Body structure GaAs photoconductive switch based on a graphene interface layer and preparation process thereof

A technology of photoconductive switch and graphene layer, which is applied in the direction of sustainable manufacturing/processing, semiconductor devices, and final product manufacturing. Suppress heat accumulation and eliminate the effect of temperature homogenization

Active Publication Date: 2020-05-08
XI AN JIAOTONG UNIV
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above problems, the present invention provides a bulk structure GaAs photoconductive switch based on a graphene interface layer and its preparation process. At present, most photoconductive switches are produced around the principle of gallium arsenide and multi-layer metal forming ohmic contacts. However, the switching device is faced with short life, uneven heat dissipation, and easy burnout. The present invention transfers high-quality graphene to the target substrate and then coats the surface with metal to form a composite of gallium arsenide-graphene-metal. structure, which has a great effect on the heat dissipation and life of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Body structure GaAs photoconductive switch based on a graphene interface layer and preparation process thereof
  • Body structure GaAs photoconductive switch based on a graphene interface layer and preparation process thereof
  • Body structure GaAs photoconductive switch based on a graphene interface layer and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0089] Choose four-inch crystal orientation The semi-insulating gallium arsenide double polished wafer, with a thickness of 600μm, uses acetone, sulfuric acid and other processes to clean the gallium arsenide surface to remove surface impurities. The device structure diagram is as Figure 1 ~ Figure 2 As shown,

[0090] 1) Preparation of composite structure of CVD graphene and gallium arsenide

[0091] On a Cu foil with a thickness of 25 μm, graphene is grown using a CVD method, and the graphene is transferred to the semi-insulating GaAs surface by a pulling method to obtain the first composite structure.

[0092] 2) Graphicalize the first composite structure:

[0093] The first photolithography (front):

[0094] (1) Apply photoresist AZ-5214 (2) homogenize (3) pre-bake (4) exposure (5) develop (6) post-bake (7) UVO to remove residual glue;

[0095] 3) Then make five layers of metal (front and back) on the surface as electrodes (Ni layer, Ge layer, Au layer, Ni layer and Au layer). Th...

Embodiment 2

[0107] Choose four-inch crystal orientation The gallium arsenide double polished sheet with resistivity ≥10Ωcm and thickness of 600μm. The gallium arsenide surface is cleaned by acetone, sulfuric acid and other processes to remove surface impurities.

[0108] 1) Preparation of composite structure of CVD graphene and gallium arsenide

[0109] On a Cu foil with a thickness of 25 μm, graphene is grown using a CVD method, and the graphene is transferred to the semi-insulating GaAs surface by a pulling method to obtain the first composite structure.

[0110] 2) Graphicalize the first composite structure:

[0111] The first photolithography (front):

[0112] (1) Apply photoresist AZ-5214 (2) homogenize (3) pre-bake (4) expose (5) develop (6) post-bake (7) UVO to remove residual glue;

[0113] 3) Then make five layers of metal (front and back) on the surface as electrodes (Ni layer, Ge layer, Au layer, Ni layer and Au layer). The total thickness of the five layers of metal is 283.5nm;

[0114] ...

Embodiment 3

[0125] Choose four-inch crystal orientation The gallium arsenide double polished sheet with resistivity ≥10Ωcm and thickness of 600μm. The gallium arsenide surface is cleaned by acetone, sulfuric acid and other processes to remove surface impurities.

[0126] 1) Preparation of composite structure of CVD graphene and gallium arsenide

[0127] On a Cu foil with a thickness of 25 μm, graphene is grown using a CVD method, and the graphene is transferred to the semi-insulating GaAs surface by a pulling method to obtain the first composite structure.

[0128] 2) Graphicalize the first composite structure:

[0129] The first photolithography (front):

[0130] (1) Apply photoresist AZ-5214 (2) homogenize (3) pre-bake (4) exposure (5) develop (6) post-bake (7) UVO to remove residual glue;

[0131] 3) Then make five layers of metal (front and back) on the surface as electrodes (Ni layer, Ge layer, Au layer, Ni layer and Au layer). The total thickness of the five layers of metal is 283.5nm;

[0132...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a body structure GaAs photoconductive switch based on a graphene interface layer and a preparation process of the body structure GaAs photoconductive switch. A cathode contactelectrode is arranged on the lower surface of a GaAs substrate, an anode contact electrode is arranged on the upper surface of the GaAs substrate, a graphene layer is arranged between the anode contact electrode and the GaAs substrate, the external electrode is arranged on the upper surface of the anode contact electrode, a light receiving hole penetrates through the external electrode and the anode contact electrode, the upper surface of the GaAs substrate is further covered with a passivation layer, and the anode contact electrode sequentially comprises a Ni layer, a Ge layer, an Au layer, aNi layer and an Au layer from bottom to top. At present, most photoconductive switches are manufactured according to the principle of forming ohmic contact around gallium arsenide and multi-layer metal. However, a switching device faces the phenomena of short service life, uneven heat dissipation, easy burnout and the like, high-quality graphene is transferred to a target substrate, and then thesurface of the target substrate is plated with metal to form a gallium arsenide-graphene-metal composite structure, which plays a great role in heat dissipation and service life of the device.

Description

Technical field [0001] The invention relates to the technical field of a gallium arsenide photoconductive switch, in particular to a bulk structure GaAs photoconductive switch based on a graphene interface layer and a preparation process thereof. Background technique [0002] GaAs photoconductive switches have many advantages, such as simple structure, fast response speed, high voltage resistance, low trigger jitter, high switching accuracy, and can be used in high switching accuracy, THz technology, high-power optical communications, and noisy environments. Electronics and instantaneous electromagnetic wave technology have broad application prospects. They also have important applications in weapons ignition, radar communications, environmental monitoring and other fields. In addition, photoconductive switches are gradually showing important applications in other fields such as biology and medicine. [0003] However, traditional gallium arsenide photoconductive switch devices also...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/024H01L31/108H01L31/18
CPCH01L31/108H01L31/024H01L31/022408H01L31/184Y02P70/50
Inventor 胡龙李昕崔宏旺朱莉刘康孙岳
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap