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Preparation method of high-thermal-conductivity silicon nitride substrate

A technology of silicon nitride substrate and high thermal conductivity, which is applied in the field of ceramic material preparation, can solve the problems of increased production cost, high equipment requirements, and low production efficiency, and achieve the goals of improving thermal conductivity, high sintering activity, and reducing densification temperature Effect

Active Publication Date: 2020-05-19
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This not only requires high equipment and high energy consumption, but also has low production efficiency and increases production costs.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] 1. Weigh 920g of aluminum nitride powder, 50g of yttrium oxide and 30g of magnesia, and the macromolecular organic component is 60wt% polyvinyl butyral, 15wt% polyethylene glycol, 10wt% dibutyl phthalate, 10wt % polyethyleneimine, 5wt% stearic acid;

[0021] 2. Put the weighed raw materials into a grinding tank, add 300g of silicon nitride grinding balls, and mix isopropanol and methyl ethyl ketone binary solvent for 20 hours to obtain a casting slurry with a suitable viscosity;

[0022] 3. Tape-cast the slurry into a green body, then degrease and pre-sinter the green body in nitrogen. The pre-sintering temperature is 1450°C, the pre-sintering time is 3 hours, and the gas flow rate is 1L / min;

[0023] 4. The pre-sintered billet was sintered under pressure in a nitrogen environment, the sintering temperature was 1850°C, the heating rate was 10°C / min, the holding time was 4h, and the nitrogen pressure was 0.9MPa.

[0024] 5. The thermal conductivity of silicon nitride ce...

Embodiment 2

[0026] 1. Weigh 930g of aluminum nitride powder, 50g of yttrium oxide and 20g of magnesia, and the macromolecular organic component is 65wt% polyvinyl butyral, 10wt% polyethylene glycol, 10wt% dibutyl phthalate, 10wt % polyethyleneimine, 5wt% stearic acid;

[0027] 2. Put the weighed raw materials into a grinding tank, add 300g of silicon nitride grinding balls, and mix isopropanol and methyl ethyl ketone binary solvent for 25 hours to obtain a cast slurry with a suitable viscosity;

[0028] 3. Tape-cast the slurry into a green body, then degrease and pre-sinter the green body in nitrogen. The pre-sintering temperature is 1450°C, the pre-sintering time is 3 hours, and the gas flow rate is 1L / min;

[0029] 4. The pre-sintered billet was sintered under pressure in a nitrogen environment, the sintering temperature was 1900°C, the heating rate was 10°C / min, the holding time was 4h, and the nitrogen pressure was 1.2MPa.

[0030] 5. The thermal conductivity of silicon nitride ceram...

Embodiment 3

[0032] 1. Weigh 920g of aluminum nitride powder, 50g of ytterbium oxide and 30g of magnesia, and the polymeric organic components are 60wt% polyvinyl butyral, 15wt% polyethylene glycol, 10wt% dibutyl phthalate, 10wt % polyethyleneimine, 5wt% stearic acid;

[0033] 2. Put the weighed raw materials into a grinding tank, add 300g of silicon nitride grinding balls, and mix isopropanol and methyl ethyl ketone binary solvent for 25 hours to obtain a cast slurry with a suitable viscosity;

[0034] 3. Tape-cast the slurry into a green body, then degrease and pre-sinter the green body in nitrogen. The pre-sintering temperature is 1500°C, the pre-sintering time is 3 hours, and the gas flow rate is 1L / min;

[0035] 4. The pre-sintered billet was sintered under pressure in a nitrogen environment, the sintering temperature was 1900°C, the heating rate was 10°C / min, the holding time was 4h, and the nitrogen pressure was 1.5MPa.

[0036] 5. The thermal conductivity of silicon nitride cerami...

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Abstract

The invention discloses a preparation method of a high-thermal-conductivity silicon nitride substrate, which belongs to the technical field of ceramic material preparation. Silicon nitride powder is adopted as a raw material, rare earth oxide and alkaline earth metal oxide are added to serve as a mixed sintering aid, the adding amount is 6 wt%-10 wt%, a high-molecular compound is added, ball milling and mixing are conducted in an organic solvent, and slurry is formed. Tape casting is carried out to form a green body, presintering of the green body in nitrogen at 1400-1600 DEG C for 1-5 hours is conducted, and heat preservation in an air pressure sintering furnace at 1800-2000 DEG C for 2-10 hours is carried out under the nitrogen pressure of 0.5-3 MPa. The silicon nitride powder used in the invention is high-purity alpha-phase silicon nitride, has very high specific surface area and high sintering activity, and can effectively reduce the densification temperature. The added high-molecular carbon-containing compound is a multi-component compound and is degreased and pre-sintered in an inert atmosphere, so that the thermal conductivity of the product can be improved. The thermal conductivity of the prepared silicon nitride ceramic substrate is not lower than 90 W / m.K, and the bending strength is not lower than 800 MPa.

Description

technical field [0001] The invention belongs to the technical field of ceramic material preparation, and relates to a method for preparing a silicon nitride substrate with high thermal conductivity. Background technique [0002] At present, semiconductor devices are developing toward high power, high frequency, and integration. It is inevitable that devices will generate a lot of heat during operation, which is also the main reason for the failure of semiconductor devices. The thermal conductivity of the insulating substrate is the key to the heat dissipation of the entire semiconductor device, so how to improve the thermal conductivity of the substrate material is very critical. The ceramic substrates currently used in the market are mainly SiC and AlN. SiC ceramics have high thermal conductivity (120-180W / m K), but their dielectric loss is high and their insulation is poor, so their applications are limited; AlN has high thermal conductivity (160-230W / m K). K), but the c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/622C04B35/638C04B35/634C04B35/64C04B35/582
CPCC04B35/581C04B35/584C04B35/622C04B35/6342C04B35/638C04B35/64C04B2235/3206C04B2235/3217C04B2235/3224C04B2235/3225C04B2235/6562C04B2235/6567C04B2235/658C04B2235/96C04B2235/9607
Inventor 王月隆田建军秦明礼吴昊阳贾宝瑞刘昶章林曲选辉
Owner UNIV OF SCI & TECH BEIJING
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