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High-temperature-resistance and antioxidant infrared low-emissivity composite film and preparation method thereof

A composite film, low emissivity technology, applied in the field of infrared stealth, to achieve the effects of high melting point, simple film production and low cost

Pending Publication Date: 2020-06-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, in view of various problems faced by existing materials at high temperature, the present invention provides a high temperature resistant, oxidation resistant infrared low emissivity composite film and its preparation method. High efficiency and high temperature stability, its preparation method is simple and easy to operate, and the cost is low

Method used

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Embodiment

[0019] Embodiment: A high temperature resistant, anti-oxidation infrared low emissivity composite film is a multi-functional layer superimposed structure, which successively includes a low emissivity functional layer 2, an oxidation protection film 3, and 1 is the surface of the target object; each layer Among them, mechanical bonding is the main bonding method, and the low-emissivity functional layer 2 is ZrB 2 Thin film, oxide protection film 3 is Al 2 o 3 film. The infrared low emissivity composite thin film of this embodiment is deposited on the Si substrate (1).

[0020] In the embodiment, the thickness of the low-emissivity functional layer is 400 nm, and the thickness of the oxidation protection film is 70 nm. The low-emissivity functional layer thickness is prepared by DC magnetron sputtering method, and the target material used is ZrB 2 Target (purity 99.99%), the oxidation protection film adopts radio frequency magnetron sputtering method to prepare, and used tar...

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Abstract

The invention belongs to the technical field of infrared stealth, and particularly relates to a high-temperature-resistance and antioxidant infrared low-emissivity composite film and a preparation method thereof. The high-temperature-resistance and antioxidant infrared low-emissivity composite film is of a double functional layer superposition structure and sequentially comprises a low-emissivityfunctional layer and an oxidation isolation layer from bottom to top; and during using, the lowest layer of the high-temperature-resistance and antioxidant infrared low-emissivity composite film covers the surface of a target object, the low-emissivity functional layer is a high-temperature conductive ceramic film continuously formed, and the oxidation isolation layer is an Al2O3 film. According to the high-temperature-resistance and antioxidant infrared low-emissivity composite film, the emissivity at 8-14 [mu]m is less than 0.1 after being used in 750 DEG C high temperature and aerobic environment for 2 h, the emissivity and high temperature stability are excellent, and the preparation method of the high-temperature-resistance and antioxidant infrared low-emissivity composite film is simple and easy to operate and low in cost.

Description

technical field [0001] The invention belongs to the technical field of infrared stealth, and in particular relates to a composite film with high temperature resistance, oxidation resistance and low infrared emissivity and a preparation method thereof. Background technique [0002] The infrared detector collects the infrared signals of the target in the 3-5um and 8-14um bands, and then uses the difference in infrared radiation energy between the target and the background to identify the target through imaging. According to the Stefan-Boltzmann law, the infrared radiation energy of an object W=εσT 4 (ε is the emissivity of the surface of the object, σ is the Boltzmann constant, and T is the thermodynamic temperature of the surface of the object) It can be seen that reducing the target surface temperature and preparing a low-emissivity composite coating on the high-temperature parts are the key to reducing the target’s reliability. Detective effective measures. [0003] The e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/08C23C14/58
CPCC23C14/067C23C14/081C23C14/35C23C14/5806
Inventor 张丽马晓东张敏殷举航代灵鹭文静翁小龙陆海鹏邓龙江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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