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Gallium nitride growth substrate and preparation method thereof

A growth substrate and gallium nitride technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as film lattice defects and affect the performance of components, and achieve high-quality crystal films and enhanced bonding capabilities , excellent performance

Active Publication Date: 2020-07-17
华厦半导体(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the above-mentioned prior art, the present invention provides a gallium nitride growth substrate and a preparation method thereof, so as to solve the problem that the existing growth substrate has lattice defects in the grown film due to the thermal stress generated by the heterogeneous substrate, thereby affecting the element. Device Performance Issues

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  • Gallium nitride growth substrate and preparation method thereof

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Embodiment 1

[0034] A gallium nitride growth substrate, which is a polycrystalline gallium nitride substrate, a Pt / Ti lattice conversion layer, and an aluminum nitride buffer layer from bottom to top; the gallium nitride growth substrate in this embodiment undergoes the following steps be made of:

[0035] S1: Press GaN polycrystalline powder into a plate shape, and then sinter at 20MPa and 1000°C for 36h to obtain a polycrystalline GaN plate;

[0036] S2: Take a polycrystalline gallium nitride plate, polish it into a substrate with a thickness of about 3mm, perform laser amorphization treatment, grind the surface, and then clean it;

[0037] S3: Deposit a Pt / Ti lattice transformation layer with a thickness of about 100 nm on the substrate by sputtering to obtain a transformation substrate; the preparation of the transformation substrate includes the following steps:

[0038] SS1: Put the cleaned substrate into the sputtering device, install the Pt target and Ti target, and pump the inter...

Embodiment 2

[0042] A gallium nitride growth substrate, which is a polycrystalline gallium nitride substrate, a Pt lattice transformation layer, and a gallium nitride buffer layer from bottom to top; the gallium nitride growth substrate in this embodiment is prepared through the following steps :

[0043] S1: Press GaN polycrystalline powder into a plate shape, and then sinter at 22MPa and 950°C for 48h to obtain a polycrystalline GaN plate;

[0044] S2: Take a polycrystalline gallium nitride plate, polish it into a substrate with a thickness of about 3mm, perform laser amorphization treatment, grind the surface, and then clean it;

[0045] S3: Deposit a Pt lattice conversion layer with a thickness of about 200nm on the substrate by sputtering to obtain a conversion substrate; the preparation of the conversion substrate includes the following steps:

[0046] SS1: Put the cleaned substrate into the sputtering device, install the Pt target, and pump the internal pressure of the sputtering d...

Embodiment 3

[0050] A gallium nitride growth substrate, which is a polycrystalline gallium nitride substrate, a Ti lattice conversion layer, and an aluminum gallium nitride buffer layer from bottom to top; the gallium nitride growth substrate in this embodiment is manufactured through the following steps have to:

[0051] S1: Press GaN polycrystalline powder into a plate shape, and then sinter at 18MPa and 1050°C for 24h to form a polycrystalline GaN plate;

[0052] S2: Take the polycrystalline gallium nitride plate, polish it into a substrate with a thickness of about 1mm, perform laser amorphization treatment, grind the surface, and then clean it;

[0053] S3: Deposit a Ti lattice transformation layer with a thickness of about 100 nm on the substrate by sputtering to obtain a transformation substrate; the preparation of the transformation substrate includes the following steps:

[0054] SS1: Put the cleaned substrate into the sputtering device, install the Ti target, and pump the intern...

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Abstract

The invention discloses a gallium nitride growth substrate and a preparation method thereof. The growth substrate comprises a substrate, a lattice conversion layer and a buffer layer which are stackedlayer by layer, the substrate is a polycrystalline gallium nitride plate, and the lattice conversion layer is Pt and / or Ti and has a hexagonal close-packed structure, and the buffer layer is a hexagonal structure film layer with C-axis orientation. When the growth substrate is prepared, the polycrystalline gallium nitride plate is processed into a base plate with the thickness of 0.5-3 mm, the laser amorphization treatment is carried out on the surface of the base plate, then the Pt and / or Ti lattice conversion layer with the thickness of 20-200 nm is deposited on the base plate, and then thebuffer layer is sputtered, so that the growth substrate is obtained. By adopting the method provided by the invention, the problems of lattice mismatch, thermal mismatch and the like existing in thegrowth of the GaN-based semiconductor material can be effectively solved, so that the cost of the existing GaN-based semiconductor growth substrate is reduced, the efficiency is improved, and meanwhile, the quality of the subsequently grown GaN-based semiconductor material is improved.

Description

technical field [0001] The invention relates to a thin film growth substrate, in particular to a gallium nitride growth substrate and a preparation method thereof. Background technique [0002] The most common substrate for gallium nitride (GaN) growth is sapphire, which has the advantages of good chemical stability, moderate price, and relatively mature manufacturing technology. However, there are also some problems with using sapphire as a substrate, mainly lattice mismatch and thermal stress mismatch, resulting in poor thermal conductivity, and for high-power devices, thermal conductivity is a very important consideration, such as poor heat dissipation, will This will lead to an increase in the temperature of the chip, which will directly affect the life of the device, and even cause performance degradation and failure; and the lattice mismatch will cause lattice defects in the growth of gallium nitride films, which will affect the quality. Contents of the invention ...

Claims

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Application Information

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IPC IPC(8): H01L29/20H01L29/04H01L29/06H01L21/02
CPCH01L21/02389H01L21/02428H01L21/02433H01L21/02458H01L29/04H01L29/0684H01L29/2003
Inventor 谈逊谈谦
Owner 华厦半导体(深圳)有限公司