Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Piezoresistor adopting silicon rubber insulating layer, and manufacturing method thereof

A silicon rubber insulating layer and varistor technology, applied in varistors, overvoltage protection resistors, resistors, etc., can solve the problems of poor resistance to high and low temperature impact, achieve long service life, avoid dust pollution, Improve the effect of withstanding high current impact

Active Publication Date: 2020-09-25
CHENGDU TIEDA ELECTRONICS CORP
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems of poor high and low temperature impact resistance existing in the above-mentioned existing insulating layer materials, and easy expansion, cracking, and falling off when impacted by high-energy-density lightning wave surge current at high temperature, the problem that the insulation performance is affected, the present invention provides a silicone rubber The varistor of the insulating layer and its manufacturing method can have better impact resistance after material modification through its characteristics of higher elasticity and higher adhesion, and have better tensile strength at the same time. Cracks and falls off easily

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Piezoresistor adopting silicon rubber insulating layer, and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] This embodiment specifically discloses a formula of insulating silicone rubber, which is an insulating material specially used for piezoresistors.

[0037] Since the varistor is mainly composed of a pressure-sensitive ceramic chip, pins and packaging layer, and the main function of the packaging layer is to isolate it from the external environment, to prevent moisture, dust particles and other pollutants from contaminating the chip, while the packaging layer It has extremely high insulation ability and adhesive force, and can avoid serious damage to ceramic chips caused by arc flashover when the voltage is too high.

[0038]The encapsulation layer in the prior art is a multi-material wrapping structure, because the role of the encapsulation layer is particularly important, especially in the case of high and low temperature cycle shocks, the stress caused by the different thermal expansion coefficients of various materials will directly act on the encapsulation layer, if ...

Embodiment 2

[0054] In this embodiment, a varistor is provided, which includes a cylindrical varistor ceramic body and pins arranged on the circular surfaces at both ends of the varistor ceramic body, and is wrapped with a soft silicone rubber layer for For sealing and insulation.

[0055] The soft silicone rubber layer is adjusted by a special formula, so that it has better high and low temperature impact resistance. The specific formula is as follows:

[0056] Hexamethyldisiloxane 5%

[0057] Ethyl orthosilicate 3%

[0058] Ethyl polysilicate 2%

[0059] Phenyl Silica Gel························· 25%

[0060] Hydroxy silicone oil 30%

[0061] Nitrogen Flame Retardant······························ 10%

[0062] Phosphorus Flame Retardant······························ 10%

[0063] Thixotropic agent······························ 10%

[0064] Curing agent 5%

[0065] Among them, the resin product is obtained by kneading the hexamethyldisiloxane, tetraethyl orthosilicate and polyethyl ...

Embodiment 3

[0068] In this embodiment, a varistor is provided, which includes a cylindrical varistor ceramic body and pins arranged on the circular surfaces at both ends of the varistor ceramic body, and is wrapped with a soft silicone rubber layer for For sealing and insulation.

[0069] The soft silicone rubber layer is adjusted by a special formula, so that it has better high and low temperature impact resistance. The specific formula is as follows:

[0070] Hexamethyldisiloxane···························· 5%

[0071] Ethyl orthosilicate 3%

[0072] Polyethylsilicate····························· 2%

[0073] Phenyl Silica Gel······························ 25%

[0074] Hydroxy silicone oil 30%

[0075] Nitrogen Flame Retardant··························· 10%

[0076] Phosphorus Flame Retardant··························· 10%

[0077] Thixotropic agent······························· 10%

[0078] Curing agent····························· 3%

[0079] Photosensitive color powder (titan...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a piezoresistor adopting a silicone rubber insulating layer, and a manufacturing method of the piezoresistor. The piezoresistor comprises a piezoresistor porcelain body and twoend surface electrode pins of the piezoresistor porcelain body, and also comprises a soft silicone rubber layer which wraps the piezoresistor porcelain body and the pins to form insulation protection, wherein the pins penetrate out of the soft silicon rubber layer to be connected with external equipment. The invention also discloses a manufacturing method, which comprises the following steps of:arranging the two pins on the two end surfaces of the piezoresistor porcelain body respectively, soaking the piezoresistor porcelain body connected with the pins in the liquid-state raw material of the soft silicone rubber layer, taking out the piezoresistor porcelain body after dip-coating 1-3 times, curing the piezoresistor porcelain body at normal temperature, testing the performance of the piezoresistor porcelain body after curing, and obtaining a finished product after the piezoresistor porcelain body is qualified. According to the invention, the method is different from the existing silicone rubber technology, and the special formula solves the problem of binding force between the pressure-sensitive ceramic and the silica gel, and enhances the high-density lightning surge high-current impact resistance of the product, especially the high-density lightning surge high-current impact resistance at high temperature.

Description

technical field [0001] The invention belongs to the technical field of insulating or dielectric materials, and in particular relates to a varistor using a silicon rubber insulating layer and a manufacturing method thereof. Background technique [0002] The varistor is a resistance device with nonlinear volt-ampere characteristics, which is mainly used in circuits to absorb line surges for protection purposes. It mainly forms a diode effect through the internal ceramic block composed of zinc oxide particles and a small amount of other metal oxides or polymers. When encountering high voltage, it will reversely collapse due to hot electrons and tunneling effects, and the flow rate is large. Current, the main index is determined by the specified lightning wave surge current. [0003] The ceramic block structure is usually covered and bonded by a layer of insulating material, so as to form an isolation protection for the internal material and prevent the surge from arcing from t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01C1/034H01C1/04H01C7/12H01C17/02C08L83/04C08L83/02C08K13/04C08K13/02C08K5/5419C08K5/5415C08K3/22C08K7/26C08K3/34
CPCH01C1/034H01C1/04H01C7/12H01C17/02C08L83/04C08K2003/2241C08L2205/03C08L2205/025C08L83/02C08K13/04C08K13/02C08K5/5419C08K5/5415C08K3/22C08K7/26C08K3/346
Inventor 张治成石小龙叶磊詹俊鹄章俊
Owner CHENGDU TIEDA ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com