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Metallographic corrosive liquid and metallographic display method of copper-gallium alloy

A copper-gallium alloy and display method technology, which is applied in the field of copper-gallium alloy metallographic corrosion solution, can solve the problems of high cost and difficulty in controlling the degree of corrosion

Active Publication Date: 2020-10-23
NINGBO INST OF TECH BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] So far, the prior art does not relate to the corrosion method of this alloy. The copper and copper alloys in the prior art have good corrosion resistance in various atmospheres. When exposed to the air, the surface will contact with the oxygen in the air. reaction, a layer of dense oxide film is quickly formed to protect the substrate, so it takes a long time to corrode with corrosive liquid, generally more than 5 minutes. In order to improve the efficiency of metallographic preparation, electrolytic method is used for corrosion. The Chinese invention patent with the publication number CN109211648A "A Method for Preparation of Aluminum Oxide Dispersion Strengthened Copper Alloy Metallographic Samples", the electrolysis time is 60-120s, but the electrolysis process will be affected by factors such as current, voltage, temperature and time , not only the cost is high and the degree of corrosion is difficult to grasp, but the present invention provides a metallographic corrosion solution for copper-gallium alloys with low cost, shortened corrosion time, easy control of corrosion degree, and ability to clearly display grain boundaries and structures, and provides a Corresponding Simple and Effective Copper-Gallium Alloy Metallographic Display Method

Method used

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Experimental program
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Effect test

Embodiment 1

[0051] The mass fraction ratio of the copper-gallium alloy in this embodiment is Ga: Cu (Wt%)=20:80

[0052] (a) Cut the copper-gallium alloy into a square sample with a size of 12mm*12mm*25mm; this size is more convenient to hold and thus easy to operate;

[0053] (b) The first stage of grinding: choose 300-mesh sandpaper and install it on the grinding machine, use water as the wetting agent for grinding, select the 12mm*12mm surface as the grinding surface, the speed of the grinding machine is 150r / min, and the grinding time is 15 minutes; The cutting marks on the grinding surface can be polished off;

[0054] (c) The second stage of grinding: wash the sample with clean water, replace the sandpaper on the grinding machine with 600 mesh, and the grinding direction of the sample is 90° to the scratches of the first stage of grinding Angle, the speed of the grinder is 150r / min, continue to grind the grinding surface, and the grinding time is 15 minutes;

[0055] (d) The third...

Embodiment 2

[0062] The mass fraction ratio of the copper-gallium alloy of this embodiment is Ga: Cu (Wt%)=45:55

[0063] (a) Cut the copper-gallium alloy into a square sample with a size of 5mm*5mm*15mm; this size is more convenient to hold and thus easy to operate;

[0064] (b) The first stage of grinding: select 60-mesh sandpaper and install it on the grinding machine, use water as the wetting agent for grinding, select the 5mm*5mm surface as the grinding surface, the speed of the grinding machine is 100r / min, and the grinding time is 5 minutes; The cutting marks on the grinding surface can be polished off;

[0065] (c) The second stage of grinding: wash the sample with clean water, replace the sandpaper on the grinding machine with 500 mesh, and the grinding direction of the sample is 60° from the scratches of the first stage of grinding Angle, the speed of the grinder is 100r / min, continue to grind the grinding surface, and the grinding time is 5 minutes;

[0066] (d) The third stag...

Embodiment 3

[0073] The mass fraction ratio of the copper-gallium alloy in this embodiment is Ga:Cu(Wt%)=10:90

[0074] (a) Cut the copper-gallium alloy into a square sample with a size of 20mm*20mm*45mm; this size is more convenient to hold and thus easy to operate;

[0075] (b) The first stage of grinding: choose 400-mesh sandpaper and install it on the grinding machine, use water as the wetting agent for grinding, select the 20mm*20mm surface as the grinding surface, the speed of the grinding machine is 200r / min, and the grinding time is 20 minutes; The cutting marks on the grinding surface can be polished off;

[0076] (c) The second stage of grinding: wash the sample with clean water, replace the sandpaper on the grinding machine with 900 mesh, and the grinding direction of the sample is 120° from the scratches of the first stage of grinding Angle, the speed of the grinder is 200r / min, continue to grind the grinding surface, and the grinding time is 20 minutes;

[0077] (d) The thir...

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Abstract

The invention relates to a metallographic corrosive liquid and a metallographic display method of a copper-gallium alloy. The metallographic corrosive liquid comprises, by weight, 10% to 30% of nitricacid, 8% to 12% of sulfuric acid, 4% to 14% of ammonium chloride, 7% to 17% of chromium chloride, and the balance water. The metallographic display method comprises the following steps of sample cutting, a first stage of polishing, a second stage of polishing, a third of polishing, polishing, cleaning and drying, corrosion and rinsing. With the metallographic corrosive liquid and the metallographic display method of the copper-gallium alloy, the corrosion time can be shortened, the corrosion degree can be controlled conveniently, and the grain boundary and the crystal structure can be displayed clearly.

Description

technical field [0001] The invention relates to the field of metallographic preparation, in particular to a metallographic corrosion solution of a copper-gallium alloy and a metallographic display method. Background technique [0002] Academia and industry generally believe that the development of solar cells has entered the third generation. The first generation is monocrystalline silicon solar cells, and the second generation is polycrystalline silicon, amorphous silicon and other solar cells. Copper indium gallium selenium thin film solar cells have the remarkable characteristics of low production cost, less pollution, no fading, and good weak light performance. Photoelectric conversion The efficiency ranks first among all kinds of thin-film solar cells, close to that of crystalline silicon solar cells, and the cost is only one-third of it. It is called a very promising new thin-film solar cell for the next generation, and it is a research and development hotspot in recen...

Claims

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Application Information

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IPC IPC(8): C23F1/18G01N1/32
CPCC23F1/18G01N1/32Y02P70/50
Inventor 张虎高明杨本润
Owner NINGBO INST OF TECH BEIHANG UNIV
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