Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of zwitterionic polymer pattern on surface of solid substrate

A technology of zwitterion and solid substrate, which is applied in the field of preparation of zwitterionic polymer pattern on the surface of solid substrate, and can solve the problem of not finding zwitterionic polymer and the like

Pending Publication Date: 2020-06-26
QINGDAO UNIV OF SCI & TECH
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although atom transfer radical polymerization has been applied to the production of polymers and for the modification and modification of micro-nano surfaces, it has not been found that the use of atom transfer radical Report on the preparation of zwitterionic polymer micro-nano patterns on the surface of solid substrates, this patent is novel

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of zwitterionic polymer pattern on surface of solid substrate
  • Preparation method of zwitterionic polymer pattern on surface of solid substrate
  • Preparation method of zwitterionic polymer pattern on surface of solid substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Combine figure 1 , image 3 , Figure 4 , Figure 5 , Image 6 with Picture 9 , This embodiment will be described in detail; in this embodiment, gold-plated silicon wafer is selected as the gold substrate, 2-(2-bromoisobutyryloxy)undecyl mercaptan is selected as the initiator of special structure, and [ Preparation of poly[3-(methacrylamide)propyl]dimethyl-(3) on gold surface with 3-(methacrylamide)propyl]dimethyl-(3-propylsulfonic acid)ammonium monomer -Propylsulfonic acid) ammonium zwitterionic polymer pattern and characterization; see the schematic diagram of the preparation process figure 1 .

[0039] (1) Pretreatment of metal substrate

[0040] Soak a 10mm×8mm gold-plated silicon wafer in a lotion prepared by a volume ratio of 3:1 concentrated sulfuric acid and hydrogen peroxide. After soaking for 1 hour, take it out, rinse with deionized water, and blow dry;

[0041] (2) Micro-contact printing on the surface of the metal substrate to obtain the initiator pattern

[0042...

Embodiment 2

[0050] Combine figure 2 , image 3 , Figure 4 , Figure 7 , Figure 8 with Picture 10 ,, to describe this embodiment in detail; in this embodiment, glass flakes are selected as the inorganic non-metal solid substrate, 3-(2-bromoisobutyramido)propyl-triethoxysilane is selected as the initiator, and [ Preparation of poly[3-(methacrylamide)propyl]dimethyl-(3-(methacrylamide)propyl]dimethyl-(3-propylsulfonic acid)ammonium monomer on the surface of glass sheet 3-propyl sulfonic acid) ammonium zwitterionic polymer pattern and characterization; see the schematic diagram of the preparation process figure 2 .

[0051] (1) Pretreatment of solid substrate

[0052] Soak a 10mm×8mm glass piece in a lotion prepared by a volume ratio of 3:1 concentrated sulfuric acid and hydrogen peroxide. After soaking for 1h, take it out, rinse it with deionized water, and blow dry; then put the glass piece into 10mmol Soak in sulfuric acid / L for 30 minutes for acidification, then take it out and blow dr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method of a zwitterionic polymer pattern on the surface of a solid substrate. The preparation method mainly comprises the following steps: cleaning the substrate,grafting an initiator to the substrate, and grafting a zwitterionic polymer to the surface of the substrate through an atom transfer radical polymerization method to obtain a solid surface with a zwitterionic polymer micro-nano pattern. The zwitterionic polymer layer obtained by the method is a zwitterionic polymer modified solid surface prepared by adopting an atom transfer radical polymerizationprinciple; the zwitterionic polymer layer has the advantage of good homogeneity, has organic pollution resistance and biological pollution resistance, and can be used for preventing biological pollution and resisting biological corrosion on the surface of a material.

Description

Technical field [0001] The invention relates to the technical field of material surface chemistry, in particular to a method for preparing zwitterionic polymer patterns on the surface of a solid substrate. Background technique [0002] Zwitterionic polymers are a very important class of macromolecular materials. The scope of such polymers is particularly wide, ranging from naturally occurring biopolymers such as proteins and nucleotides to artificially synthesized tackifiers and soaps. Zwitterionic polymers can be roughly divided into the following two categories, one is betaines: that is, the same monomer unit has both anionic and cationic groups, such as sulfobetaine, carboxybetaine and Phosphate betaine; the second is polyampholyte, also known as alternating block copolymer, that is, on different monomer units with 1:1 positive and negative charges; the chemical structures of these two types of compounds contain the same amount respectively The negative and positive charges m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08F120/58
CPCC08F120/58C08F2438/01
Inventor 李东祥韦倩玲吴春兴陈玉全李春芳
Owner QINGDAO UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products