Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Short-wavelength deep ultraviolet LED epitaxial structure and P-type layer material, preparation method and application thereof

A technology of epitaxial structure and layer materials, applied in electrical components, nanotechnology, circuits, etc., can solve the problem of restricting the luminous efficiency and application prospects of deep ultraviolet LEDs, restricting the luminous efficiency of short-wavelength deep ultraviolet LED devices, and deteriorating p-AlGaN thin film materials Crystal quality and other issues, to achieve the effect of improving current congestion, improving activation efficiency, and uniform distribution of lateral current

Inactive Publication Date: 2020-09-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although ultraviolet LEDs have broad market prospects and huge added value, the MOCVD manufacturing method of traditional LED structure P-type layer materials seriously restricts the luminous efficiency and application prospects of deep ultraviolet LEDs. Doped with Mg to obtain a single-layer P-type AlGaN material (p-AlGaN), and as the LED light-emitting wavelength extends to the deep ultraviolet band, the P-AlGaN with low Al composition will absorb the outgoing light of the quantum well, which is not conducive to deep ultraviolet LED The surface of the device emits light, so P-AlGaN needs to use a higher Al composition than the quantum well light-emitting layer, but a higher Al composition will cause higher density cracks and dislocations due to lattice mismatch, and will also increase Mg activation energy and reduce the doping efficiency of Mg, making it difficult to obtain a high hole carrier concentration for P-AlGaN materials, which ultimately restricts the luminous efficiency of deep ultraviolet LEDs
The study found that although a higher hole carrier concentration can be obtained by increasing the Mg doping concentration, the high concentration of Mg doping will also deteriorate the crystal quality of the p-AlGaN thin film material
Therefore, the above-mentioned problems of using single-layer p-AlGaN as the p-type layer material are important factors restricting the luminous efficiency of short-wavelength deep ultraviolet LED devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Short-wavelength deep ultraviolet LED epitaxial structure and P-type layer material, preparation method and application thereof
  • Short-wavelength deep ultraviolet LED epitaxial structure and P-type layer material, preparation method and application thereof
  • Short-wavelength deep ultraviolet LED epitaxial structure and P-type layer material, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Example 1: 355nm UV LED structure

[0033] Step 1: First, set the pressure of the reaction chamber of the MOCVD system to 400mbar, at H 2 The c-plane sapphire substrate was baked at a high temperature at 1100°C and then cooled to 520°C to grow a 25nm thick GaN buffer nucleation layer, then raised to 1080°C for annealing and recrystallization, and then raised to 1140°C to grow a 2μm GaN support layer.

[0034] Step 2: Reduce the pressure in the reaction chamber to 80mbar and grow 550nm n-AlGaN, where the flow rates of TMGa and TMAl are set to 110 and 131μmol / min, respectively, and the effective Si doping concentration is 6sccm. Then turn off the Si doping source and continue to grow 50nm non- AlGaN is deliberately doped.

[0035] Step 3: Raise temperature to 1150℃ to grow GaN / Al for 5 cycles 0.1 Ga 0.9 N multiple quantum well structure, in which the GaN potential well layer TMGa flow rate is set to 110μmol / min, the Si effective doping concentration is 0.5sccm; the AlGaN barrier...

Embodiment 2

[0039] Embodiment 2: 310nm ultraviolet LED structure

[0040] Step 1: First set the pressure in the reaction chamber of the MOCVD system to 400mbar, bake the c-plane sapphire substrate at a high temperature of 1100°C in an H2 environment, then cool to 520°C to grow a 25nm thick GaN buffer nucleation layer, and then heat to 1080°C. Annealing is recrystallized, and then the temperature is raised to 1140°C to grow a 2μm GaN support layer.

[0041] Step 2: The reaction chamber is heated to 1160°C, the pressure is reduced to 80mbar, and a 550nm AlGaN insertion layer is grown. The flow rates of TMGa and TMAl are set to 110 and 392μmol / min, respectively. 3 The flow rate is 8000 sccm, the effective Si doping concentration is 6 sccm, and then the Si doping source is turned off, and the unintentionally doped AlGaN is grown by 50 nm.

[0042] Step 3: Increase the temperature to 1165℃ and grow Al for 5 cycles 0.1 Ga 0.9 N / Al 0.15 Ga 0.85 N multiple quantum well structure. Among them, Al 0.1 Ga ...

Embodiment 3

[0046] Embodiment 3: 280nm ultraviolet LED structure

[0047] Step 1: First, set the pressure of the reaction chamber of the MOCVD system to 400mbar, at H 2 The c-plane sapphire substrate was baked at a high temperature at 1100°C and then cooled to 520°C to grow a 25nm thick GaN buffer nucleation layer, then raised to 1080°C for annealing and recrystallization, and then raised to 1140°C to grow a 2μm GaN support layer.

[0048] Step 2: The pressure in the reaction chamber is reduced to 80mbar, and a 550nm AlGaN insertion layer is grown. The flow rates of TMGa and TMAl are set to 66 and 269μmol / min, respectively. 3 The flow rate is 8000 sccm, the effective Si doping concentration is 6 sccm, and then the Si doping source is turned off, and the unintentionally doped AlGaN of 50 nm is continued to grow.

[0049] Step 3: Increase the temperature to 1150℃ to grow Al for 5 cycles 0.3 Ga 0.7 N / Al 0.4 Ga 0.6 N multiple quantum well structure, Al 0.3 Ga 0.7 The flow rates of the N well layer TM...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a short-wavelength deep ultraviolet LED epitaxial structure and a P-type layer material, a preparation method and an application thereof. The P-type layer material has an AlxGa1-xN / AlyGa1-yN superlattice structure, wherein the AlxGa1-xN / AlyGa1-yN superlattice structure comprises an AlxGa1-xN barrier layer and an AlyGa1-yN potential well layer, wherein x>y, 0<x<=1, and 0<=y<1. According to the invention, the alloy proportion parameters x and y of the metal Al element of the barrier layer and the potential well layer of the superlattice structure can be flexibly adjustedaccording to the requirement of the change of the light-emitting wavelength of the deep ultraviolet LED, and the light transmission performance of the P-type material and the improvement of the hole carrier concentration can be considered at the same time.

Description

Technical field [0001] The invention relates to a gallium nitride (GaN)-based group III nitride film material and a short-wavelength ultraviolet LED structure P-type layer material epitaxial preparation process, in particular to a short-wavelength deep ultraviolet LED epitaxial structure, its P-type layer material and a manufacturing method And applications belong to the field of semiconductor technology. Background technique [0002] In recent years, the growth rate of the LED lighting industry, known as the new generation of light sources, has slowed down. It is undergoing industrial transformation and fission. More and more new technologies related to LED lighting have attracted the attention of the industry, such as visible light communication and infrared LED and ultraviolet (Ultra-Violet: UV) LED, etc. Among them, UV LEDs are accelerating their expansion in civil and industrial applications due to their safety and environmental protection, high efficiency, low energy consu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/02H01L33/14H01L33/00B82Y40/00
CPCB82Y40/00H01L33/007H01L33/025H01L33/04H01L33/14H01L33/00H01L33/02H01L33/06
Inventor 徐峰于国浩邓旭光张丽张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com