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Method for enhancing photoetching resolution of dense patterns

A lithography resolution and graphics technology, which is applied in microlithography exposure equipment, photoplate making process of pattern surface, optics, etc., can solve the problems of huge capital cost and uneconomical lithography machine, and achieve the goal of improving resolution Effect

Pending Publication Date: 2020-10-30
儒芯微电子材料(上海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for specific wavelength lithography equipment, it is difficult to break through the resolution limit caused by the diffraction limit through the above methods
[0007] For most chip manufacturing companies, the capital cost required to purchase more advanced lithography machines to meet the resolution requirements is often huge
Especially for 4-inch or 6-inch fabs, it is very uneconomical to use advanced lithography machines (such as ArF lithography machines)

Method used

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  • Method for enhancing photoetching resolution of dense patterns
  • Method for enhancing photoetching resolution of dense patterns
  • Method for enhancing photoetching resolution of dense patterns

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The method for enhancing the resolution of dense pattern lithography in this embodiment adopts two exposure processes, and the specific process includes:

[0035] Uniformly coat a layer of developable glue 101 on the substrate 100 and bake it, such as figure 1 shown.

[0036] The substrate 100 may be monocrystalline silicon, polycrystalline silicon, silicon dioxide, silicon nitride, gallium nitride, gallium arsenide, aluminum oxide, silicon carbide, indium phosphide or other metal or metal alloy substrates.

[0037] Developable rubber 101 is different from photoresist, it has a certain solubility in alkaline developer without exposure, and its dissolution rate can be changed by baking temperature and time. Generally, the dissolution rate in alkaline developer is between 0.1~200nm / s. The developable adhesive 101 is also resistant to dissolution by photoresist solvents. The material of the developable adhesive meeting the above conditions may be a metal lift-off adhes...

Embodiment 2

[0058] The method for enhancing the resolution of dense pattern lithography in this embodiment adopts two exposure processes, and the specific process includes:

[0059] Uniformly coat a layer of developable glue 101 on the substrate 100 and bake it, such as figure 1 shown.

[0060] The substrate 100 may be monocrystalline silicon, polycrystalline silicon, silicon dioxide, silicon nitride, gallium nitride, gallium arsenide, aluminum oxide, silicon carbide, indium phosphide or other metal or metal alloy substrates.

[0061] Developable rubber 101 is different from photoresist, it has a certain solubility in alkaline developer without exposure, and its dissolution rate can be changed by baking temperature and time. Generally, the dissolution rate in alkaline developer is between 0.1~200nm / s. The developable adhesive 101 can also resist dissolution of organic developer and photoresist solvent. The material of the developable adhesive meeting the above conditions may be a meta...

Embodiment 3

[0087] The method for enhancing the resolution of dense pattern lithography in this embodiment adopts two exposure processes, and the specific process includes:

[0088] Uniformly coat a layer of developable glue 101 on the substrate 100 and bake it, such as figure 1 shown.

[0089] Uniformly coat a layer of photoresist 102 on the developable glue 101 and bake it, such as figure 2 shown.

[0090] Through the first photolithography exposure process, based on the mask plate used in this step process, an exposed area 102a and a non-exposed area 102b are formed on the photoresist 102, as image 3 shown.

[0091] Perform post-exposure developing process, use alkaline developing solution to remove the exposed area 102a, meanwhile alkaline developing solution can also dissolve the developable adhesive 101 under the photoresist 102, after a predetermined time, the Figure 4 In the structure shown, the exposed area 102a of the photoresist 102 is dissolved and removed by the alkal...

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Abstract

The invention provides a method for enhancing photoetching the resolution of dense patterns. The method comprises the following steps of executing an adhesive patterning process so as to form a firstmask pattern; executing an adhesive layer treatment process; and executing the adhesive patterning process again so that a second mask pattern is formed, wherein the patterns in the second mask pattern and the patterns in the first mask pattern are arranged at intervals; the adhesive patterning process comprises the following steps: sequentially forming a first adhesive layer and a second adhesivelayer on a substrate; forming an exposure region and a non-exposure region on the first adhesive layer through a photoetching exposure process; removing partial regions of the exposure region and thesecond adhesive layer by adopting a first solvent, or removing the exposure region by adopting a second solvent, and then removing partial regions of the second adhesive layer by adopting a third solvent so that a first pattern is formed on the first adhesive layer, a second pattern is formed on the second adhesive layer, and the second pattern is a pattern indented on the basis of the first pattern; and removing the non-exposure region by adopting a fourth solvent, wherein the adhesive layer treatment process is used for enabling the first adhesive layer to resist the dissolution of the first solvent or the third solvent.

Description

technical field [0001] The invention relates to the technical field of microelectronic photolithography technology, in particular to a method for enhancing the resolution of dense pattern photolithography. Background technique [0002] In the integrated circuit manufacturing process, the photolithography process is to accurately copy the pattern on the photolithography mask to the substrate (single crystal silicon, polycrystalline silicon, silicon dioxide, gallium nitride, gallium arsenide, aluminum oxide, silicon carbide, phosphide Indium or metal substrate, etc.) on the photoresist on the surface. Then, under the protection of the photoresist, through processes such as etching, ion implantation or thin film deposition, the functions of selective patterning, ion doping or growth of thin films on the substrate surface are realized. [0003] For a long time, photolithography technology in the semiconductor industry has been pursuing higher resolution so as to achieve smaller...

Claims

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70425
Inventor 许箭秦龙耿文练花雷
Owner 儒芯微电子材料(上海)有限公司
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