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Bolometer based on two-dimensional bismuth-oxygen-selenium film and preparation method of bolometer

A technology for measuring bolometer and bismuth oxygen, which is applied in the field of uncooled infrared detectors, and can solve the problem that the temperature coefficient of resistance of bolometer detectors, the low thermoelectric responsivity of bolometer emissivity coefficients, which affect the application of bolometer detectors, and the thermal Due to the low photothermoelectric responsivity of varistor materials, the effects of low electron surface concentration, excellent thermal radiation response performance, and high resistance temperature coefficient are achieved.

Inactive Publication Date: 2020-05-08
东莞烯事达新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the temperature coefficient of resistance of VOx is -2% / K, the temperature coefficient of resistance of Pt and YBCO are -0.39% / K and ~3.4% / K respectively, and the photothermoelectric responsivity of these kinds of thermistor materials are all low , the resistance temperature coefficient, thermal emissivity coefficient and pyroelectric responsivity of the prepared bolometer are relatively low, which affects the application of the bolometer

Method used

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  • Bolometer based on two-dimensional bismuth-oxygen-selenium film and preparation method of bolometer
  • Bolometer based on two-dimensional bismuth-oxygen-selenium film and preparation method of bolometer
  • Bolometer based on two-dimensional bismuth-oxygen-selenium film and preparation method of bolometer

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Effect test

Embodiment 1

[0043] Such as Figure 6 The flow shown is a method for preparing a bolometer based on a two-dimensional bismuth oxide selenide thin film, comprising the following steps:

[0044] 1. Synthesis of two-dimensional bismuth oxyselenium film by chemical vapor deposition method: the precursor Bi containing bismuth and selenium 2 o 3 and Bi 2 Se 3 The molar ratio is 1:1, and it is placed in the upstream end area of ​​the reaction furnace in the airflow direction. Subsequently, the mica substrate was placed 12 cm away from the center of the tube furnace, argon gas was introduced, the system pressure was maintained at 50 Torr, the temperature was raised to 680 ° C, the heating rate was 30 ° C / min, and the temperature was maintained for 60 min. Chemical vapor deposition was carried out. After the completion, the supply of the carrier gas was stopped, the temperature was naturally lowered to room temperature 25° C., and the mica substrate deposited with the bismuth oxyselenide film...

Embodiment 2

[0049] Such as Figure 6 The flow shown is a method for preparing a bolometer based on a two-dimensional bismuth oxide selenide thin film, comprising the following steps:

[0050] 1. Synthesis of two-dimensional bismuth oxyselenium film by chemical vapor deposition method: the precursor Bi containing bismuth and selenium 2 o 3 and Bi 2 Se 3 The molar ratio is 3:1, and it is placed in the upstream end area of ​​the reaction furnace in the gas flow direction. Subsequently, the mica substrate was placed 14 cm away from the center of the tube furnace, nitrogen gas was introduced, the system pressure was maintained at 52 Torr, the temperature was raised to 720 ° C, the heating rate was 35 ° C / min, and the temperature was maintained for 65 min. Chemical vapor deposition was carried out. After completion, the supply of carrier gas was stopped, the temperature was naturally lowered to room temperature 27°C, and the mica substrate deposited with the bismuth oxyselenide film was t...

Embodiment 3

[0055] Such as Figure 6 The flow shown is a method for preparing a bolometer based on a two-dimensional bismuth oxide selenide thin film, comprising the following steps:

[0056] 1. Synthesis of two-dimensional bismuth oxyselenium film by chemical vapor deposition method: the precursor Bi containing bismuth and selenium 2 o 3 and Bi 2 Se 3 The molar ratio is 2:1, and it is placed in the upstream end area of ​​the reaction furnace in the gas flow direction. Subsequently, the mica substrate was placed 10 cm away from the center of the tube furnace, nitrogen gas was introduced, the system pressure was maintained at 48 Torr, the temperature was raised to 640 ° C, the heating rate was 25 ° C / min, and the temperature was maintained for 65 min. Chemical vapor deposition was carried out and the deposition was completed. Afterwards, the supply of the carrier gas was stopped, and the temperature was naturally lowered to room temperature of 23° C., and the mica substrate deposited...

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Abstract

The invention relates to a bolometer based on a two-dimensional bismuth-oxygen-selenium film and a preparation method of the bolometer. The resistance temperature coefficient of the bolometer is -1.6+ / -0.5% / K, the high thermal radiation detection coefficient is -31+ / -0.5 nA / K, the high photo-thermal-electric responsivity is greater than 320 A / W, and a bismuth-oxygen-selenium film is used as a thermistor material.

Description

technical field [0001] The invention relates to an unrefrigerated infrared detector, in particular to a bolometer and a preparation method thereof. Background technique [0002] Infrared detection technology is a technology that uses photoelectric technology to detect infrared specific band signals of thermal radiation of objects, converts optical signals into electrical signals, and then converts them into images and graphics that can be visually distinguished by humans. It is currently used in both military and civilian fields. Wide range of applications. According to Planck's thermal radiation theorem, any object with an absolute temperature greater than absolute zero can radiate electromagnetic waves, and the physical radiation energy intensity is related to the body temperature and the radiation emission capability of the surface. In the military field, any large-scale combat equipment will generate a large amount of thermal radiation when it is working, and the bolome...

Claims

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Application Information

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IPC IPC(8): G01J5/20
CPCG01J5/20G01J2005/0077
Inventor 张学骜杨航张祥喆郑晓明邓楚芸周敏张怡卫月华
Owner 东莞烯事达新材料有限公司
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