Light-emitting diode with multi-layer buffer layer
A technology of light-emitting diodes and multi-layer buffer layers, which is applied in the directions of electrical components, circuits, semiconductor devices, etc., can solve problems such as affecting the light-emitting quality of light-emitting diodes, and achieve the effect of improving blocking ability and improving light-emitting quality.
Inactive Publication Date: 2020-06-23
XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, the buffer layer in the current light-emitting diode cannot effectively block the defects, so that the defects will extend to the N-type semiconductor layer, the multi-quantum well light-emitting layer and the P-type semiconductor layer, which seriously affects the light-emitting quality of the light-emitting diode.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0029] See figure 1 , figure 1 A schematic structural diagram of a light emitting diode with multiple buffer layers provided by an embodiment of the present invention. An embodiment of the present invention provides a light emitting diode with a multi-layer buffer layer, the light emitting diode comprising:
[0030] substrate layer 11;
[0031] Specifically, the material of the substrate layer 11 may be sapphire, silicon, silicon carbide, zinc oxide, gallium nitride, aluminum nitride or other materials suitable for crystal epitaxial growth.
[0032] The buffer layer 12 is located on the substrate layer 11, wherein the buffer layer 12 includes a first buffer layer 121, a second buffer layer 122 and a third buffer layer 123, the first...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a light-emitting diode with a multi-layer buffer layer. The light-emitting diode comprises a substrate layer, a buffer layer located on the substrate layer, an N-type semiconductor layer located on the buffer layer, an N-type doped layer located on the N-type semiconductor layer, a quantum well light-emitting layer located on the N-type doped layer, an electron blocking layer located on the quantum well light-emitting layer, a P-type doped layer located on the electron blocking layer, and a P-type semiconductor layer located on an unintentional P-type impurity doping layer, wherein the buffer layer comprises a first buffer layer, a second buffer layer and a third buffer layer, and the first buffer layer, the second buffer layer and the third buffer layer are sequentially laminated on the substrate layer. According to the invention, the three-layer buffer layer is grown on the substrate layer, so that the blocking capability of the buffer layer can be greatly improved, defects can be prevented from entering the N-type semiconductor layer, the multi-quantum well light-emitting layer and the P-type semiconductor layer to the greatest extent, and the light emitting quality of the light-emitting diode is improved.
Description
technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a light-emitting diode with multiple buffer layers. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. Due to the advantages of long life, small size, high shock resistance, low heat generation and low power consumption, light emitting diodes have been widely used in home appliances and indicator lights or light sources of various instruments. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] At present, a light-emitting diode generally includes a substrate layer, a buffer layer, an N-type semiconductor layer, a multi-quantum well light-emitting layer, and a P-type semiconductor layer. ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L33/12H01L33/06H01L33/14
CPCH01L33/06H01L33/12H01L33/145
Inventor 李建华李全杰刘向英
Owner XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD