Post-processing method of quantum dot light emitting diode

A quantum dot light-emitting and diode technology, which is applied in the fields of electrical components, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of long post-processing time and insignificant effect on the efficiency of quantum dot light-emitting diode devices, etc.

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a post-processing method for quantum dot light-emitting diodes, which aims to solve the problem that the existing post-processing method of quantum dot light-emitting diodes takes too long and has no obvious effect on improving the efficiency of quantum dot light-emitting diodes.

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  • Post-processing method of quantum dot light emitting diode
  • Post-processing method of quantum dot light emitting diode
  • Post-processing method of quantum dot light emitting diode

Examples

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Embodiment 1

[0041] A post-processing method for quantum dot light-emitting diodes, comprising the following steps:

[0042] Quantum dot light-emitting diodes are provided, and the quantum dot light-emitting diodes include an anode (ITO) and a cathode (metal aluminum electrode) arranged oppositely, a functional stack structure arranged between the anode and the cathode, and the functional stack The structure includes a hole injection layer (PEDOT:PSS), a hole transport layer (TFB), a quantum dot light-emitting layer (CdSe / ZnS QDs), an electron transport layer (ZnO), and an electron injection layer stacked in sequence from the anode to the cathode. layer (LiF), wherein the anode is disposed on a glass substrate.

[0043] The quantum dot light-emitting diode is placed in a magnetic field environment, so that the angle α between the direction of the magnetic field provided by the magnetic field environment and the cathode or between the anode and the anode is 90°, and the magnetic field stren...

Embodiment 2

[0045] A post-processing method for quantum dot light-emitting diodes, comprising the following steps:

[0046] Quantum dot light-emitting diodes are provided, and the quantum dot light-emitting diodes include an anode (ITO) and a cathode (metal aluminum electrode) arranged oppositely, a functional stack structure arranged between the anode and the cathode, and the functional stack The structure includes a hole injection layer (PEDOT:PSS), a hole transport layer (TFB), a quantum dot light-emitting layer (CdSe / ZnS QDs), an electron transport layer (ZnO), and an electron injection layer stacked in sequence from the anode to the cathode. layer (LiF), wherein the anode is disposed on a glass substrate.

[0047] The quantum dot light-emitting diode is placed in a magnetic field environment, so that the angle α between the magnetic field direction provided by the magnetic field environment and the cathode or between the anode changes sinusoidally between 0° and 180°, and the magneti...

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Abstract

The invention provides a post-processing method for a quantum dot light emitting diode. The method comprises the following steps: providing the quantum dot light emitting diode which comprises a cathode and an anode, which are opposite to each other, and a quantum dot light emitting layer disposed between the cathode and the anode; placing the quantum dot light emitting diode in a magnetic field environment with continuously changed magnetic field intensity and magnetic field direction, wherein the absolute value of the magnetic field intensity H is continuously changed in a range of 0 A/m <=H <= 5000A/m, the included angle between the magnetic field direction provided by the magnetic field environment and the plane where the cathode is located or the included angle between the magnetic field direction provided by the magnetic field environment and the plane where the anode is located is alpha, and the inequation of 0<alpha<180(degrees) is satisfied; and performing treatment on the quantum dot light-emitting diode.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a post-processing method of quantum dot light-emitting diodes. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, have three-dimensional dimensions in the nanometer range (1-100nm), and are a kind of nanoparticle theory between bulk materials and molecules. Quantum dots have excellent optical properties such as high quantum yield, large molar extinction coefficient, good photostability, narrow half-peak width, wide excitation spectrum and controllable emission spectrum, and are very suitable as light-emitting materials for light-emitting devices. In recent years, quantum dot fluorescent materials are widely used in the field of flat-panel displays due to their advantages of high light color purity, adjustable luminous color, and long service life, and have become a promising next-generation display and solid-state lighting source. Quantum Dot ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K50/115H10K71/00
Inventor 张节向超宇
Owner TCL CORPORATION
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