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LED epitaxial wafer growing on Si substrate and preparation method of LED epitaxial wafer

A technology of LED epitaxial wafers and substrates, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high LED manufacturing cost, high price, expensive sapphire and SiC substrates, etc., to reduce defect density and improve performance , reducing the effect of upward extension

Pending Publication Date: 2020-08-28
宜兴曲荣光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the luminous efficiency of LED has surpassed that of fluorescent lamps and incandescent lamps, the luminous efficiency of commercial LEDs is still lower than that of sodium lamps (150lm / W), and the price per lumen / watt is relatively high.
At present, most GaN-based LEDs are based on epitaxial growth on sapphire and SiC substrates. Large-scale sapphire and SiC substrates are expensive, resulting in high LED manufacturing costs.

Method used

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  • LED epitaxial wafer growing on Si substrate and preparation method of LED epitaxial wafer
  • LED epitaxial wafer growing on Si substrate and preparation method of LED epitaxial wafer
  • LED epitaxial wafer growing on Si substrate and preparation method of LED epitaxial wafer

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preparation example Construction

[0052] A method for preparing an LED epitaxial wafer grown on a Si substrate, characterized in that it comprises the following steps:

[0053] Substrate selection step: select Si substrate 10;

[0054] AlN buffer layer 11 growth step: growing AlN buffer layer 11 on Si substrate 10;

[0055] Epitaxial growth step of the first GaN buffer layer 12: epitaxially growing the first GaN buffer layer 12 on the AlN buffer layer 11;

[0056] The epitaxial growth step of the second GaN buffer layer 13: etching the first GaN buffer layer 12, and etching the first grooves arranged in an array on the upper part of the first GaN buffer layer 12; 12 grows a second GaN buffer layer 13, and the lower part of the second GaN buffer layer 13 is deposited in the first trench;

[0057] The step of epitaxial growth of the non-doped GaN layer 14: etching the second GaN buffer layer 13, and etching the second groove arranged in an array on the upper part of the second GaN buffer layer 13, the first gr...

Embodiment 1

[0075] Such as Figure 1-2 As shown, the LED epitaxial wafer grown on the Si substrate in this embodiment includes the AlN buffer layer 11 grown on the Si substrate 10, the first GaN buffer layer 12 grown on the AlN buffer layer 11, and the first GaN buffer layer 12 grown on the A second GaN buffer layer 13 on the GaN buffer layer 12, an undoped GaN layer 1414 grown on the second GaN buffer layer 13, an n-type doped GaN layer 15 grown on the undoped GaN layer 14, grown An InGaN / GaN quantum well 16 on the n-type doped GaN layer 15 , an electron blocking layer 17 grown on the InGaN / GaN quantum well 16 , and a p-type doped GaN film 18 grown on the electron blocking layer 17 .

[0076] The preparation method of the LED epitaxial wafer grown on the Si substrate of the present embodiment comprises the following steps:

[0077] (1) Selection of substrate: use Si(111) crystal orientation substrate;

[0078] (2) Growth of the AlN buffer layer 11: the AlN buffer layer 11 is grown by m...

Embodiment 2

[0089] The LED epitaxial wafer grown on the Si substrate of this embodiment includes an AlN buffer layer 11 grown on the Si substrate 10, a first GaN buffer layer 12 grown on the AlN buffer layer 11, and a first GaN buffer layer grown on the first GaN buffer layer. The second GaN buffer layer 13 on the layer 12, the non-doped GaN layer 1414 grown on the second GaN buffer layer 13, the n-type doped GaN layer 15 grown on the non-doped GaN layer 14, grown on the n-type An InGaN / GaN quantum well 16 on the doped GaN layer 15 , an electron blocking layer 17 grown on the InGaN / GaN quantum well 16 , and a p-type doped GaN film 18 grown on the electron blocking layer 17 .

[0090] The preparation method of the LED epitaxial wafer grown on the Si substrate of the present embodiment comprises the following steps:

[0091] (1) Selection of substrate: use Si(111) crystal orientation substrate;

[0092] (2) Growth of the AlN buffer layer 11: the AlN buffer layer 11 is grown by magnetron sp...

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Abstract

The invention discloses an LED epitaxial wafer growing on a Si substrate and a preparation method of the LED epitaxial wafer, wherein the AlN buffer layer, the first GaN buffer layer, the second GaN buffer layer, the non-doped GaN layer, the n-type doped GaN layer, the InGaN / GaN quantum well, the electron blocking layer and the p-type doped GaN thin film sequentially grow on the Si substrate; first grooves distributed in an array mode are formed in the upper portion of the first GaN buffer layer, wherein the lower part of the second GaN buffer layer is deposited in the first trench, and secondtrenches arranged in an array are formed in the upper part of the second GaN buffer layer; wherein the first groove and the second groove are not overlapped in the vertical direction; the lower portion of the non-doped GaN layer is deposited in the second trench. The LED epitaxial wafer grown on the Si substrate provided by the invention is low in defect density, good in crystallization quality and good in electrical and optical properties, the transverse epitaxy of GaN is increased through multiple times of etching, and dislocation is effectively prevented from extending upwards.

Description

technical field [0001] The invention relates to the technical field of LED epitaxial wafers, in particular to an LED epitaxial wafer grown on a Si substrate and a preparation method thereof. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lighting, the appl...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/12H01L33/00
CPCH01L33/007H01L33/12H01L33/20
Inventor 高芳亮
Owner 宜兴曲荣光电科技有限公司
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