Method for Improving Diamond Seed Crystal Quality Using Hydrogen Plasma Multiple Etching/Annealing Cycle Process

A plasma and multiple etching technology, which is applied in the growth of polycrystalline materials, chemical instruments and methods, single crystal growth, etc., can solve the problems of complex operation, deterioration of seed crystal surface quality, and long time consumption, and achieve simplified operation, Reduced risk of epitaxially grown diamond quality degradation, time and cost savings
CN104975343BActive Publication Date: 2017-08-25九桓碳构(威海)新材料有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
九桓碳构(威海)新材料有限公司
Publication Date
2017-08-25

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Abstract

The invention discloses a method for improving the quality of diamond seed crystals by using hydrogen plasma multiple etching / annealing cycle technology, which relates to a method for improving the quality of diamond seed crystals. The present invention aims to solve the problems that the existing method for improving the quality of the diamond seed crystal takes a long time, the operation is relatively complicated, and the surface quality of the seed crystal is easily deteriorated. The method is as follows: 1. Diamond seed crystal cleaning; 2. Welding; 3. 1. Placing the seed crystal; 4. Hydrogen plasma etching / annealing, which is completed. The hydrogen plasma etching / annealing treatment of the present invention can simultaneously remove crystal defects, surface and subsurface damage, internal stress and defects of the diamond seed crystal caused by mechanical polishing on the surface of the diamond seed crystal in the same instrument, and improve the crystallinity, thereby obtaining High quality seeds and greatly simplifies operation, saving time and cost. The invention is applied in the technical field of crystal growth.
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Description

technical field

[0001] The invention relates to a method for improving the quality of diamond seed crystals. Background technique

[0002] In recent years, large-size single crystal diamond and quasi-single crystal diamond have been used in precision machining, high High-tech fields such as frequency communication, aerospace and cutting-edge technology have gradually become the basic, key and even the only material solutions. After decades of development, the high-temperature and high-pressure method (HPHT) has made great progress, but it still has technical problems such as poor seed crystal repeatability, limited size, and high density of impurities and defects.

[0003] In the preparation technology of CVD homoepitaxial growth single crystal diamond, microwave plasma chemical vapor deposition (MWCVD) has the advantages of electrodeless discharge, less impurity pollution in the system, high plasma density, continuous controllable microwave energy, and fast growth rate. ,...

Claims

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