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High-efficiency ultraviolet light-emitting diode based on gallium oxide substrate and preparation method thereof

A technology of light emitting diode and gallium oxide, which is applied in the field of microelectronics, can solve the problems of low hole carrier concentration, low Mg ionization rate, large lattice mismatch, etc., and achieves improved luminous efficiency, simple process, and reduced effect of stress

Active Publication Date: 2022-07-12
西安电子科技大学芜湖研究院
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, due to the large lattice mismatch between sapphire and GaN, and the low ionization rate of Mg in p-type GaN, resulting in low hole carrier concentration, it is difficult to complete the efficient recombination process in the quantum well, resulting in LED low luminous efficiency

Method used

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  • High-efficiency ultraviolet light-emitting diode based on gallium oxide substrate and preparation method thereof
  • High-efficiency ultraviolet light-emitting diode based on gallium oxide substrate and preparation method thereof
  • High-efficiency ultraviolet light-emitting diode based on gallium oxide substrate and preparation method thereof

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Embodiment 1

[0043] See figure 1 , figure 1It is a schematic structural diagram of a high-efficiency ultraviolet light emitting diode based on a gallium oxide substrate provided by an embodiment of the present invention. As shown in the figure, the high-efficiency ultraviolet light emitting diode based on gallium oxide substrate in this embodiment includes a substrate layer 1, an AlN nucleation layer 2, an n-type GaN layer 3, a quantum well layer 4, a p-type BN layer 5, a first electrode 6 and second electrode 7 . Among them, the substrate layer 1, the AlN nucleation layer 2, the n-type GaN layer 3, the quantum well layer 4 and the p-type BN layer 5 are sequentially stacked from bottom to top; the first electrode 6 is arranged on the upper surface of the n-type GaN layer 3 ; The second electrode 7 is arranged on the upper surface of the p-type BN layer 5 .

[0044] In this embodiment, the substrate layer 1 is Ga 2 O 3 Material.

[0045] In the high-efficiency ultraviolet light emitti...

Embodiment 2

[0053] This embodiment provides a method for fabricating a high-efficiency ultraviolet light-emitting diode based on a gallium oxide substrate, please refer to figure 2 , figure 2 This is a flow chart of a method for preparing a high-efficiency ultraviolet light emitting diode based on a gallium oxide substrate provided by an embodiment of the present invention. As shown in the figure, the preparation method of this embodiment includes:

[0054] S1: for Ga 2 O 3 The substrate layer is subjected to heat treatment and nitridation treatment;

[0055] Specifically, S1 includes:

[0056] S11: The Ga 2 O 3 After the substrate is cleaned, it is placed in the MOCVD reaction chamber of metal organic chemical vapor deposition, and the vacuum degree of the reaction chamber is reduced to 2×10 -2 Torr, feed hydrogen into the reaction chamber, and keep it for 5-10min under the condition that the pressure of the MOCVD reaction chamber reaches 20-760 Torr and the reaction temperature...

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Abstract

The invention relates to a high-efficiency ultraviolet light emitting diode based on a gallium oxide substrate and a preparation method, wherein the light emitting diode comprises: a substrate layer, an AlN nucleation layer, an n-type GaN layer, a quantum well layer and p-type BN layer; the first electrode is arranged on the upper surface of the n-type GaN layer; the second electrode is arranged on the upper surface of the p-type BN layer; wherein, the substrate layer is Ga 2 O 3 Materials, the AlN nucleation layer was prepared by a magnetron sputtering process. The high-efficiency ultraviolet light-emitting diode based on gallium oxide substrate of the present invention is selected from Ga 2 O 3 As the substrate layer, Ga 2 O 3 The lattice mismatch with GaN is small, which reduces the stress on the material and improves the luminous efficiency of the device. In addition, p-type BN is used to provide holes. Since Mg has a high ionization rate in BN, the electrical conductivity is also high. , thereby further improving the luminous efficiency of the device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a high-efficiency ultraviolet light emitting diode based on a gallium oxide substrate and a preparation method thereof. Background technique [0002] GaN is widely used in ultraviolet light-emitting devices and photodetection devices due to its large band gap. As a third-generation lighting device, GaN-based LEDs are far superior to traditional lighting sources in terms of luminous efficiency and service life, and can be widely used in biological, medical, chemical and optical communication fields. [0003] The magnitude of the stress in the GaN film will directly affect the crystalline quality of the GaN film, thereby affecting the efficiency of the light-emitting diode. Therefore, reducing the stress has always been an important goal in the design and manufacture of light-emitting diodes. In the currently widely used GaN light-emitting diodes, sapphire sub...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/12H01L33/06H01L33/00
CPCH01L33/02H01L33/12H01L33/06H01L33/007Y02P70/50
Inventor 许晟瑞胡琳琳王学炜张雅超段小玲陈大正宁静张进成郝跃
Owner 西安电子科技大学芜湖研究院