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A kind of molybdenum aluminum molybdenum and ito/ag/ito compatible etching solution and preparation method

A technology compatible with etching and etching solution, applied in the field of etching solution, can solve the problems of silver layer shrinkage, waste, time-consuming materials, etc., and achieve the effect of smooth side

Active Publication Date: 2021-10-01
JIANGYIN RUNMA ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, different etching solution systems are used for the etching process of the molybdenum-aluminum-molybdenum laminated structure panel and the ITO / Ag / ITO laminated structure panel respectively. When etching panels with different structures, it is necessary to replace the etching solution and clean the etching tank, which is very Time-consuming and material waste; and if molybdenum-aluminum-molybdenum and ITO / Ag / ITO exist on the same panel, they are usually etched in steps, which is inefficient
However, if only a simple mixture of two of the etching solutions is used, the etching angle, etching time and etching precision are difficult to control due to the different reaction rates between the etching solution and the films of each layer and the thickness of the films, thus affecting the uniformity of the etching line and stability
[0005] Therefore, in order to reduce costs, improve etching efficiency, and simplify the process, our company has independently developed molybdenum-aluminum-molybdenum and ITO / Ag / ITO compatible etchant to increase versatility and improve the problem that the current etchant cannot etch the two laminated films compatible , to reduce the problem of large cone angle or even greater than 90°, rough surface, and uneven lines caused by the mismatch of the etching rate of the molybdenum-aluminum-molybdenum laminated film in the etching solution; to improve the silver layer caused by the rapid silver ion etching Shrinkage, ITO layer protruding problem

Method used

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  • A kind of molybdenum aluminum molybdenum and ito/ag/ito compatible etching solution and preparation method
  • A kind of molybdenum aluminum molybdenum and ito/ag/ito compatible etching solution and preparation method
  • A kind of molybdenum aluminum molybdenum and ito/ag/ito compatible etching solution and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Prepare etchant:

[0031] The first step: Weigh by weight percentage, phosphoric acid 65%, nitric acid 5%, acetic acid 20%, monolauryl phosphate 2%, hydroxyethylidene diphosphonic acid 0.5%, compound metal inhibitor 0.5%, wherein molybdenum 0.1% sodium nitrate, 0.1% potassium nitrate, 0.1% mercaptobenzothiazole, 0.1% lauric acid, 0.1% mercaptobenzothiazole, and the rest of water.

[0032] Step 2: Take 1 / 3 of the required pure water, add the weighed molybdate, nitrate, mercaptobenzothiazole, lauric acid and mercaptobenzothiazole into the water in turn, mix and stir, and disperse evenly by ultrasonic oscillation.

[0033] Step 3: Add 1 / 3 of the required amount of pure water to the batching tank, add the required amount of nitric acid under stirring, and mix evenly; 1 / 3 pure water, stir well;

[0034] Step 4: Add lauryl phosphate, hydroxyethylidene diphosphonic acid and the prepared compound metal inhibitor to the mixture obtained in the third step, and stir thoroughly; ...

Embodiment 2

[0037]Preparation of etching solution: Prepare etching solution according to the formula and method of Example 1. The difference from Example 1 is that the compound metal inhibitor is 1.0%, wherein sodium molybdate is 0.2%, potassium nitrate is 0.2%, and mercaptobenzothiazole is 0.2%. %, lauric acid 0.2% and mercaptan benzothiazole 0.2%.

Embodiment 3

[0039] Preparation of etching solution: Prepare etching solution according to the formula and method of Example 1. The difference from Example 1 is that the compound metal inhibitor is 1.5%, wherein sodium molybdate is 0.3%, potassium nitrate is 0.3%, and mercaptobenzothiazole is 0.3%. %, lauric acid 0.3% and mercaptan benzothiazole 0.3%.

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Abstract

The invention discloses a molybdenum-aluminum-molybdenum and ITO / Ag / ITO compatible etching solution and a preparation method thereof. The raw materials of the etching solution include 55-75% of inorganic acid phosphoric acid, 2.5-5% of nitric acid, and 12% of acetic acid. ‑28%, surfactant 1‑8%, compound metal inhibitor 0.1‑5%, protective agent 0.1‑5% and the rest of pure water; the compound metal inhibitor is molybdate, nitric acid A complex mixture of at least two substances of salt, mercaptobenzothiazole, lauric acid and mercaptobenzothiazole; the sum of the weight percentages of each component is 100%. The invention makes the etching rate controllable by adding compound metal inhibitors, effectively inhibits the deterioration of the anti-corrosion protection layer, and obtains a flat and smooth metal film, which has important application value.

Description

technical field [0001] The invention relates to the technical field of etching solution, in particular to a molybdenum-aluminum-molybdenum and ITO / Ag / ITO compatible etching solution and a preparation method. Background technique [0002] In recent years, flexible liquid crystal display products tend to be large-scale, high-quality, and functional. However, the existing LED / OLED has gradually failed to meet the needs of industry development. The resulting AMOLED liquid crystal display technology is characterized by its perfect picture quality, Superior performance and innovation are gaining more and more attention. There are a large number of thin layers on the AMOLED substrate, because the adhesion between aluminum or aluminum alloy and the glass substrate as the base film is not good, and it is easily corroded by acid, alkali and heat in the external environment, so it is necessary to Or the upper and lower parts of the aluminum alloy use molybdenum or molybdenum alloy fil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/06C23F1/26C23F1/20C23F1/30
CPCC09K13/06C23F1/20C23F1/26C23F1/30
Inventor 戈士勇
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
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