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An ionic liquid covalently bonded immobilized silicon-based material, preparation method and application thereof

An ionic liquid, covalent bonding technology, applied in chemical instruments and methods, other chemical processes, alkali metal compounds, etc., to achieve the effect of being suitable for large-scale production, low price, and good thermal stability

Active Publication Date: 2022-04-01
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the literature and patents on the direct application of radiation grafting technology to ionic liquid bonded silica have not been reported yet.

Method used

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  • An ionic liquid covalently bonded immobilized silicon-based material, preparation method and application thereof
  • An ionic liquid covalently bonded immobilized silicon-based material, preparation method and application thereof
  • An ionic liquid covalently bonded immobilized silicon-based material, preparation method and application thereof

Examples

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preparation example Construction

[0034] A kind of preparation method of ionic liquid immobilized silicon dioxide provided by the invention comprises the following steps:

[0035] (1) Activate the silicon dioxide, add the activated silicon dioxide to the silane coupling agent solution to carry out the alkylation reaction, after the reaction, suction filter and wash the product to obtain the alkylated dioxide silicon;

[0036] (2) carry out surface modification with alkylated silicon dioxide obtained in step (1), introduce the ionic liquid monomer containing unsaturated double bond, make it and alkylated silicon dioxide take place radiation grafting reaction, to product Suction filtration and washing are carried out to obtain the ionic liquid covalently bonded immobilized silicon dioxide material.

[0037] In some embodiments, the silica has a diameter ranging from 0.05 μm to 1000 μm.

[0038] In some embodiments, the ratio of silicon dioxide to the ionic liquid solution in the radiation grafting reaction sys...

Embodiment 1

[0045] A kind of preparation method of ionic liquid immobilized silicon dioxide is as follows:

[0046] The preparation process is as figure 1 As shown, 10g of silica powder was soaked in 20mL of 6M hydrochloric acid for 24h, washed with deionized water until neutral, and dried. Put 10g of the treated silica, 10mL of 3-(methacryloyloxy)propyltrimethoxysilane, and 90mL of toluene in a 250mL flask, stir and reflux at 120°C for 24h, and wash the obtained product with toluene, ethanol, and water respectively , and dried to obtain alkylated silicon dioxide.

[0047] Put 5g of alkylated silicon dioxide into a polyethylene bag and lay it flat, and vacuum seal it, inject 50mL of 30wt% 1-vinyl-3-ethylimidazolium ionic liquid solution with nitrogen deoxygenation and seal it, and pass through the accelerator Radiation grafting was carried out under the beam, the irradiation dose rate was 20kGy / pass, and the absorbed dose was 160kGy. The obtained product was washed with toluene, ethanol...

Embodiment 2

[0049] Research on the relationship between the grafting rate and dose of the radiation grafting method described in Example 1.

[0050] Weigh 1g of alkylated silica respectively, place them in polyethylene bags and vacuum seal them, and inject 10mL of 1-vinyl-3-ethylimidazole with a concentration of 20wt%, 30wt%, and 40wt% into the polyethylene bags respectively The bromide salt ionic liquid was irradiated to a certain dose at a dose rate of 20kGy / pass, and the mass of the product obtained was weighed to calculate the grafting rate.

[0051] figure 2 It is a graph showing the relationship between the grafting rate and the dosage of the ionic liquid immobilized silicon dioxide prepared in the present invention. It can be seen that the grafting rate has an overall trend of increasing with the increase of the absorbed dose and concentration. When the concentration is too high, more homopolymers will be produced during the irradiation process, which will affect the further incr...

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Abstract

The invention discloses an ionic liquid covalently bonded immobilized silicon-based material, a preparation method and its application. By using ionizing radiation technology, grafting and polymerizing an alkylated silicon dioxide substrate into an unsaturated double bond A series of silicon-based adsorption and separation materials containing covalently bonded and immobilized ionic liquids with different structures were obtained. The preparation method involved in the invention has the advantages of simple method, high product efficiency, cheap and easy-to-obtain raw materials, and the like. The silicon-based adsorption material synthesized by this method has good mechanical strength, chemical stability and radiation resistance, and has the advantages of good selectivity to rhenium and technetium, fast adsorption speed, large adsorption capacity, easy regeneration and recyclable use. , has good application prospects in the fields of environmental protection, hydrometallurgy, and nuclear fuel cycle.

Description

technical field [0001] The invention belongs to the preparation method and application of an adsorption material, and more specifically relates to an ionic liquid covalently bonded immobilized silicon-based material, a preparation method and an application thereof. Background technique [0002] With the increasingly serious shortage of fossil energy and environmental pollution, vigorously developing nuclear power has become an important way to solve the problems of energy shortage and environmental pollution. However, while nuclear power plants generate energy, they also generate a large amount of nuclear waste, among which, 99 Technetium is one of the most important nuclides in the long-term disposal of radioactive waste and environmental safety assessment. It has the characteristics of high fission yield, long half-life, and high environmental mobility. contain 99 After the radioactive waste liquid of technetium is buried in the earth, 99 Technetium can easily diffuse i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J20/22B01J20/28B01J20/30G21F9/12C02F1/28C02F103/06
CPCB01J20/103B01J20/22B01J20/28011B01J20/3085C02F1/288G21F9/12C02F2101/006C02F2103/06
Inventor 赵龙谢康俊董珍
Owner HUAZHONG UNIV OF SCI & TECH