Formulations and layers
A preparation and solvent technology, applied in the field of organic electronic devices, can solve problems such as unfavorable long-term stability of OE devices, increasing the complexity and/or cost of OE device manufacturing
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Embodiment 1
[0257] Example 1 relates to the fabrication of OTFT devices involving a passivation formulation of SU-8 polymer in ethyl lactate solvent.
[0258] 10 cm x 10 cm glass substrates (Corning Eagle XG) were cleaned in Deconex (3% w / w in water) using sonication for 20 minutes followed by rinsing in ultrapure water and dried using compressed air. The substrates were baked in a convection oven at 70°C for 30 minutes. The substrate was then spin-coated with a thermally cross-linkable polymer (P11 ) (available to the public from NeuDrive Ltd) as a buffer layer (also called sublayer). After spin-coating, the substrates were first placed on a hot plate at 95°C for 2 minutes for soft baking, and then baked at 150°C for 60 minutes. Measure the final thickness of the P11 layer to be 1 micron.
[0259] After preparing the P11 sublayer, the substrate was sputter coated with 50 nm of Au, and then the source and drain electrodes were prepared using a combination of photolithography and wet etc...
preparation example
[0264] An example of a passivation layer formulation containing 2.5 g of EPON-SU-8 base polymer (i.e. a passivation material comprising a crosslinkable composition comprising polymerized epoxy groups) is provided here. precursor) and 17 g of ethyl lactate. The passivation layer also contained 0.5 g of triarylsulfonium hexafluoroantimonate solution (by mass and 50% solution in propylene carbonate) as a crosslinking agent. That is, the solvent of the passivating formulation contained 17 g of ethyl lactate and 0.25 g of propylene carbonate as co-solvents.
[0265] The formulation of SU-8 and photoinitiator in ethyl lactate was spin-coated at 500 rpm for 10 s, then at 1250 rpm for 30 s, and then baked on a hot plate at 95 °C for 2 min to form a dry film. Check the sample under a microscope to ensure that the solvent of the passivation layer does not affect the OSC / OGI / gate layer. The film layer was then exposed to UV (broadband g, h, I line, exposure 1000 mJ) using a Tamarack ma...
example 2
[0278] Further device test results were obtained using a series of transistor designs with different channel widths, using ethyl lactate as the solvent for the SU8 passivation layer. In this group of devices, the thickness of the organic dielectric layer (OGI) is 300nm, and the etching time of the organic dielectric layer (OGI) and the organic semiconductor layer (OSC) is 60s.
[0279] The results are shown in the table below, and the transfer properties and mobility curves are also shown in the Figure 6C and Figure 6D middle.
[0280]
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