Preparation method of silicon carbide coated diamond composite material, and diamond/aluminum composite material

Abstract

The invention relates to a preparation method of a silicon carbide coated diamond composite material and a diamond / aluminum composite material. A silicon carbide coating is synthesized on the surfaceof diamond through a chemical reaction under the condition of low0 temperature that is 1000 DEG C or below for the first time. The preparation method comprises the following steps: depositing a metalaluminum film on the surface of diamond by adopting a film deposition technology; continuously depositing a silicon film on the surface of the prepared sample to obtain double-plating diamond; carrying out vacuum heat treatment on the prepared double-plating diamond; and (4) cooling to room temperature to obtain the silicon carbide coated diamond composite material of which the surface is uniformly coated with the silicon carbide coating. The silicon carbide film layer of the synthesized silicon carbide coated diamond composite material is uniform and continuous, the surface of diamond is coated by the silicon carbide layer through chemical bonding, interface bonding performance with a diamond substrate is good, and the composite material can be used for development of high-thermal-conductivity and wear-resistant diamond composite materials.

Description

Technical field [0001] The invention relates to a method for preparing a silicon carbide coated diamond composite material and a diamond / aluminum composite material, belonging to the field of material preparation. Background technique [0002] The continuous development of electronic information technology has promoted the development of electronic packaging in the direction of high performance, high integration, light weight and miniaturization. The increasing packaging density and operating frequency have caused the heat generated by electronic components to become higher and higher. Therefore, there is an urgent need to develop a new generation of electronic package heat dissipation materials to ensure effective heat dissipation of electronic components. Diamond has excellent thermal physical properties, and its thermal conductivity can be as high as 2000 W·m -1 ·K -1 , The coefficient of thermal expansion is as low as 0.8×10 -6 K -1 , And has a lower density of 3.52g·cm -3 ,...

AI Technical Summary

Problems solved by technology

In order to achieve this purpose, silicon carbide-coated diamonds for thermal functions are usually prepared by mixing diamond particles and silicon powder at high temperatures (>1200°C). This high-temperature heat treatment method not only has high requirements for equipment, but also The loss of energy is also large

In addition, diamond tends to undergo graphitization transformation, which reduces its intrinsic thermal conductivity and limits the realization of high thermal conductivity of diamond composites.

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