Thin film transistor, manufacturing method and applications

Abstract

A thin film transistor comprises a substrate and a buffer layer arranged on the substrate, wherein the buffer layer comprises n silicon nitride layers and a first silicon oxide layer, the first silicon oxide layer is arranged above the n silicon nitride layers; the adjacent two silicon nitride layers in the n silicon nitride layers have different densities, and n is no smaller than 3. According to the thin film transistor of the invention, through changing a film forming structure and a film forming quality, the buffer layer with the n silicon nitride layers and one silicon oxide layer which are in a stacked structure is formed, the blocking ability of the buffer layer can be enhanced, metal ions in the glass substrate can be effectively prevented from being diffused upwardly, defect centers of a polycrystalline silicon layer is reduced, leakage current is reduced, the quality of the interface of the polycrystalline silicon back face is improved, a current leakage path can be prevented from being formed on the interface of the polycrystalline silicon back face, stability of the polycrystalline silicon layer is enhanced, reliability of the thin film transistor is further improved, and the yield and the quality of a display device are enhanced.

Description

technical field [0001] The present invention relates to the field of semiconductors, and in particular, to a thin film transistor and its manufacturing method and application. Background technique [0002] Organic light-emitting displays (OLEDs) have attracted much attention due to their many advantages, such as self-luminescence, fast response, thinness, low power consumption, and flexible display, and are considered to be the next-generation flat-panel display technology. At present, OLED technology has been gradually applied in various electronic products. Among them, active matrix organic light-emitting display (AMOLED) has the advantages of high image quality, short response time of moving images, low power consumption, wide viewing angle and ultra-light and ultra-thin. Become the main trend of OLED development. [0003] At present, polysilicon thin film transistors are mostly used in AMOLED backplane technology, and polysilicon thin film transistors have the advantage...

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Problems solved by technology

[0006] In the manufacture of polysilicon thin film transistors, there are strict requirements on the content of impurities. The buffer layer of the prior art is not easy to completely block the diffusion of metal ions in the glass substrate. To solve this problem, the thickness of the buffer layer is usually increased to enhance the barrier Ability, but too thick buffer layer is easy to produce too large residual stress and affect the crystallization characteristics

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