Method for Improving Diamond Seed Crystal Quality Using Hydrogen Plasma Multiple Etching/Annealing Cycle Process

A plasma and multiple etching technology, which is applied in the growth of polycrystalline materials, chemical instruments and methods, single crystal growth, etc., can solve the problems of complex operation, deterioration of seed crystal surface quality, and long time consumption, and achieve simplified operation, Reduced risk of epitaxially grown diamond quality degradation, time and cost savings

Active Publication Date: 2017-08-25
九桓碳构(威海)新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problems that the existing method for improving the quality of diamond seed crystals takes a long time, the operation is relatively complicated, and it is easy to cause the surface quality of the seed crystal to deteriorate. Seed quality method

Method used

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  • Method for Improving Diamond Seed Crystal Quality Using Hydrogen Plasma Multiple Etching/Annealing Cycle Process
  • Method for Improving Diamond Seed Crystal Quality Using Hydrogen Plasma Multiple Etching/Annealing Cycle Process
  • Method for Improving Diamond Seed Crystal Quality Using Hydrogen Plasma Multiple Etching/Annealing Cycle Process

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specific Embodiment approach 1

[0026] Specific implementation mode one: the method for improving the quality of diamond seed crystals by using hydrogen plasma multiple etching / annealing cycle process in this embodiment comprises the following steps:

[0027] 1. Diamond seed crystal cleaning: Put the diamond seed crystal and the metal molybdenum substrate disc into acetone, deionized water, and absolute ethanol in sequence for ultrasonic cleaning. Each cleaning takes 15-30 minutes, and the ultrasonic power is 100-300W. Obtain the cleaned seed crystal and molybdenum alloy substrate;

[0028] 2. Welding: weld the cleaned seed crystal to the cleaned molybdenum substrate wafer with gold foil;

[0029] 3. Place the seed crystal: place the welded seed crystal on the heat insulation wire to keep the surface of the seed crystal level;

[0030] 4. Hydrogen plasma etching / annealing:

[0031] (1) Put the seed crystal treated in step 3 into the cabin, and after closing the cabin, vacuumize the cabin body so that the v...

specific Embodiment approach 2

[0042]Specific embodiment two: the difference between this embodiment and specific embodiment one is: the ultrasonic power described in step one is 200W. Other steps and parameters are the same as those in the first embodiment.

specific Embodiment approach 3

[0043] Specific embodiment 3: The difference between this embodiment and specific embodiment 1 or 2 is that the cleaning time in step 1 is 20 minutes each time. Other steps and parameters are the same as those in Embodiment 1 or 2.

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Abstract

The invention discloses a method for improving the quality of diamond seed crystals by using hydrogen plasma multiple etching / annealing cycle technology, which relates to a method for improving the quality of diamond seed crystals. The present invention aims to solve the problems that the existing method for improving the quality of the diamond seed crystal takes a long time, the operation is relatively complicated, and the surface quality of the seed crystal is easily deteriorated. The method is as follows: 1. Diamond seed crystal cleaning; 2. Welding; 3. 1. Placing the seed crystal; 4. Hydrogen plasma etching / annealing, which is completed. The hydrogen plasma etching / annealing treatment of the present invention can simultaneously remove crystal defects, surface and subsurface damage, internal stress and defects of the diamond seed crystal caused by mechanical polishing on the surface of the diamond seed crystal in the same instrument, and improve the crystallinity, thereby obtaining High quality seeds and greatly simplifies operation, saving time and cost. The invention is applied in the technical field of crystal growth.

Description

technical field [0001] The invention relates to a method for improving the quality of diamond seed crystals. Background technique [0002] In recent years, large-size single crystal diamond and quasi-single crystal diamond have been used in precision machining, high High-tech fields such as frequency communication, aerospace and cutting-edge technology have gradually become the basic, key and even the only material solutions. After decades of development, the high-temperature and high-pressure method (HPHT) has made great progress, but it still has technical problems such as poor seed crystal repeatability, limited size, and high density of impurities and defects. [0003] In the preparation technology of CVD homoepitaxial growth single crystal diamond, microwave plasma chemical vapor deposition (MWCVD) has the advantages of electrodeless discharge, less impurity pollution in the system, high plasma density, continuous controllable microwave energy, and fast growth rate. ,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/18C30B29/04
Inventor 朱嘉琦陈亚男代兵舒国阳王强赵继文刘康
Owner 九桓碳构(威海)新材料有限公司
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