Wide bandgap power module packaging structure suitable for a severe environment

Abstract

The invention discloses a wide bandgap power module packaging structure suitable for a severe environment. The wide bandgap power module packaging structure comprises a top power substrate, a bottom power substrate, a plurality of power gaskets, a power terminal and an electronic power semiconductor chip, the plurality of power gaskets are arranged between a top conductive metal substrate and a bottom conductive metal substrate; the power terminals comprise an alternating-current power terminal connected with the top conductive metal substrate, and a direct-current power terminal positive electrode and a direct-current power terminal negative electrode which are connected with the bottom conductive metal substrate; adjacent chips are not on the same horizontal plane, and the staggered arrangement mode can greatly reduce the thermal coupling degree among all the chips, so that the thermal coupling degree of all the chips on other chips is more average, and the effect of temperature equalization of all the chips is achieved. Benefited from the advantages of temperature equalization, current equalization and low thermal resistance of the module, the chips can be easily and tightly arranged, so that the size of the power module is reduced, and the cost of a heat dissipation cooling system is reduced.

Description

【Technical field】 [0001] The invention belongs to the technical field of semiconductor packaging, and relates to a packaging structure of a wide bandgap power module suitable for harsh environments. 【Background technique】 [0002] The power module is a module formed by packaging and integrating a series of power electronic power chips according to certain functions. Much better in terms of cost. In recent years, with the continuous development of power electronic devices, the continuous improvement of application environment requirements in important fields such as oil drilling, electric vehicles, and aerospace, and the introduction of energy-saving slogans, power modules are moving toward miniaturization, high power density, and Develop in the direction of high reliability and low loss. In particular, a new generation of wide-bandgap power semiconductors (silicon carbide, gallium nitride, etc.) devices are gradually replacing traditional silicon devices in various industr...

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Problems solved by technology

[0010] 2. Traditional power modules mostly use bonding wires as the interconnection method in electrical connection, which is characterized by one-sided heat transfer. This heat dissipation method is called single-sided heat dissipation, and the heat dissipation efficiency is low. High resistance, which is very unfavorable for the use of power modules in harsh environments; individual commercial power modules have adopted a double-sided heat dissipation structure, but these power modules are packaged and integrated with a small number of chips, which cannot meet the application conditions of high power and high current ;

[0011] 3. Traditional power modules cannot simultaneously achieve temperature and current sharing of power semiconductor chips in parallel, which is crucial in high operating frequency and harsh environments

The uneven temperature of the chip can lead to different failure rates of the adhesive layer of different chips, accelerate the overall failure of the power module, and aggravate the dynamic uneven current phenomenon of parallel chips by affecting the threshold voltage of the chip; the uneven current of the chip is mainly Because the distribution of the parasitic inductance of the parallel branch of the chip is uneven, the uneven distribution of the parasitic inductance will cause the power chip to be subjected to unequal current and voltage stress during the switching transient, and it is very likely that the failure phenomenon of the breakdown power chip will occur

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