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Novel three-dimensional silicon structure supercapacitor electrode material and preparation method thereof

A technology for supercapacitors and electrode materials, which is applied in the manufacture of hybrid capacitor electrodes and hybrid/electric double-layer capacitors, etc., can solve the problems of complex preparation steps, complex processes, and high manufacturing costs, and achieve increased collection efficiency and low equivalent internal resistance. , the effect of high specific capacitance

Active Publication Date: 2022-02-08
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, based on this structure, researchers at home and abroad have prepared a series of silicon-based supercapacitors, but the preparation steps are relatively complicated. During the preparation process, CVD, ALD, or high-temperature calcination may be used to passivate the silicon. The surface, the process is more complicated, and the production cost is relatively high

Method used

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  • Novel three-dimensional silicon structure supercapacitor electrode material and preparation method thereof
  • Novel three-dimensional silicon structure supercapacitor electrode material and preparation method thereof
  • Novel three-dimensional silicon structure supercapacitor electrode material and preparation method thereof

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Effect test

Embodiment 1

[0029] (1) Silicon nanowires (SiNWs) were prepared by solution etching, and treated twice to prepare a silicon substrate with a three-dimensional surface structure.

[0030] (a) Select N-type (100 crystal orientation), single-sided polished silicon wafer with a resistivity of 5-7Ω cm, cut into 1cm*2cm samples, wash with ethanol and deionized water for many times; Put it into the etching solution containing 5mol / L and 0.02mol / L silver nitrate and etch for 60min.

[0031] (b) Soak the silicon wafer in a concentrated nitric acid solution for more than 1 hour to remove the residual silver particles on the surface of the silicon nanowires, then fully wash it with deionized water, and dry it at a high speed with a homogenizer.

[0032] (c) The silicon wafer is immersed in a chlorobenzene saturated solution of phosphorus pentachloride for secondary treatment. The treatment time is 3 hours, and the treatment temperature is 120° C.

[0033] (2) Spin-coat 3 layers of PEDOT:PSS solution...

Embodiment 2

[0037] (1) Silicon nanowires (SiNWs) were prepared by solution etching, and treated twice to prepare a silicon substrate with a three-dimensional surface structure.

[0038] (a) Select N-type (100 crystal orientation), single-sided polished silicon wafer with a resistivity of 5-7Ω cm, cut into 1cm*2cm samples, wash with ethanol and deionized water for many times; Put it into the etching solution containing 5mol / L and 0.02mol / L silver nitrate and etch for 60min.

[0039] (b) Soak the silicon wafer in a concentrated nitric acid solution for more than 1 hour to remove the residual silver particles on the surface of the silicon nanowires, then fully wash it with deionized water, and dry it at a high speed with a homogenizer.

[0040] (c) The silicon wafer is immersed in a chlorobenzene saturated solution of phosphorus pentachloride for secondary treatment. The treatment time is 3 hours, and the treatment temperature is 120° C.

[0041] (2) Spin-coat 3 layers of PEDOT:PSS solution...

Embodiment 3

[0047] (1) Silicon nanowires (SiNWs) were prepared by solution etching, and treated twice to prepare a silicon substrate with a three-dimensional surface structure.

[0048] (a) N-type (100 crystal orientation), single-sided polished silicon wafer with a resistivity of 5-7Ω·cm, cut into 1cm*2cm samples, washed with ethanol and deionized water for many times; at room temperature and pressure Put it into the etching solution containing 5mol / L and 0.02mol / L silver nitrate and etch for 60min.

[0049] (b) Soak the silicon wafer in a concentrated nitric acid solution for more than 1 hour to remove the residual silver particles on the surface of the silicon nanowires, then fully wash it with deionized water, and dry it at a high speed with a homogenizer.

[0050] (c) The silicon wafer is immersed in a chlorobenzene saturated solution of phosphorus pentachloride for secondary treatment. The treatment time is 3 hours, and the treatment temperature is 120° C.

[0051] (2) Spin-coat 3 ...

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Abstract

The invention provides a novel three-dimensional silicon structure supercapacitor electrode material and a preparation method thereof. The three-dimensional silicon structure is used as a base, an active layer is prepared on its surface, and a charge collection layer is covered on the surface of the active layer; the two-dimensional conductive material of the charge collection layer As the main body, the conductive polymer is used as the binder, and a porous network charge collection layer with high conductivity is prepared on the surface of the active layer. When preparing a large-area electrode material, in order to increase the charge collection efficiency, the metal gate electrode material is evaporated on the surface of the high-conductivity layer. The three-dimensional silicon structure electrode material prepared by the method does not need to consider the conductivity, purity and crystal form of the silicon substrate, and does not need to passivate the silicon surface, which reduces the raw material cost of the silicon electrode material and simplifies the preparation method of the silicon electrode.

Description

technical field [0001] The invention belongs to the field of electrode materials, and relates to a novel three-dimensional silicon structure supercapacitor electrode material and a preparation method thereof. Background technique [0002] From aeronautics to biomedicine, the emergence of innovative miniature portable devices, such as wireless microsensors or biomedical implantable microdevices, has aroused great interest in the field of energy storage devices. The technical specifications of such micro-devices require high-performance small-sized power supplies, including high power density and energy density, as well as long life and good compatibility with the microelectronics industry. As the second most abundant element on earth, silicon is the most thoroughly studied element among all chemical elements. At the same time, most semiconductor components are prepared from silicon. Silicon materials are used in optoelectronics, microelectronics and other industries occupy a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/24H01G11/26H01G11/46H01G11/48H01G11/86
CPCH01G11/24H01G11/26H01G11/46H01G11/86H01G11/48Y02E60/13
Inventor 申小娟张旋朱脉勇李松军
Owner JIANGSU UNIV
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