Method for manufacturing heterojunction solar cell and heterojunction solar cell

Abstract

The invention relates to a method for manufacturing a heterojunction solar cell and the heterojunction solar cell. Manufacturing the whole heterojunction solar cell in the manufacturing method comprises the following steps of: arranging a central layer; sequentially processing a plurality of top-side light-transmitting conductive layers on the top side of the central layer from the central layer at a plurality of increasing processing temperatures; and sequentially processing a plurality of bottom-side light-transmitting conductive layers on the bottom side of the central layer from the central layer at a plurality of increasing processing temperatures. According to the invention, the plurality of light-transmitting conductive layers are processed at an increasing temperature, such that PNjunctions are not damaged, the passivation effect of the amorphous silicon film layer on the substrate layer is not affected, a low carrier recombination rate and the better P-N junction performanceare obtained, the open-circuit voltage and the filling factor of the cell are improved, and the conversion efficiency of the heterojunction cell piece is further improved.

Description

technical field [0001] The invention relates to the field of energy, in particular to a method for manufacturing a heterojunction solar cell and the heterojunction solar cell. Background technique [0002] With the accelerated consumption of conventional fossil energy such as coal, oil, and natural gas around the world, and the continuous deterioration of the ecological environment, especially the increasingly severe global climate change caused by greenhouse gas emissions, the sustainable development of human society has been seriously threatened. Countries around the world have formulated their own energy development strategies to deal with the limitation of conventional fossil energy resources and the environmental problems brought about by their development and utilization. Solar energy has become one of the most important renewable energy sources due to its reliability, safety, extensiveness, longevity, environmental protection, and resource adequacy, and is expected to...

AI Technical Summary

Problems solved by technology

The technology of using indium tin oxide as the material of the light-transmitting conductive film is relatively mature, and the resistivity of indium tin oxide is relatively low, but the process temperature requires 200°C. Excessively high process temperature will damage the amorphous silicon film layer during the process and further damage it. The performance of the PN junction affects the passivation effect of the amorphous silicon film on the substrate layer, thereby affecting the performance of the battery

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