Supercharge Your Innovation With Domain-Expert AI Agents!

Quantum dot material, preparation method and application thereof, and light-emitting device

A technology for quantum dot materials and light-emitting devices, applied in the field of quantum dots, can solve the problems of many surface defects, uneven size, insufficient luminous efficiency, etc., and achieve the effects of uniform square resistance, low square resistance, and improved luminous efficiency.

Active Publication Date: 2020-05-08
深圳市硅光半导体科技有限公司
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, problems such as many surface defects and uneven size have limited its application to a certain extent.
The researchers further found that the doping of metal ions can make quantum dots exhibit a series of more excellent characteristics, for example, Zn 2+ The absorption and fluorescence spectra of In(Zn)P alloy quantum dots formed by doping are blue-shifted, but their luminous efficiency is still insufficient. Therefore, it is necessary to provide a quantum dot material with higher luminous efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot material, preparation method and application thereof, and light-emitting device
  • Quantum dot material, preparation method and application thereof, and light-emitting device
  • Quantum dot material, preparation method and application thereof, and light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A preparation method of sodium-doped indium phosphide quantum dots, specifically comprising the following steps:

[0040] (1) Take 0.1 mmol of anhydrous indium acetate and 0.15 mmol of anhydrous sodium acetate and dissolve them in acetic acid / n-butanol solution (the mass fraction of glacial acetic acid is 50%) to obtain solution 1;

[0041] (2) Disperse tris(trimethylsilyl)-phosphine at a concentration of 10 mmol / L in acetic acid / n-butanol solution (the mass fraction of glacial acetic acid is 50%) to obtain solution 2;

[0042] (3) Drop solution one into solution two under high-speed stirring (400-1000rpm), and then stir at high speed for 2 hours;

[0043] (4) Pour the mixed solution into a microwave reactor, put it into a microwave reactor, and react with microwave at 120° C. for 5 hours;

[0044](5) After cooling, take out the reaction kettle, put it in the vacuum oven, heat it up to 120°C after vacuuming, and after evaporating 3 / 4 of the volume of liquid, pour it ba...

Embodiment 2

[0068] A light-emitting device, the difference from Example 1 is that the obtained nano-silver wire-graphene composite conductive film is cut, the circuit is etched, a solder resist is pasted, and the IC chip and the resistance element are packaged with epoxy resin. Finally, it is laminated with the above-mentioned light-emitting combination layer (hole injection layer, hole transport layer, quantum dot layer, electron injection layer, electron transport layer) and sealed with epoxy resin.

Embodiment 3

[0070] A kind of cesium doped indium phosphide quantum dot, its structural formula is Cs 3 In 2 P 3 .

[0071] The preparation method of the quantum dot material comprises the following steps:

[0072] (1) Take 0.1 mmol of anhydrous indium acetate and 0.15 mmol of anhydrous cesium acetate and dissolve them in 50% acetic acid / n-butanol solution to obtain solution 1;

[0073] (2) Disperse tris(trimethylsilyl)-phosphine in 50% acetic acid / n-butanol solution at a concentration of 10 mmol to obtain solution 2;

[0074] (3) Drop solution one into solution two under high-speed stirring state, and then stir at high speed for 2 hours;

[0075] (4) Pour the mixed solution into a microwave reactor, put it into a microwave reactor, and react with microwave at 120° C. for 5 hours;

[0076] (5) Take out the reaction kettle after cooling, and put it in a vacuum oven, heat it up to 120°C after vacuuming, and after evaporating 3 / 4 of the liquid, pour it back into the ethylene glycol / n-but...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
radiusaaaaaaaaaa
Login to View More

Abstract

The invention discloses an alkali metal doped indium phosphide quantum dot with higher luminous efficiency, a preparation method and application thereof and a luminescent device. The preparation method of the alkali metal doped indium phosphide quantum dot comprises the following steps: dissolving indium acetate and alkali metal acetate into a mixed solution of acetic acid and n-butyl alcohol to obtain a solution I; mixing a phosphorus source with a mixed solution of acetic acid and n-butyl alcohol to obtain a solution II; mixing the solution I and the solution II, and performing microwave reaction to obtain an intermediate product; and purifying and drying the intermediate product to obtain the alkali metal doped indium phosphide quantum dot. The alkali metal doped indium phosphide-basedlight-emitting material with the perovskite structure is obtained by doping the InP quantum dots with the alkali metal elements, and the quantum dot material has ultrahigh light-emitting efficiency and can be used in a light-emitting device.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot material, its preparation method, application and light-emitting device. Background technique [0002] Quantum dot materials can be combined into many kinds of optoelectronic devices, and their properties depend on the composition, shape and size of quantum dot materials, so they have broad application prospects in optoelectronic devices. In order to fully utilize the potential of quantum dot materials, they need to meet the following criteria when used: narrow and symmetrical emission spectrum, high photoluminescence (PL) quantum yield (QY), high optical stability, eco-friendly and low-cost mass production methods. Most of the earliest research on quantum dots focused on materials containing cadmium, mercury or lead elements. However, its toxicity and pollution to the ecological environment cannot be ignored. Therefore, there is a need to try quantum dot pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/70B82Y20/00B82Y30/00H01L51/50H01L51/54
CPCC09K11/70B82Y20/00B82Y30/00H10K50/115
Inventor 余小强姜仕鹏
Owner 深圳市硅光半导体科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com