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A method of preparation of a GaaS base laser laser

A technology of quantum dots and lasers, applied in the field of preparation of GaAs-based quantum dot lasers, can solve the problems of high threshold and low power, etc.

Active Publication Date: 2021-05-07
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of high threshold and low power of existing quantum well semiconductor lasers, the present invention provides a method for preparing a GaAs-based quantum dot laser with low threshold and stable power

Method used

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preparation example Construction

[0030] A method for preparing a GaAs-based quantum dot laser, comprising:

[0031] a) Put the GaAs substrate into the reaction chamber of the MOCVD equipment, and grow a GaAs buffer layer at a temperature of 300-800°C;

[0032] b) growing a N confinement layer on the GaAs buffer layer at a temperature of 400-800°C;

[0033] c) growing a first N waveguide layer made of undoped GaInP on the N confinement layer at a temperature of 650-800° C., wherein the flow rate of Ga is 12.5 sccm-25 sccm;

[0034] d) maintaining a temperature of 650-800° C., growing a second N-waveguide layer made of undoped GaInP on the first N-waveguide layer, wherein the flow rate of Ga is 25 sccm-37.5 sccm;

[0035] e) maintaining a temperature of 650-800° C., growing a third N-waveguide layer made of undoped GaInP on the second N-waveguide layer, wherein the flow rate of Ga is 12.5 sccm-25 sccm;

[0036] f) growing a quantum dot active region on the third N-waveguide layer at a temperature of 400-600° ...

Embodiment 1

[0045] The thickness of the GaAs buffer layer in step a) is 0.1-0.5um, and the doping source when growing the GaAs buffer layer is Si 2 h 6 , the carrier concentration when growing the GaAs buffer layer is 1E17cm 3 -5E18cm 3 .

Embodiment 2

[0047] In step b), the N confinement layer adopts Al x Ga 1-x Made of InP material, where 0.1≤x≤0.6, the performance of the quantum dot active region is improved by optimizing the value range of x, and the doping source for growing the N confinement layer is Si 2 h 6 , the carrier concentration when growing the N confinement layer is 5E17cm 3 -5E18cm 3 .

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Abstract

A preparation method of a GaAs-based quantum dot laser, by growing the N waveguide layer three times, the Ga input of the first N waveguide layer is increased when the second N waveguide layer is grown, and the third N waveguide layer is grown compared to the second N waveguide layer. When the N waveguide layer is reduced, by growing the P waveguide layer three times, the Ga flux of the second P waveguide layer is increased relative to the growth of the first P waveguide layer, and the growth of the third P waveguide layer is relatively lower than that of the second P waveguide layer. , realize the growth of three layers of GaInP stress buffer layers with different flow rates under the quantum dot active area, and grow three layers of GaInP stress buffer layers with different flow rates above the quantum dot active area to reduce the stress caused by restrictive growth , to provide the best growth conditions for the formation of quantum dots, which is conducive to the formation and aggregation density of quantum dots, and through stress release, the laser power can be increased, the threshold current can be reduced, and the quality of quantum dots can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a preparation method of a GaAs-based quantum dot laser. Background technique [0002] Quantum dots are an important low-dimensional semiconductor material, whose size in three dimensions is not larger than twice the exciton Bohr radius of the corresponding semiconductor material. Quantum dots are generally spherical or quasi-spherical, and their diameters are usually between 2-20nm. Common quantum dots are composed of IV, II-VI, IV-VI or III-V elements. Specific examples include silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, and indium phosphide quantum dots. dots and indium arsenide quantum dots, etc. [0003] Quantum dots are semiconductor nanostructures that bind conduction band electrons,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343
CPCH01S5/343H01S5/3436
Inventor 张雨张新朱振于军
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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