.5mL formamide, stirred well, then cooled down to 40°C, kept warm for 1 hour; finally added 11mL with a mass content of 36% acetic acid solution is kept warm for 1 hour to obtain a lead zirconate titanate seed layer precursor solution with a concentration of about 0.35 mol / L, which satisfies the stoichiometry.

[0049] The above-mentioned lead zirconate titana...

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Abstract

The invention discloses a preparation method of a (100) preferred orientation PMN-PZT/PZT heterostructure film, and belongs to the field of piezoelectric film material preparation. The method comprises the following steps: 1) preparing a seed layer by adding tetrabutyl titanate into an acetylacetone solution, adding zirconium nitrate and lead acetate after the mixed solution is clarified, then adding ethylene glycol monomethyl ether as a solvent, finally adding formamide as a stabilizer to prepare a seed layer precursor solution, depositing the seed layer precursor solution on a Pt/Ti/SiO2/Sisubstrate, and performing heat treatment to obtain a PZT seed layer; and 2) alternately depositing PZT and PMN-PZT on the seed layer through radio frequency magnetron sputtering to form the PMN-PZT/PZT heterostructure thin film with the odd number of heterogeneous interfaces. By adopting the method provided by the invention, the PMN-PZT/PZT heterostructure thin film with (100) preferred orientation and excellent electrical property can be prepared.

Description

technical field [0001] The invention belongs to the field of piezoelectric material thin film preparation, and relates to a method for preparing a PMN-PZT / PZT heterostructure thin film with (100) preferred orientation. Background technique [0002] Lead zirconate titanate (PZT for short) piezoelectric film belongs to ABO 3 Type perovskite structure compounds have excellent dielectric, piezoelectric and ferroelectric properties, and have been widely used in sensing and detection devices, random storage devices and micromechanical actuators. There are many ways to prepare PZT piezoelectric thin films: such as hydrothermal method, pulsed laser deposition method, metal-organic vapor deposition method, radio frequency magnetron sputtering method and sol-gel method, among which radio frequency magnetron sputtering method has a uniform film surface , Controllable deposition rate, short cycle, less impurities, suitable for large area deposition and many other advantages and widely ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/18H01L41/37C23C14/02C23C14/08C23C14/35
CPCC23C14/088C23C14/08C23C14/352C23C14/024H10N30/852H10N30/092
Inventor 邹赫麟王兴
Owner DALIAN UNIV OF TECH
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