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LED epitaxial structure growth method

A growth method and epitaxial structure technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low growth quality of quantum wells and low radiation recombination efficiency of quantum wells, so as to improve luminous efficiency, improve LED luminous efficiency, The effect of improving crystal quality

Active Publication Date: 2020-06-12
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention solves the problems of low quantum well growth quality and low quantum well radiation recombination efficiency existing in the existing LED epitaxial growth method by adopting a new multi-quantum well layer growth method, thereby improving the luminous efficiency of the LED

Method used

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Embodiment 1

[0043] This embodiment adopts the LED epitaxial structure growth method provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0044] A method for growing an LED epitaxial structure, which sequentially includes: processing a sapphire substrate 1, growing a low-temperature buffer layer GaN2, growing an undoped GaN layer 3, growing a Si-doped N-type GaN layer 4, growing...

Embodiment 2

[0076] Comparative examples are provided below, that is, the growth method of the traditional LED epitaxial structure (for the epitaxial structure, please refer to figure 2 ).

[0077] Step 1: At a temperature of 1000-1100°C and a reaction chamber pressure of 100-300mbar, feed 100-130L / min of H 2 Under the conditions, process the sapphire substrate for 5-10 minutes.

[0078] Step 2: growing a low-temperature GaN buffer layer, and forming irregular small islands in the low-temperature GaN buffer layer 2 .

[0079] Specifically, the step 2 is further as follows:

[0080] At a temperature of 500-600°C and a reaction chamber pressure of 300-600mbar, 10000-20000sccm of NH is introduced 3 , 50-100sccm TMGa, 100-130L / min H 2 Under the condition of , growing the low-temperature GaN buffer layer 2 on the sapphire substrate 1, the thickness of the low-temperature GaN buffer layer 2 is 20-40nm;

[0081] At a temperature of 1000-1100°C and a reaction chamber pressure of 300-600mbar,...

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Abstract

The invention discloses an LED epitaxial structure growth method. The method comprises the following steps in sequence: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electronic barrier layer, and growing a Mg-doped P-type GaN layer, cooling, wherein the stepof growing the multi-quantum well layer sequentially comprises the substeps of growing an AlN transition layer, growing an InGaN well layer, growing a low-temperature AlN layer, growing a high-temperature AlN-1 layer, growing a medium-temperature AlN layer, growing a high-temperature AlN-2 layer and growing a GaN barrier layer. According to the method, the problems of low quantum well growth quality and low quantum well radiation recombination efficiency in the existing LED epitaxial growth method are solved, so that the luminous efficiency of the LED is improved.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to a method for growing an LED epitaxial structure. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When the LED has current flowing, the electrons and holes in the LED recombine in its multiple quantum wells to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low energy consumption, small size, light weight, long life, high reliability and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] The quality of LED epitaxial InGaN / GaN multi-quantum wells prepared by the existing LED multi-quant...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/32H01L33/06
CPCH01L33/0075H01L33/32H01L33/06
Inventor 徐平龚彬彬王杰尹志哲
Owner XIANGNENG HUALEI OPTOELECTRONICS