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Femtosecond mode-locked laser based on disordered laser crystal and laser generation method

A technology of mode-locked lasers and laser crystals, which is applied to lasers, laser components, phonon exciters, etc., can solve the problems of limited output power, low output power, and bulky volume of titanium sapphire lasers, and reduce volume and cost , high output power, good beam quality

Pending Publication Date: 2020-10-02
JINAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the generation of ultra-short pulse width femtosecond mode-locked laser requires the pump source to have better beam quality, Ti:Sapphire laser is usually used as the pump source. However, Ti:Sapphire laser has the disadvantages of bulky size and high price; Due to the output power of Ti:Sapphire lasers, the output power of 2 micron femtosecond mode-locked lasers based on disordered laser crystals is still at a relatively low level (<400mW)

Method used

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  • Femtosecond mode-locked laser based on disordered laser crystal and laser generation method
  • Femtosecond mode-locked laser based on disordered laser crystal and laser generation method

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Embodiment 1

[0029] figure 1 It is a schematic diagram of the optical path structure of a 2 micron femtosecond mode-locked laser based on a disordered laser crystal of embodiment 1, including a 794nm distributed Bragg reflection cone semiconductor laser 1, a collimating mirror 2, a focusing mirror 3, a concave input mirror 4, and a gain The medium 5, the first concave high-reflective mirror 6, the second concave high-reflective mirror 7, the mode locking element 8, the first planar chirped mirror 9, the second planar chirped mirror 10, and the coupling output mirror 11. The gain medium 5 is a disordered laser crystal (Tm: GYAP).

[0030] The pump light emitted by the 794nm distributed Bragg reflection cone semiconductor laser 1 passes through the collimator lens 2, the focusing mirror 3 and the concave input mirror 4 and then is focused into the gain medium 5 placed at Brewster's angle, causing population inversion And a laser oscillation is formed in the resonant cavity. The laser in the re...

Embodiment 2

[0032] figure 2 It is a schematic diagram of the optical path structure of another 2 micron femtosecond mode-locked laser based on a disordered laser crystal of the embodiment 2. This embodiment is further improved on the basis of the embodiment 1. The difference from the embodiment 1 is : A Loyt-type birefringent tuning filter 12 is inserted in the laser cavity to achieve the tuning output of a 2 micron femtosecond mode-locked laser.

[0033] In summary, the present invention uses a disordered laser crystal with a larger stimulated absorption cross-section, a stimulated emission cross-section, and a wider fluorescence spectrum as the gain medium, and a distributed Bragg reflection cone semiconductor laser with high power and high beam quality as the pump source , Can achieve high power, high beam quality, ultra-short pulse width 2 micron femtosecond mode-locked laser output.

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Abstract

The invention discloses a femtosecond mode-locked laser device based on a disordered laser crystal, and a laser generation method. The laser device comprises a pumping source, a collimating mirror, afocusing mirror, a concave input mirror, a gain medium, a first concave high-reflectivity mirror, a second concave high-reflectivity mirror, a mode locking element, a first planar chirped mirror, a second planar chirped mirror and a coupling output mirror, wherein pump light output by the pumping source sequentially passes through the collimating mirror, the focusing mirror and the concave input mirror and then is injected into the gain medium, and the concave input mirror, the first concave high-reflectivity mirror, the second concave high-reflectivity mirror, the mode locking element, the first plane chirped mirror, the second plane chirped mirror and the plane output mirror form a laser resonant cavity. According to the invention, a disordered laser crystal with a large stimulated absorption cross section, a stimulated emission cross section and a wide fluorescence spectrum is adopted as a gain medium, so that high-power, high-beam-quality and ultra-short-pulse-width 2-micron femtosecond mode-locked laser output can be achieved.

Description

Technical field [0001] The invention relates to the technical field of mid-infrared solid-state lasers, in particular to a femtosecond mode-locked laser based on disordered laser crystals and a laser generation method. Background technique [0002] Thanks to the rapid development of laser crystal materials and mode-locking technology, the femtosecond mode-locking laser technology in the near-infrared band has been very mature, and related commercial products are constantly available. With the continuous development of laser physics, it has been discovered that many interactions between light and matter are closely related to the laser wavelength. Therefore, it is urgent to broaden the wavelength coverage of femtosecond mode-locked lasers. In particular, the 2 micron femtosecond mode-locked laser has unique advantages in the fields of time-resolved molecular spectroscopy, optical frequency comb generation, optical parametric chirped pulse amplification, and semiconductor material ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/0941H01S3/16
CPCH01S3/0941H01S3/163H01S3/1638H01S3/1616
Inventor 代世波朱思祁张沛雄尹浩李真陈振强
Owner JINAN UNIVERSITY