Substrate triggered single crystal high temperature alloy directional solidification technology
A high-temperature alloy, directional solidification technology, applied in the direction of self-solidification, single crystal growth, single crystal growth, etc., to eliminate casting defects, eliminate excessive deviation angle, and improve production efficiency
A high-temperature alloy, directional solidification technology, applied in the direction of self-solidification, single crystal growth, single crystal growth, etc., to eliminate casting defects, eliminate excessive deviation angle, and improve production efficiency
CN111364096AActive Publication Date: 2020-07-03SHANGHAI JIAO TONG UNIV
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[0036]In this example, DD5 superalloy is used to prepare a certain type of single crystal turbine blade, the main alloying elements of which are C (0.040-0.060), Cr (6.75-7.25), Co (7.00-8.00), W (4.75-5.25), Al (6.00~6.40), Ta(6.30~6.70), Mo(1.30~1.70), Hf(0.12~0.18), B(0.003~0.005), Re(2.75~3.25), and the rest are nickel.
[0037] The specific implementation steps are as follows:
[0038] (1) Preparation of single crystal substrate materials matching the crystallographic characteristics of single crystal superalloys
[0039] In this embodiment, DD5 alloy is selected as the single crystal substrate material: (a) Since both the single crystal superalloy and the single crystal substrate material use DD5 alloy, the lattices between the two are completely matched, and the lattice mismatch degree is ≤7.8%; (b) The crystal plane of DD5 single crystal base material in contact with the superalloy melt is (001), which belongs to the low-index crystal plane of the face-centered cubic ...
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Abstract
The invention relates to a substrate triggered single crystal high temperature alloy directional solidification technology. The technology comprises the following steps: (1) preparing a single crystalsubstrate material matched with the crystallographic characteristics of a single crystal high temperature alloy; (2) preparing a single crystal substrate chilling plate from the obtained single crystal substrate material; and (3) applying the obtained single crystal substrate chilling plate to directional solidification equipment, and carrying out high temperature alloy smelting and directional solidification preparation to obtain a single crystal high temperature alloy product. Compared with a crystal selection method and a seed crystal + crystal selection method, on the basis of accuratelycontrolling the orientation of the single crystal high-temperature alloy, the overall height of a casting is reduced by eliminating a spiral crystal selector, and the purposes of enhancing axial heatdissipation, improving the temperature gradient of a pasty region and eliminating freckles and mixed crystals near an edge plate are achieved. By means of successful implementation of the technology,the blade preparation quality and the preparation success rate are greatly improved, and the preparation cost of a single crystal high temperature alloy blade is reduced.
Description
technical field [0001] The invention belongs to the field of single crystal superalloy preparation, and in particular relates to a base-triggered single crystal superalloy directional solidification process. Background technique [0002] Since the disappearance of grain boundaries can not only eliminate the potential crack initiation points in the alloy, but also eliminate the high-temperature deformation caused by dislocation slippage, advanced aero-engines almost all use directional solidification to prepare single-crystal turbine blades. At present, directional solidification processes that are widely studied at home and abroad include: High Rate Solidification (HRS), Liquid Melt Cooling (LMC) and Gas Cooling Casting (GCC). (The LMC method and the GCC method are both improvements to the HRS method, replacing the original vacuum radiation heat dissipation with liquid and gas convection heat dissipation, and increasing the temperature gradient at the front of the solid-liqu...
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Patent Timeline
03 Jul 2020
Publication
CN111364096A
- IPC
- C30B11/00; C30B29/52; B22D27/04; C22C19/05
- CPC
- C30B11/00; C30B29/52; B22D27/045; C22C19/057; C30B11/003; C30B11/02; C30B11/14
- Inventors
- 曾龙; 李军